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公开(公告)号：US20140254978A1
公开(公告)日：2014-09-11
申请号：US13789440
申请日：2013-03-07
申请人： Brian Koch , Erik Norberg , Alexander W. Fang , Jae Shin , Gregory Alan Fish
发明人： Brian Koch , Erik Norberg , Alexander W. Fang , Jae Shin , Gregory Alan Fish
IPC分类号： H01L21/822 , G02B6/13
CPC分类号： G02B6/13 , G02B6/12 , G02B6/12004 , G02F1/0018 , G02F2001/212 , H01L21/822
摘要： Embodiments of the invention describe photonic integrated circuits (PICs) formed using simultaneous fabrication operations performed on photonic device layers. Each device of a PIC may be made from different optimized materials by growing the materials separately, cutting pieces of the different materials and bonding these pieces to a shared wafer. Embodiments of the invention bond photonic device layers so that shared (i.e., common) processing operations may be utilized to make more than one device simultaneously. Embodiments of the invention allow for simpler, more cost effective fabrication of PICs and improve photonic device performance and reliability.
摘要翻译： 本发明的实施例描述了使用在光子器件层上执行的同时制造操作形成的光子集成电路（PIC）。 PIC的每个装置可以通过分别生长材料而不同的优化材料制成，切割不同材料的片并将这些片粘合到共享的晶片上。 本发明的实施例将光子器件层结合起来，使得可以利用共享的（即共同的）处理操作来同时制造多个器件。 本发明的实施例允许PIC的更简单，更经济有效的制造并且提高光子器件的性能和可靠性。
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公开(公告)号：US08774582B1
公开(公告)日：2014-07-08
申请号：US13461634
申请日：2012-05-01
CPC分类号： H01S5/22 , G02F1/025 , G02F2201/07 , G02F2202/102 , G02F2202/105 , H01L21/187 , H01S5/3213 , H01S5/3214
摘要： “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.
摘要翻译： “混合光子器件”描述了其中光学部分即光学模式包括硅和III-V半导体区域的器件，因此半导体材料的折射率和结合层区域的折射率直接影响 光学功能的设备。 现有技术的装置利用与III-V衬底相同材料的光学柔顺层; 然而，在接合过程的最后一个子过程中，基底必须被酸去除。 这些酸可以蚀刻到结合层中，导致缺陷在接合材料的界面处传播，不利地影响器件的光学模式形状和传播损耗。 本发明的实施例利用不受接合工艺的最后阶段（例如，衬底移除）的影响的半导体蚀刻选择性接合层，并且因此保护接合界面层免受影响。
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公开(公告)号：US08981383B1
公开(公告)日：2015-03-17
申请号：US13412449
申请日：2012-03-05
申请人： Gregory Alan Fish , Anand Ramaswamy
发明人： Gregory Alan Fish , Anand Ramaswamy
IPC分类号： G02B6/10
CPC分类号： H01L31/024 , G01J1/0209 , G01J1/0252 , H01L23/373 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention describe substrates, used to form optical devices, which include high thermal conductivity intermediate layers. Said substrates comprise a bulk layer, an optical device layer comprising a first material, and an intermediate layer disposed between the bulk layer and the device layer comprising a second material having a higher thermal conductivity and a lower index of refraction than the first material.In the resulting devices, said intermediate layer functions as part of the device layer structure—i.e., provides optical or electrical power dissipation (i.e. thermal) functionality for the device formed from said substrate. Thus, optical devices do not necessarily need to utilize an add-on packaging solution for heat absorption when formed from substrate stacks according to embodiments of the invention. Moreover, in some embodiments, said intermediate layer is located at “zero-distance” from the source of the heat generation, thereby efficiently transferring heat out of that region.
摘要翻译： 本发明的实施例描述了用于形成光学器件的衬底，其包括高导热性中间层。 所述衬底包括体层，包括第一材料的光学器件层和设置在本体层和器件层之间的中间层，其包括具有比第一材料更高的导热性和较低折射率的第二材料。 在所得到的器件中，所述中间层用作器件层结构的一部分，即为由所述衬底形成的器件提供光或电功率耗散（即热）功能。 因此，根据本发明的实施例，光学器件不一定需要利用由衬底叠层形成的附加包装解决方案用于吸热。 此外，在一些实施例中，所述中间层位于距离发热源的“零距离”处，从而有效地将热量传出该区域。
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公开(公告)号：US09846285B2
公开(公告)日：2017-12-19
申请号：US13444635
申请日：2012-04-11
申请人： Gregory Alan Fish , Jae Shin
发明人： Gregory Alan Fish , Jae Shin
CPC分类号： G02B6/4203 , G02B6/1228 , G02B6/305 , G02B2006/12061 , G02B2006/12078
摘要： Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.
