公开(公告)号：US20100034011A1

公开(公告)日：2010-02-11

申请号：US12412644

申请日：2009-03-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

IPC分类号： G11C11/00 ,  H01L43/02

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/76 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147

摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.

摘要翻译： 本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。 可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。 在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。 该设备可以包括共享的第四电极以提供额外的编程能力。 在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

公开(公告)号：US08455117B2

公开(公告)日：2013-06-04

申请号：US12397457

申请日：2009-03-04

申请人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： H01L29/82 ,  H01F10/32 ,  G11B5/74 ,  H01F10/00 ,  H01L21/02

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

摘要翻译： 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

公开(公告)号：US08004874B2

公开(公告)日：2011-08-23

申请号：US12412644

申请日：2009-03-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

IPC分类号： G11C11/00 ,  G11C43/02

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/76 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147

摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.

摘要翻译： 本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。 可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。 在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。 该设备可以包括共享的第四电极以提供额外的编程能力。 在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

公开(公告)号：US20110032749A1

公开(公告)日：2011-02-10

申请号：US12903716

申请日：2010-10-13

申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

IPC分类号： G11C11/34 ,  H01L45/00

CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

公开(公告)号：US07830693B2

公开(公告)日：2010-11-09

申请号：US12269656

申请日：2008-11-12

申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

IPC分类号： G11C5/02

CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

公开(公告)号：US20100075599A1

公开(公告)日：2010-03-25

申请号：US12234929

申请日：2008-09-22

申请人： Haiwen Xi ,  Song Xue ,  Dexin Wang ,  Dimitar V. Dimitrov

发明人： Haiwen Xi ,  Song Xue ,  Dexin Wang ,  Dimitar V. Dimitrov

IPC分类号： H04B7/00

CPC分类号： G11C11/14 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  H01L27/22

摘要： Devices are proposed for use in nanoscale data transfer and exchange between electronic components. Spin wave generators translate an input signal charge-carrier based signal to spin waves within a ferromagnetic stripe. The spin waves propagate along the ferromagnetic stripe and are detected by spin wave detectors. Further, signal transfer devices such as a splitter, mixer, and switch are disclosed. Embodiments of the invention provide a solution for replacing copper connections, which is a limiting factor in current and future development of high-performance chips.

摘要翻译： 设备被用于纳米级数据传输和电子元件间的交换。 旋转波发生器将输入信号基于电荷载波的信号转换为铁磁条纹内的自旋波。 自旋波沿铁磁条传播，并通过自旋波检测器检测。 此外，公开了诸如分路器，混频器和开关的信号传输装置。 本发明的实施例提供了一种用于替代铜连接的解决方案，这是高性能芯片的当前和未来发展的限制因素。

公开(公告)号：US20070209437A1

公开(公告)日：2007-09-13

申请号：US11348930

申请日：2006-04-07

申请人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

发明人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

IPC分类号： B81B7/02 ,  G01P15/105 ,  G01B7/00 ,  H01L27/22 ,  H01L43/00

CPC分类号： B81B3/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/56 ,  G01C19/5663 ,  G01D5/145 ,  G01L9/007 ,  G01P15/0802 ,  G01P15/0885 ,  G01P15/105 ,  G01P15/11 ,  G01P15/18 ,  G01P2015/0828 ,  G01P2015/084 ,  H01L29/84

摘要： The present invention relates to magnetic micro-electromechanical systems (MEMS) or magnetic MEMS devices, particularly electronic devices in which a member adjoins a base or substrate and extends from the substrate proximate to a magnetic field element having an altered output associated with movement of the member. The first magnetic field element is adapted to emit or detect a magnetic field and positioned proximate to the member, and the second magnetic field element adapted to emit or detect a magnetic field and positioned proximate to the base or substrate, such that movement of the member in a first direction by a non-magnetic force results in a variation of magnetic field strength associated with displacement of the sensor in a first direction. The invention also relates to methods for fabricating magnetic MEMS devices, transducers, sensors, and accelerometers.

