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88 条记录 (耗时 0.031 秒)

    Method of manufacturing a semiconductor device
    11.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06211535B1

    公开(公告)日：2001-04-03

    申请号：US09426947

    申请日：1999-10-26

    申请人： Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Katunobu Awane ,  Fumiaki Funada ,  Shunpei Yamazaki

    发明人： Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Katunobu Awane ,  Fumiaki Funada ,  Shunpei Yamazaki

    IPC分类号： H01L2348

    CPC分类号： H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： Method of forming an active layer for TFTs without plasma-damaging the side surfaces of the active layer. The method is started with forming a crystalline silicon film on a glass substrate. A resist mask is placed on the silicon film. The silicon film is etched with an etchant gas consisting mainly of a halogen fluoride gas, thus forming the active layer. During this process, the etchant gas is not changed into a plasma to prevent the side surfaces of the active layer from being plasma-damaged. ClF3 can be used as the halogen fluoride gas.

    摘要翻译： 形成TFT的有源层的方法，不会对有源层的侧表面造成等离子体损害。 该方法开始于在玻璃基板上形成结晶硅膜。 将抗蚀剂掩模放置在硅膜上。 用主要由卤素氟化物气体组成的蚀刻剂气体蚀刻硅膜，从而形成活性层。 在该过程中，蚀刻剂气体不会变成等离子体，以防止有源层的侧表面被等离子体损坏。 ClF3可用作卤素氟化物气体。

    Method of forming semiconductor device
    13.
    发明授权
    Method of forming semiconductor device 失效
    半导体器件形成方法

    公开(公告)号：US5926735A

    公开(公告)日：1999-07-20

    申请号：US802685

    申请日：1997-02-19

    申请人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Yuugo Goto ,  Satoshi Teramoto ,  Katunobu Awane ,  Yoshitaka Yamamoto ,  Toshimasa Hamada

    发明人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Yuugo Goto ,  Satoshi Teramoto ,  Katunobu Awane ,  Yoshitaka Yamamoto ,  Toshimasa Hamada

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L21/4763

    CPC分类号： H01L29/66757 ,  H01L21/28079 ,  H01L21/76802 ,  H01L27/124

    摘要： There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.

    摘要翻译： 公开了一种具有薄膜晶体管（TFT）的高度集成电路的制造方法，用作有源矩阵液晶显示器（LCD）面板中的外围驱动电路，每个像素阵列均具有电荷转移控制TFT，能够促进 在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下，形成接触孔是困难的。 该方法包括执行阳极氧化，同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上，从而部分地消除在引线和电极上形成阳极氧化膜。 在后面的制造步骤中，通过使用其上没有形成阳极氧化膜的部分形成每个接触。 这可以允许使用铝作为引线，同时能够容易地制造用于其的触点。

    Color liquid-crystal display panel with black-mask overlapping color-filter more on downwardly rubbing side of switching element
    14.
    发明授权
    Color liquid-crystal display panel with black-mask overlapping color-filter more on downwardly rubbing side of switching element 失效
    彩色液晶显示面板，在开关元件的下侧更多地具有黑色掩模重叠的彩色滤光片

    公开(公告)号：US5790219A

    公开(公告)日：1998-08-04

    申请号：US542189

    申请日：1995-10-12

    申请人： Nobuyasu Yamagishi ,  Yoshitaka Yamamoto

    发明人： Nobuyasu Yamagishi ,  Yoshitaka Yamamoto

    IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368

    CPC分类号： G02F1/133512 ,  G02F1/136213 ,  G02F2001/13373

    摘要： A color liquid-crystal display panel comprising switching elements, pixel electrodes, and feed wirings made of plural thinfilm layers deposited on the internal surface of one of the substrates, a color filter having an unevenness of more than 0.3 .mu.m, a black mask, and a liquid-crystal layer disposed between said two substrates, wherein the length of overlap of the black-mask over the color filter for every pixel is slightly different at least in a direction within a plane parallel to said substrate in order to prevent the generation of inverse tilt domain in the rub-down area caused by an application of rubbing, attaining a high image quality without light leakage.

    摘要翻译： 一种彩色液晶显示面板，包括由一个基板的内表面上沉积的多个薄膜层构成的开关元件，像素电极和馈线，具有大于0.3μm的不平坦度的滤色器，黑色掩模， 以及设置在所述两个基板之间的液晶层，其中，对于每个像素，黑色掩模在滤色器上的重叠长度至少在与所述基板平行的平面内的方向上稍微不同，以防止产生 在施加摩擦引起的摩擦区域中的反倾斜域，在没有漏光的情况下获得高图像质量。

    Semiconductor device
    18.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09525023B2

    公开(公告)日：2016-12-20

    申请号：US13473643

    申请日：2012-05-17

    申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    IPC分类号： H01L29/10 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

    CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696

    摘要： One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.

    摘要翻译： 本发明的一个实施例是包括栅电极的半导体器件; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜上并位于所述栅极电极上方的半导体层; 形成在所述半导体层上的第二绝缘膜; 形成在第二绝缘膜的顶表面和侧表面上的第一绝缘膜，半导体层的侧表面和栅极绝缘膜; 硅层，其形成在第一绝缘膜上并电连接到半导体层; 以及形成在硅层上的源电极和漏电极。 源电极和漏电极在第一绝缘膜上彼此电分离。 半导体层不与源电极和漏电极中的每一个接触。