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11.发明授权Methods and apparatus for operating high energy accelerator in low energy mode 有权在低能量模式下运行高能量加速器的方法和装置公开(公告)号：US06653642B2
公开(公告)日：2003-11-25
申请号：US09779243
申请日：2001-02-08
申请人： Bjorn O. Pedersen , Peter E. Maciejowski , William G. Goodenough , Paul J. Murphy , Charles M. McKenna
发明人： Bjorn O. Pedersen , Peter E. Maciejowski , William G. Goodenough , Paul J. Murphy , Charles M. McKenna
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/04735 , H05H5/06
摘要： Methods and apparatus are provided for efficiently operating an ion implanter which includes a charged particle accelerator in a high energy mode and in a low energy mode. The charged particle accelerator includes a high voltage power supply, an accelerator column coupled to the high voltage power supply and a switching assembly. The accelerator column includes a plurality of accelerator electrodes. The high voltage power supply is disabled from energizing the accelerator column in the low energy mode. The switching assembly includes switching elements for electrically connecting the accelerator electrodes to a reference potential in the low energy mode and for electrically isolating the accelerator electrodes from the reference potential in the high energy mode. The switching assembly prevents positive potentials on the accelerator electrodes and thus minimizes space charge expansion of the beam when transporting positive ion beams in the low energy mode.
摘要翻译： 提供了用于有效地操作离子注入机的方法和装置，其包括高能量模式和低能量模式的带电粒子加速器。 带电粒子加速器包括高压电源，耦合到高压电源的加速器柱和开关组件。 加速器柱包括多个加速器电极。 在低能量模式下，高压电源禁止加速器柱通电。 开关组件包括用于将加速器电极电连接到低能量模式中的参考电位并且用于将加速器电极与高能量模式中的参考电位电隔离的开关元件。 开关组件防止加速器电极上的正电位，从而当以低能量模式传输正离子束时，使光束的空间电荷膨胀最小化。
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公开(公告)号：US4752692A
公开(公告)日：1988-06-21
申请号：US727701
申请日：1985-04-26
CPC分类号： H01J27/26
摘要： U-shaped billet (52) has a slot (54) cut therein for receipt of a slip of insulator material (56). This body is machined on its front end (64) to produce a narrow bridge (66) of controlled cross-sectional area. Emitter needle (78) is positioned in a bore through the bridge to be heated by current through the bridge. The ion emitter body is rigid and strong to hold the emitter needle in the proper location.
摘要翻译： U形坯料（52）具有在其中切割的槽（54），用于接收绝缘体材料（56）的滑移。 该主体在其前端（64）上加工，以产生受控横截面积的窄桥（66）。 发射器针（78）定位在穿过桥的孔中，以通过电流通过桥被加热。 离子发射体是刚性和坚固的，以将发射针保持在适当的位置。
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公开(公告)号：US4687940A
公开(公告)日：1987-08-18
申请号：US842103
申请日：1986-03-20
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01J2237/0458 , H01J2237/31711 , H01J2237/31713 , H01J2237/31755
摘要： An ion beam microfabrication system is described which is capable of operating in either a flooded beam mode, in which a relatively high current beam is used to yield a rapid throughput, or in a low current, high resolution focused ion beam mode. With a focused beam a small, relatively low current ion spot is deflected in a predetermined pattern over a portion of the wafer to produce more detailed patterning that is not achievable in the flooded beam mode. A lens is added to the beam column to modify the beam collimation between the focused and flooded modes, and switching between modes is accomplished by simply actuating or de-actuating the lens. The beam is formed with a larger acceptance angle and total current in the flooded than the focused mode.
摘要翻译： 描述了能够以淹没波束模式操作的离子束微细加工系统，其中使用相对高的电流束以产生快速通量，或者以低电流，高分辨率聚焦离子束模式。 利用聚焦光束，在晶片的一部分上以预定图案偏转小的相对低电流的离子斑点以产生在淹没光束模式中不可实现的更详细的图案化。 将透镜添加到光束列以修改聚焦和淹没模式之间的光束准直，并且通过简单地致动或去激活透镜来实现模式之间的切换。 在聚焦模式下，波束形成在较大的接收角和淹没中的总电流。
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公开(公告)号：US4686414A
公开(公告)日：1987-08-11
申请号：US673465
申请日：1984-11-20
摘要： A process for enhancing the wettability of evaporation elements, such as substrates and metal reservoirs used in liquid metal ion sources, and the elements so produced wherein a coating material is wettably coated onto the evaporation element at a coating temperature greater than the ion source operating temperature. The coated element is cooled to the operating temperature, and then contacted with the molten ion source alloy. The coating material is selected to wet the substrate or reservoir at the coating temperature, but to be itself wet by the ion source alloy at the ion source operating temperature. The preferred coating metal is gold, which is first applied by electrodeposition onto the evaporation element, and the evaporation element and coating are heated to a coating temperature of about 800.degree. C. to complete the coating step. The coated evaporation element is cooled to the source operating temperature of 200.degree. C.-300.degree. C. and dipped into the ion source alloy, which may be an alloy such as lead-gold-arsenic or lead-gold-antimony.