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公开(公告)号：US09804475B1
公开(公告)日：2017-10-31
申请号：US15130156
申请日：2016-04-15
申请人： John Parker , Gregory Alan Fish , Brian R. Koch
发明人： John Parker , Gregory Alan Fish , Brian R. Koch
IPC分类号： G02F1/035 , G02F1/225 , H01L27/146 , H01L31/18
CPC分类号： G02F1/2255 , G02F1/2257 , H01L27/14625 , H01L31/184
摘要： In photonic integrated circuits implemented in silicon-on-insulator substrates, non-conductive channels formed, in accordance with various embodiments, in the silicon device layer and/or the silicon handle of the substrate in regions underneath radio-frequency transmission lines of photonic devices can provide breaks in parasitic conductive layers of the substrate, thereby reducing radio-frequency substrate losses.
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公开(公告)号：US09692207B2
公开(公告)日：2017-06-27
申请号：US13249753
申请日：2011-09-30
IPC分类号： H01S3/10 , H01S5/00 , H01S3/083 , H01S5/14 , H01S5/02 , H01S5/10 , H01S3/13 , H01S5/024 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.
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公开(公告)号：US20160099546A1
公开(公告)日：2016-04-07
申请号：US14870225
申请日：2015-09-30
CPC分类号： H01S5/0612 , G02B6/12009 , G02B6/29344 , G02B6/2938 , H01S5/026 , H01S5/0261 , H01S5/06821 , H01S5/14
摘要： Described herein are lasers comprising an output port to output an optical signal, a plurality of waveguide segments forming an optical cavity length, and a resonant optical cavity comprising the optical cavity length, a gain medium included in the resonant optical cavity to amplify the optical signal, and a heating element disposed near at least two of the plurality of waveguide segments, the heating element controllable to adjust the phase of the optical signal by heating the waveguide segments. Described herein are optical devices comprising a first plurality of ports to output a plurality of optical signals, a second plurality of ports to receive the plurality of optical signals, and a plurality of coupling waveguides. The plurality of waveguide may comprise a pair of adjacent waveguides separated by a first distance, each of the pair of adjacent waveguides comprising a different width.
摘要翻译： 这里描述的是包括用于输出光信号的输出端口，形成光腔长度的多个波导段和包括光腔长度的谐振光腔的激光器，包括在谐振光腔中的增益介质，以放大光信号 以及设置在所述多个波导段中的至少两个附近的加热元件，所述加热元件可控制以通过加热所述波导段来调节所述光信号的相位。 这里描述的是包括用于输出多个光信号的第一多个端口，用于接收多个光信号的第二多个端口以及多个耦合波导的光学装置。 多个波导可以包括由第一距离分开的一对相邻波导，该对相邻波导中的每一个包括不同的宽度。
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公开(公告)号：US20130083815A1
公开(公告)日：2013-04-04
申请号：US13249753
申请日：2011-09-30
IPC分类号： H01S3/10
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.
摘要翻译： 在现有技术中，使用基于硅的可调谐环形滤波器和基于III-V半导体的增益区域的可调谐激光器需要独立形成的基于硅和III-V半导体的光学元件的异质集成，导致需要复杂制造工艺的大型光学器件 （例如，密封包装以联接形成在不同基底上的装置，元件的精确对准等）。 本发明的实施例通过使用杂化的III-V /硅增益区域和诸如硅波长滤波器和硅波长参考的硅光学组件来消除对体光学元件和气密封装的需要，从而减小了尺寸和制造复杂度 可调谐激光装置。 例如，本发明的实施例可以利用具有硅上的环形滤波器的混合III-V /硅增益区域形成具有来自III-V区域的有效增益的可调谐激光器，同时提供宽的可调谐性，有效的可调谐性以及由于 硅环的性质。
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