公开(公告)号：US20240234346A1

公开(公告)日：2024-07-11

申请号：US18095156

申请日：2023-01-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark D. LEVY ,  Brett T. CUCCI ,  Spencer H. PORTER ,  Santosh SHARMA

IPC: H01L23/58 ,  H01L23/31 ,  H01L23/532 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/585 ,  H01L23/3178 ,  H01L23/53295 ,  H01L29/0657 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/291

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures and methods of manufacture. The structure includes: a semiconductor substrate; a channel layer above the semiconductor substrate; a trench within the channel layer, extending to the semiconductor substrate; and a moisture barrier layer lining sidewalls and a bottom surface of the trench.

公开(公告)号：US20220238646A1

公开(公告)日：2022-07-28

申请号：US17157269

申请日：2021-01-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Johnatan A. KANTAROVSKY ,  Vibhor JAIN

IPC: H01L29/06 ,  H01L29/08 ,  H01L27/07 ,  H01L27/06 ,  H01L21/308 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgap structures in a doped region under one or more transistors and methods of manufacture. The structure includes: a semiconductor material comprising a doped region; one or more sealed airgap structures breaking up the doped region of the semiconductor material; and a field effect transistor over the one or more sealed airgap structures and the semiconductor material.

公开(公告)号：US20210376180A1

公开(公告)日：2021-12-02

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Mark D. LEVY ,  Vibhor JAIN ,  Andre STURM

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/0312 ,  H01L31/028 ,  H01L31/036

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

公开(公告)号：US20250040221A1

公开(公告)日：2025-01-30

申请号：US18226982

申请日：2023-07-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan A. KANTAROVSKY ,  Mark D. LEVY ,  Alvin J. JOSEPH ,  Santosh SHARMA ,  Michael J. ZIERAK

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; a first field plate on a first side of the gate structure; and a second field plate on a second side of the gate structure, independent from the first field plate.

公开(公告)号：US20240162116A1

公开(公告)日：2024-05-16

申请号：US17988335

申请日：2022-11-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Mark D. LEVY ,  Steven M. SHANK

IPC: H01L23/473 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/473 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to structures with buried fluidic channels and methods of manufacture. The structure includes: a semiconductor substrate; a device layer with a gradient profile on the semiconductor substrate; a fluidic channel within the device layer comprising the gradient profile; at least one inlet channel in fluid communication with the fluidic channel; and at least one outlet channel in fluid communication with the fluidic channel.

公开(公告)号：US20240006524A1

公开(公告)日：2024-01-04

申请号：US17852873

申请日：2022-06-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Qizhi LIU ,  Jeonghyun HWANG

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a patterned buried porous layer of semiconductor material and a device over the patterned buried porous layer, and methods of manufacture. The structure includes: a semiconductor substrate includes a patterned buried porous layer within the semiconductor substrate; a semiconductor compound material over the semiconductor substrate and the patterned buried porous layer; and at least one device on the semiconductor compound material. The non-patterned portions of the semiconductor substrate provide a thermal pathway within the semiconductor substrate.

公开(公告)号：US20230187449A1

公开(公告)日：2023-06-15

申请号：US18104504

申请日：2023-02-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/66 ,  H01L21/8234

CPC classification number: H01L27/1207 ,  H01L21/76283 ,  H01L23/66 ,  H01L21/823481 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20210320217A1

公开(公告)日：2021-10-14

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Vibhor JAIN ,  Ramsey HAZBUN ,  Pernell DONGMO ,  Cameron E. LUCE ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L31/107 ,  H01L31/0376 ,  H01L31/028 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.