公开(公告)号：US20160240471A1

公开(公告)日：2016-08-18

申请号：US15027012

申请日：2015-04-15

Applicant: GaN Systems Inc.

Inventor： Greg P. KLOWAK ,  Ahmad MIZAN ,  John ROBERTS

IPC: H01L23/498 ,  H01L23/522 ,  H01L29/20 ,  H01L23/532 ,  H01L29/78 ,  H01L23/482

CPC classification number: H01L23/49844 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/5226 ,  H01L23/53228 ,  H01L24/19 ,  H01L24/20 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/78 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/2518 ,  H01L2224/82

Abstract: Embedded packaging for devices and systems comprising lateral GaN power transistors is disclosed. The packaging assembly is suitable for large area, high power GaN transistors and comprises an assembly of a GaN power transistor and package components comprising a three level interconnect structure. In preferred embodiments, the three level interconnect structure comprises an on-chip metal layer, a copper redistribution layer and package metal layers, in which there is a graduated or tapered contact area sizing through the three levels for dividing/applying current on-chip and combining/collecting current off-chip, with distributed contacts over the active area of the GaN power device. This embedded packaging assembly provides a low inductance, low resistance interconnect structure suitable for devices and systems comprising large area, high power GaN transistors for high voltage/high current applications.

Abstract translation: 公开了包括横向GaN功率晶体管的器件和系统的嵌入式封装。 包装组件适用于大面积高功率GaN晶体管，并且包括GaN功率晶体管和包括三级互连结构的封装组件的组件。 在优选实施例中，三电平互连结构包括片上金属层，铜再分布层和封装金属层，其中存在通过三个级别分级/施加电流片上的刻度或锥形接触面积， 在GaN功率器件的有源区域上结合/收集芯片外的电流与分布式触点。 该嵌入式封装组件提供适合于用于高电压/高电流应用的大面积高功率GaN晶体管的器件和系统的低电感，低电阻互连结构。

公开(公告)号：US20150318851A1

公开(公告)日：2015-11-05

申请号：US14654127

申请日：2013-12-12

Applicant: GAN SYSTEMS INC.

Inventor： John ROBERTS ,  Greg P. KLOWAK

IPC: H03K17/687

CPC classification number: H03K17/687 ,  H01F19/08 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/645 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/06051 ,  H01L2224/06131 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12035 ,  H01L2924/1204 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An electronic switching system and device comprising driver circuits for power transistors are disclosed, with particular application for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement, to a high voltage GaN HEMT and provides for improved control of noise and voltage transients. Monitoring and control functions, including latching and clamping, are based on monitoring of Vcc conditions for shut-down and start-up conditioning to enable safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses.

Abstract translation: 公开了一种包括用于功率晶体管的驱动电路的电子开关系统和装置，其特别适用于MOSFET驱动的常规氮化镓（GaN）功率晶体管。 优选地，具有集成的低电压横向MOSFET驱动器的低功率，高速CMOS驱动器电路以混合共源共栅布置串联耦合到高电压GaN HEMT，并且提供对噪声和电压瞬变的改进的控制。 监控和控制功能，包括闭锁和钳位，都是基于对关闭和启动调节的Vcc条件进行监控，以实现更安全的操作，特别是对于高电压和高电流开关。 优选实施例还提供具有减小的输入损耗的隔离，自供电的高速驱动器件。