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公开(公告)号：US20180301189A1
公开(公告)日：2018-10-18
申请号：US15570932
申请日：2015-08-07
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Miao Hu , John Paul Strachan , Zhiyong Li , R. Stanley Williams
Abstract: A crossbar array, comprises a plurality of row lines, a plurality of column lines intersecting the plurality of row lines at a plurality of intersections, and a plurality of junctions coupled between the plurality of row lines and the plurality of column lines at a portion of the plurality of intersections. Each junction comprises a resistive memory element, and the junctions are positioned to calculate a matrix multiplication of a first matrix and a second matrix.
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公开(公告)号：US20170372782A1
公开(公告)日：2017-12-28
申请号：US15536602
申请日：2014-12-17
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Gary Gibson , R. Stanley Williams
CPC classification number: G11C13/0069 , G11C13/0007 , G11C2013/008 , G11C2213/15 , G11C2213/52 , H01L45/08 , H01L45/1233 , H01L45/128 , H01L45/146
Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.
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公开(公告)号：US20160343432A1
公开(公告)日：2016-11-24
申请号：US15113914
申请日：2014-01-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Richard H. Henze , Naveen Muralimanohar , Yoocharn Jeon , Martin Foltin , Erik Ordentlich , Gregg B. Lesartre , R. Stanley Williams
IPC: G11C13/00 , H01L27/24 , H01L45/00 , H01L23/528
CPC classification number: G11C13/004 , G11C5/025 , G11C11/005 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/71 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L23/528 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147
Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.
Abstract translation: 具有多个延迟层的非易失性存储器件包括至少两个交叉存储器阵列，每个横向存储器阵列包括多个存储器单元，每个存储器单元连接到字线和位于交叉点的位线。 交叉开关存储器阵列每个具有不同的延迟。 交叉开关存储器阵列形成在单个管芯上。
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公开(公告)号：US11283012B2
公开(公告)日：2022-03-22
申请号：US16532096
申请日：2019-08-05
Applicant: Hewlett Packard Enterprise Development LP
Inventor： R. Stanley Williams
Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
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公开(公告)号：US10049738B2
公开(公告)日：2018-08-14
申请号：US15536602
申请日：2014-12-17
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Gary Gibson , R. Stanley Williams
Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.
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Patent Agency Ranking
公开(公告)号：US20180075904A1
公开(公告)日：2018-03-15
申请号：US15557872
申请日：2015-04-27
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , Jianhua Yang , Zhiyong Li , R. Stanley Williams
CPC classification number: G11C13/004 , G11C13/003 , G11C13/0069 , G11C2213/74 , G11C2213/76 , H01L27/2418 , H01L27/2427 , H01L27/2463 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147
Abstract: A memristive crossbar array is described. The crossbar array includes a number of row lines and a number of column lines intersecting the row lines to form a number of cross points. A number of memristor cells are coupled between the row lines and the column lines at the cross points. A memristor cell includes a memristive memory element to store information and multiple selectors electrically coupled to the memristive memory element. The multiple selectors are to provide access to the memristive memory element.
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公开(公告)号：US09847126B2
公开(公告)日：2017-12-19
申请号：US15325358
申请日：2014-10-24
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Brent Buchanan , R. Stanley Williams
CPC classification number: G11C13/004 , G11C11/1673 , G11C13/0002 , G11C13/0007 , G11C2013/0045 , G11C2013/0054
Abstract: A method of increasing a read margin in a memory cell may include sensing an input current created from the application of a read voltage across a memristive device, squaring the input current, and comparing the squared input current to a reference current. A memristive device may include a memristor and a sense amplifier communicatively coupled to the memristor wherein a sensed input current created from the application of a reference voltage across a memristor is squared and wherein the sense amplifier compares the squared input current to a reference current.
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公开(公告)号：US20170317646A1
公开(公告)日：2017-11-02
申请号：US15141410
申请日：2016-04-28
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Suhas Kumar , John Paul Strachan , Gary Gibson , R. Stanley Williams
IPC: H03B7/06
Abstract: In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.
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公开(公告)号：US20170317277A1
公开(公告)日：2017-11-02
申请号：US15653210
申请日：2017-07-18
Applicant: Hewlett Packard Enterprise Development LP
Inventor： R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
Abstract: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
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公开(公告)号：US09793473B2
公开(公告)日：2017-10-17
申请号：US14914808
申请日：2013-09-05
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Shih-Yuan Wang , Jianhua Yang , Minxian Max Zhang , Alexandre M. Bratkovski , R. Stanley Williams
CPC classification number: H01L45/1253 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1608
Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
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