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    Non-Volatile Memory Cell with Ferroelectric Layer Configurations
    3.
    发明申请
    Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
    具有铁电层配置的非易失性存储单元

    公开(公告)号：US20100135061A1

    公开(公告)日：2010-06-03

    申请号：US12326714

    申请日：2008-12-02

    申请人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    发明人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    IPC分类号： G11C11/22 ,  H01L29/68

    CPC分类号： G11C11/22 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

    摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.

    摘要翻译： 在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。 铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。 在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。 在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。 还提供了包括这种存储单元的非易失性存储器阵列。

    MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION
    8.
    发明申请
    MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
    用于旋转传动的磁力开关

    公开(公告)号：US20090289736A1

    公开(公告)日：2009-11-26

    申请号：US12125974

    申请日：2008-05-23

    申请人： Haiwen Xi ,  Dadi Setiadi ,  Insik Jin ,  Yang Li ,  Song Xue

    发明人： Haiwen Xi ,  Dadi Setiadi ,  Insik Jin ,  Yang Li ,  Song Xue

    IPC分类号： H01P1/10 ,  H01H53/00

    CPC分类号： H01H59/0009 ,  H01H57/00

    摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.

    摘要翻译： 旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。 在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。 该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。 该连接允许将旋转波从第一磁条传输到第二磁条。 第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

    Magnetic MEMS device
    9.
    发明申请
    Magnetic MEMS device 审中-公开
    磁性MEMS器件

    公开(公告)号：US20070209437A1

    公开(公告)日：2007-09-13

    申请号：US11348930

    申请日：2006-04-07

    申请人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

    发明人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

    IPC分类号： B81B7/02 ,  G01P15/105 ,  G01B7/00 ,  H01L27/22 ,  H01L43/00

    CPC分类号： B81B3/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/56 ,  G01C19/5663 ,  G01D5/145 ,  G01L9/007 ,  G01P15/0802 ,  G01P15/0885 ,  G01P15/105 ,  G01P15/11 ,  G01P15/18 ,  G01P2015/0828 ,  G01P2015/084 ,  H01L29/84

    摘要： The present invention relates to magnetic micro-electromechanical systems (MEMS) or magnetic MEMS devices, particularly electronic devices in which a member adjoins a base or substrate and extends from the substrate proximate to a magnetic field element having an altered output associated with movement of the member. The first magnetic field element is adapted to emit or detect a magnetic field and positioned proximate to the member, and the second magnetic field element adapted to emit or detect a magnetic field and positioned proximate to the base or substrate, such that movement of the member in a first direction by a non-magnetic force results in a variation of magnetic field strength associated with displacement of the sensor in a first direction. The invention also relates to methods for fabricating magnetic MEMS devices, transducers, sensors, and accelerometers.

    摘要翻译： 本发明涉及磁微机电系统（MEMS）或磁MEMS器件，特别是电子器件，其中元件邻接基底或衬底并且从衬底附近延伸到具有改变的输出的磁场元件，该变化的输出与 会员。 第一磁场元件适于发射或检测磁场并且定位成靠近构件，并且第二磁场元件适于发射或检测磁场并且定位成靠近基底或基底，使得该构件的移动 通过非磁力在第一方向上导致与传感器在第一方向上的位移相关联的磁场强度的变化。 本发明还涉及用于制造磁MEMS器件，换能器，传感器和加速度计的方法。

    Single-chip referenced full-bridge magnetic field sensor
    10.
    发明授权
    Single-chip referenced full-bridge magnetic field sensor 有权
    单芯片参考全桥磁场传感器

    公开(公告)号：US08933523B2

    公开(公告)日：2015-01-13

    申请号：US14112928

    申请日：2012-04-06

    申请人： James G. Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue ,  Xiaofeng Lei

    发明人： James G. Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue ,  Xiaofeng Lei

    IPC分类号： H01L27/22 ,  H01L43/02 ,  G01R33/09

    CPC分类号： H01L43/02 ,  G01R33/098

    摘要： The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.

    摘要翻译： 本发明公开了一种单芯片参考全桥磁阻磁场传感器。 单芯片传感器是一种惠斯通电桥布置的磁阻感应元件和参考元件。 感测元件和参考元件由磁隧道结或巨磁阻材料形成。 通过磁偏置，交换偏压，屏蔽或形状各向异性的一种或组合来控制参考和传感器元件的灵敏度。 此外，通过将参考和传感器臂电阻值的比率设置为优化桥接输出的偏移和对称性的预定比率来调节桥输出。 本发明的单芯片参考桥磁场传感器表现出优异的温度稳定性，低失调电压和优异的电压对称性。