摘要翻译： 本发明涉及磁微机电系统（MEMS）或磁MEMS器件，特别是电子器件，其中元件邻接基底或衬底并且从衬底附近延伸到具有改变的输出的磁场元件，该变化的输出与 会员。 第一磁场元件适于发射或检测磁场并且定位成靠近构件，并且第二磁场元件适于发射或检测磁场并且定位成靠近基底或基底，使得该构件的移动 通过非磁力在第一方向上导致与传感器在第一方向上的位移相关联的磁场强度的变化。 本发明还涉及用于制造磁MEMS器件，换能器，传感器和加速度计的方法。

公开(公告)号：US20070211362A1

公开(公告)日：2007-09-13

申请号：US11373742

申请日：2006-03-10

申请人： Shaoping Li ,  Insik Jin ,  Kaizhong Gao ,  Song Xue ,  Mike Montemorra ,  Housan Dakroub ,  Jason Jury

发明人： Shaoping Li ,  Insik Jin ,  Kaizhong Gao ,  Song Xue ,  Mike Montemorra ,  Housan Dakroub ,  Jason Jury

IPC分类号： G11B20/10

CPC分类号： G11B20/14 ,  G11B5/17 ,  G11B5/3906 ,  G11B20/10009 ,  G11B20/10037 ,  G11B20/10194 ,  G11B2005/0008 ,  G11B2220/2516

摘要： A readback system includes a magnetic sensor that receives a sensor current. The magnetic sensor senses magnetic bits at a bit frequency and generates a sensor output. The readback system includes a channel circuit that modulates the sensor current at a modulation frequency higher than the bit frequency. The channel circuit samples the sensor output and combines multiple samples of the sensor output per magnetic bit into a combined sample output.

摘要翻译： 回读系统包括接收传感器电流的磁传感器。 磁传感器以位频率感测磁位，并产生传感器输出。 回读系统包括一个通道电路，该通道电路以高于位频率的调制频率调制传感器电流。 通道电路对传感器输出进行采样，并将每个磁性位的传感器输出的多个样本合并成一个组合的采样输出。

公开(公告)号：US20100141810A1

公开(公告)日：2010-06-10

申请号：US12328138

申请日：2008-12-04

申请人： LinCheng Wang ,  ChengLun Chang ,  Song Xue

发明人： LinCheng Wang ,  ChengLun Chang ,  Song Xue

IPC分类号： H04N9/64

CPC分类号： H04N5/3675

摘要： The invention relates to a method for bad pixel classification for an image sensor having a plurality of sensing elements. The method includes capturing a plurality of images using the image sensor, determining based on a pre-determined criterion, using an image of the plurality of images and a threshold value selected from one or more pre-determined threshold values, whether a sensing element in the image sensor is defective to generate a vote, wherein a threshold parameter associated with the pre-determined criterion is set to the threshold value, tallying the vote to generate a voting count by performing iterations of the determining step using different images of the plurality of images and different threshold values of the one or more pre-determined threshold values, and classifying the sensing element as a bad pixel if the voting count exceeds a pre-determined classification threshold.

摘要翻译： 本发明涉及一种具有多个传感元件的图像传感器的不良像素分类方法。 该方法包括使用图像传感器捕获多个图像，使用多个图像的图像和从一个或多个预定阈值中选择的阈值，基于预定准则来确定多个图像中的感测元件 所述图像传感器有缺陷以产生投票，其中将与所述预定标准相关联的阈值参数设置为所述阈值，通过使用所述多个图像的不同图像执行所述确定步骤的迭代来计算投票以产生投票计数 图像和一个或多个预定阈值的不同阈值，并且如果投票计数超过预定分类阈值，则将感测元件分类为不良像素。

公开(公告)号：US20060176619A1

公开(公告)日：2006-08-10

申请号：US11054455

申请日：2005-02-09

申请人： Zheng Gao ,  Song Xue ,  Eric Granstrom

发明人： Zheng Gao ,  Song Xue ,  Eric Granstrom

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/21 ,  G11B5/3903 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

摘要： A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.

摘要翻译： 磁性隧道结装置具有固定的铁磁层，自由铁磁层和由氧化镓制成的绝缘隧道势垒层。 通过氧化镓的RF溅射来沉积绝缘隧道势垒层。 磁性隧道接合装置的电阻面积小于7Ω·m 2。