摘要翻译： 用于提高蒸发元件（例如液态金属离子源中使用的基底和金属储存器）的润湿性的方法以及如此制备的元件，其中涂层材料以大于离子源工作温度的涂覆温度可润湿地涂覆在蒸发元件上 。 将涂覆的元件冷却至工作温度，然后与熔融离子源合金接触。 选择涂层材料以在涂覆温度下润湿基底或储存器，但是在离子源操作温度下本身被离子源合金润湿。 优选的涂层金属是金，其首先通过电沉积到蒸发元件上而被施加，并且蒸发元件和涂层被加热到约800℃的涂覆温度以完成涂布步骤。 将涂覆的蒸发元件冷却到200℃-300℃的源工作温度，并浸入离子源合金中，该合金可以是诸如铅 - 金 - 砷或铅 - 金 - 锑的合金。
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公开(公告)号：US4629931A
公开(公告)日：1986-12-16
申请号：US673466
申请日：1984-11-20
摘要： A liquid metal ion source alloy for high vapor pressure metalloids, wherein the alloy composition is chosen to have a low melting point so that the vapor pressure of the volatile constituents is low, even in the liquid state. Specifically, the ion source alloy is an alloy selected from the group of (Pb.sub.0.7-1.0 Au.sub.0.3-0).sub.0.7-0.99 (As+Sb).sub.0.3-0.01 and Pb.sub.0.20-0.30 Au.sub.0.45-0.55 (As+Sb).sub.0.20-0.30. The melting points of these alloys are about 200.degree. C.-300.degree. C., and the alloys may be maintained molten in contact with the emission elements for long periods of time without significant loss of the volatile species or reactivity with typical substrate materials used for emission elements.
摘要翻译： 一种用于高蒸气压准金属的液态金属离子源合金，其中选择合金组成具有低熔点，使得挥发性成分的蒸气压甚至在液态下也是低的。 具体地说，离子源合金是选自（Pb0.7-1.0 Au0.3-0）0.7-0.99（As + Sb）0.3-0.01和Pb0.20-0.30 Au0.45-0.55（As + Sb）0.20-0.30。 这些合金的熔点为约200℃-300℃，并且可以将合金长时间保持熔融与发射元件接触，而不会显着损失挥发物质或与所使用的典型基底材料的反应性 用于排放要素。
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公开(公告)号：US4183780A
公开(公告)日：1980-01-15
申请号：US934733
申请日：1978-08-21
IPC分类号： C23F4/00 , C23C14/42 , C23C16/517 , H01L21/3065 , H01L21/311 , H01L21/306 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116 , C23C16/517 , H01L21/3065 , Y10S422/906
摘要： A method and apparatus for modifying a surface, by either plasma etching the surface or plasma depositing a material thereon, by using vacuum ultraviolet radiation to control the modification of the surface.
摘要翻译： 通过使用真空紫外线辐射来控制表面的改性，通过等离子体蚀刻表面或等离子体在其上沉积材料来修饰表面的方法和装置。
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17.发明授权Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface 失效具有控制目标表面的表面电位的冷却结构的离子注入装置
公开(公告)号：US4118630A
公开(公告)日：1978-10-03
申请号：US794275
申请日：1977-05-05
IPC分类号： H01J37/20 , H01J37/02 , H01J37/244 , H01J37/317 , H01L21/265 , H01J37/00
CPC分类号： H01J37/244 , H01J37/026 , H01J2237/24405 , H01J2237/24507
摘要： In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. The apparatus further includes means for maintaining said shield means at a lower temperature than said target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential. Likewise, this apparatus further includes means for maintaining said shielding means at a temperature lower than said target.
摘要翻译： 在离子束装置中，用于控制靶的表面电位的结构包括与光束相邻的电子源，用于向光束提供电子，并且用于抑制直线辐射的靶和源之间的装置，即电子和其它粒子和光子辐射 在所述源和所述目标之间。 这防止了电子源对靶的加热和源与靶之间的交叉污染。 该装置还包括用于将所述屏蔽装置保持在比所述目标低的温度的装置。 提供另外的结构用于测量离子束电流，同时控制靶的表面电位，其包括：与靶相邻并与靶电绝缘并围绕光束的壁，由此壁和靶提供法拉第笼，用于引入 可变量的电子进入法拉第笼内的光束，用于测量目标电流的手段，用于组合和测量目标和壁电流以提供所述离子束电流测量的装置，以及用于改变引入的电子的量以控制目标电流的装置 从而达到目标表面电位。 同样，该装置还包括用于将所述屏蔽装置保持在低于所述目标的温度的装置。
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