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    Electrically reconfigurable optical apparatus using electric field
    13.
    发明授权
    Electrically reconfigurable optical apparatus using electric field 有权

    公开(公告)号：US10955720B2

    公开(公告)日：2021-03-23

    申请号：US16296049

    申请日：2019-03-07

    Applicant: HRL Laboratories, LLC

    Inventor： Kyung-Ah Son ,  Jeong-Sun Moon ,  Ryan G. Quarfoth

    IPC: G02F1/03 ,  G02B26/00 ,  G02F1/00 ,  G02F1/19 ,  G02B27/09 ,  H04N5/33

    Abstract: An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure. The phase-change nickelate or tungsten oxide may enable to actuate large refractive index changes of more than 1 in infrared wavelength spectrums at high speeds of phase reconfiguration of more than 1 kHz by applying the electric field to the phase-change material.

    Method to make phase-change material RF switches with thermal dielectrics
    16.
    发明授权
    Method to make phase-change material RF switches with thermal dielectrics 有权
    制造具有热电介质的相变材料RF开关的方法

    公开(公告)号：US09368720B1

    公开(公告)日：2016-06-14

    申请号：US14528945

    申请日：2014-10-30

    Applicant: HRL LABORATORIES LLC

    Inventor： Jeong-Sun Moon ,  Hwa-Chang Seo

    IPC: H01L45/00

    CPC classification number: H01L45/1286 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/16

    Abstract: A switch includes an input port, an output port, a phase change material coupled between the input port and the output port, a heater, and a thermal dielectric layer in between the heater and the phase change material, and in contact with the heater and the phase change material. The thermal dielectric layer provides thermal conduction between the phase change material and the heater, and the thermal dielectric layer is nonmetallic and electrically non-conductive and includes polycrystalline AlN, diamond, or SiC.

    Abstract translation: 开关包括输入端口，输出端口，耦合在输入端口和输出端口之间的相变材料，加热器和加热器和相变材料之间的热介电层，并且与加热器和 相变材料。 热介电层在相变材料和加热器之间提供热传导，并且热介电层是非金属和非导电的并且包括多晶AlN，金刚石或SiC。

    Broadband linear amplifier architecture by combining two distributed amplifiers
    17.
    发明授权
    Broadband linear amplifier architecture by combining two distributed amplifiers 有权
    宽带线性放大器架构通过组合两个分布式放大器

    公开(公告)号：US09356564B1

    公开(公告)日：2016-05-31

    申请号：US14228169

    申请日：2014-03-27

    Applicant: HRL Laboratories, LLC

    Inventor： Jongchan Kang ,  Jeong-Sun Moon

    IPC: H03F3/60 ,  H03F3/68 ,  H03F1/32 ,  H03F3/21 ,  H03F3/193

    CPC classification number: H03F1/3205 ,  H03F3/193 ,  H03F3/211 ,  H03F3/604 ,  H03F3/607 ,  H03F2200/432

    Abstract: A broadband linear amplifier including an input, a first distributed amplifier coupled to the input and having a bias for one of Class A or Class AB operation, the first distributed amplifier including a first plurality of field effect transistors and having a first output, a second distributed amplifier coupled to the input and having a bias for Class C operation, the second distributed amplifier including a second plurality of field effect transistors and having a second output, and a summed output coupled to the first output and the second output, wherein gate widths of the first plurality of field effect transistors monotonically decrease from the input to the first output, and wherein gate widths of the second plurality of field effect transistors monotonically decrease from the input to the second output.

    Abstract translation: 一种宽带线性放大器，包括输入端，耦合到所述输入端的第一分布放大器，并具有A类或AB类工作中的一种的偏置，所述第一分布式放大器包括第一多个场效应晶体管，并具有第一输出端，​​第二输出端 分布式放大器耦合到输入并且具有用于C类操作的偏置，第二分布式放大器包括第二多个场效应晶体管并具有第二输出，以及耦合到第一输出和第二输出的求和输出，其中栅极宽度 所述第一多个场效应晶体管的所述第一多个场效应晶体管的栅极宽度从所述输入到所述第一输出单调减小，并且其中所述第二多个场效应晶体管的栅极宽度从所述输入到所述第二输出单调减小。

    Electrically-reconfigurable optical device structures with phase change materials
    20.
    发明授权
    Electrically-reconfigurable optical device structures with phase change materials 有权

    公开(公告)号：US12130507B1

    公开(公告)日：2024-10-29

    申请号：US18204158

    申请日：2023-05-31

    Applicant: HRL Laboratories, LLC

    Inventor： David Chow ,  Joseph Jensen ,  Jeong-Sun Moon ,  Kyung-Ah Son ,  Ryan Quarfoth

    IPC: G02F1/01 ,  G01J1/04 ,  G02F1/17

    CPC classification number: G02F1/0147 ,  G01J1/0407 ,  G02F1/17

    Abstract: A reconfigurable optical frequency selective structure having embedded therein:



    (a) an array of optical antennas for picking up propagating radiation in a visible or infrared frequency region and achieving preferential absorption of electromagnetic energy at a target wavelength k within the region,
    (b) an array of optical mesa structures of sub-wavelength scale including a phase-change material, the array of optical antennas being disposed atop the array of optical mesa structures respectively;
    (c) a metal ground plane disposed beneath the array of optical mesa structures, the array of optical mesa structures standing above the ground plane or an interfacial layer and being separated from one another to inhibit parasitic capacitance coupling therebetween; and
    (d) a plurality of heaters for selectively heating any one of the array of optical mesa structures to cause the phase change material in the selected optical mesa structure to change from an amorphous state, wherein the antenna atop the selected mesa structure is capacitively coupled to the metal ground plane, to a crystalline state wherein the antenna atop the selected mesa structure is electrically shunted to the ground plane via the selected mesa structure.

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