公开(公告)号：US20110007766A1

公开(公告)日：2011-01-13

申请号：US12833607

申请日：2010-07-09

申请人： Robert M. Farrell ,  Matthew T. Hardy ,  Hiroaki Ohta ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Matthew T. Hardy ,  Hiroaki Ohta ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01S5/343 ,  H01S5/34 ,  H01L33/04 ,  H01L33/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2018 ,  H01S5/2031

摘要： A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.

摘要翻译： 用于改善生长在非极性或半极性（Ga，Al，In，B）N衬底上的（Ga，Al，In，B）N激光二极管的镜面切割产率的结构。 该结构包括非极性或半极性（Ga，Al，In，B）N激光二极管，其包括波导芯，其在不存在p型掺杂的含铝波导覆层的情况下为器件的工作提供足够的光学限制，并且 更多n型掺杂的含铝层，可用于辅助沿着特定结晶平面的切面。

公开(公告)号：US08692105B2

公开(公告)日：2014-04-08

申请号：US13089138

申请日：2011-04-18

申请人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L35/12 ,  H01L35/30

CPC分类号： H01L35/22

摘要： A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.

摘要翻译： 通过使用堆垛层错和/或纳米级组成波动来抑制氮化物膜的热导率的方法。 因此，本发明降低氮化物的导热性，同时保持导电性高。 此外，组成波动可以通过热电子发射增强塞贝克系数。 本发明还公开了一种具有短长度的氮化物基（例如GaN）热电横向装置。

公开(公告)号：US20110253187A1

公开(公告)日：2011-10-20

申请号：US13089138

申请日：2011-04-18

申请人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Hiroaki Ohta ,  Alexander Sztein ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L35/22

CPC分类号： H01L35/22

摘要： A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.

摘要翻译： 通过使用堆垛层错和/或纳米级组成波动来抑制氮化物膜的热导率的方法。 因此，本发明降低氮化物的导热性，同时保持导电性高。 此外，组成波动可以通过热电子发射增强塞贝克系数。 本发明还公开了一种具有短长度的氮化物基（例如GaN）热电横向装置。

公开(公告)号：US20120153297A1

公开(公告)日：2012-06-21

申请号：US13195718

申请日：2011-08-01

申请人： Chia-Lin Hsiung ,  You-Da Lin ,  Hiroaki Ohta ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Chia-Lin Hsiung ,  You-Da Lin ,  Hiroaki Ohta ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20 ,  H01L21/28

CPC分类号： H01L29/045 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： Ohmic cathode electrodes are formed on the backside of nonpolar m-plane (1-100) and semipolar (20-21) bulk gallium nitride (GaN) substrates. The GaN substrates are thinned using a mechanical polishing process. For m-plane GaN, after the thinning process, dry etching is performed, followed by metal deposition, resulting in ohmic I-V characteristics for the contact. For (20-21) GaN, after the thinning process, dry etching is performed, followed by metal deposition, followed by annealing, resulting in ohmic I-V characteristics for the contact as well.

摘要翻译： 欧姆阴极形成在非极性m面（1-100）和半极性（20-21）块状氮化镓（GaN）衬底的背面上。 使用机械抛光工艺使GaN衬底变薄。 对于m面GaN，在变薄处理之后，进行干蚀刻，随后进行金属沉积，产生用于接触的欧姆I-V特性。 对于（20-21）GaN，在变薄处理之后，进行干蚀刻，随后进行金属沉积，随后进行退火，导致接触的欧姆I-V特性。

公开(公告)号：US08895881B2

公开(公告)日：2014-11-25

申请号：US13529272

申请日：2012-06-21

申请人： Takashi Nose ,  Manabu Sakai ,  Yasuhide Tanaka ,  Hidetoshi Yoshikawa ,  Akira Goto ,  Shiho Nakano ,  Takuya Nishioka ,  Tomohiro Takahashi ,  Yoshifumi Ohwa ,  Keiichi Shimizu ,  Daisuke Kitagawa ,  Kosuke Hirano ,  Masahiko Hara ,  Hiroaki Ohta

发明人： Takashi Nose ,  Manabu Sakai ,  Yasuhide Tanaka ,  Hidetoshi Yoshikawa ,  Akira Goto ,  Shiho Nakano ,  Takuya Nishioka ,  Tomohiro Takahashi ,  Yoshifumi Ohwa ,  Keiichi Shimizu ,  Daisuke Kitagawa ,  Kosuke Hirano ,  Masahiko Hara ,  Hiroaki Ohta

IPC分类号： H01H1/26 ,  H01H13/56

CPC分类号： H01H13/56 ,  H01H2235/028 ,  H01H2239/014 ,  H01H2300/01

摘要： A power window switch has a case, a substrate disposed in the case, a window operation knob disposed on the case, a window lock button disposed on a front side of the window operation knob on the case, a window operation switch mechanism disposed in the case and activated in accordance with an operation of the window operation knob, a window lock switch mechanism disposed in the case and activated in accordance with an operation of the window lock button, and a connector having a terminal with a first terminal end protruding from the case and a second terminal end connected to the substrate. The window lock switch mechanism includes two conductive plate springs, and a pressing unit for pressing the plate springs.

摘要翻译： 电动窗开关具有壳体，设置在壳体中的基板，设置在壳体上的窗口操作旋钮，设置在壳体上的窗口操作旋钮的前侧上的窗口锁定按钮，设置在壳体中的窗口操作开关机构 壳体并且根据窗户操作旋钮的操作被激活，窗口锁定开关机构设置在壳体中并且根据窗户锁定按钮的操作被启动，以及连接器，具有端子，第一端子端部从 壳体和连接到基板的第二终端。 窗锁开关机构包括两个导电板弹簧和用于按压板簧的按压单元。

公开(公告)号：US20110274999A1

公开(公告)日：2011-11-10

申请号：US13144893

申请日：2010-01-14

申请人： Masahiro Mohri ,  Yasunori Kotani ,  Masaru Oda ,  Yasuhiro Watanabe ,  Akihiro Matsui ,  Keiko Yamazaki ,  Chikara Iwasawa ,  Hideo Okamoto ,  Masahiro Ise ,  Hiroaki Ohta

发明人： Masahiro Mohri ,  Yasunori Kotani ,  Masaru Oda ,  Yasuhiro Watanabe ,  Akihiro Matsui ,  Keiko Yamazaki ,  Chikara Iwasawa ,  Hideo Okamoto ,  Masahiro Ise ,  Hiroaki Ohta

IPC分类号： H01M8/24 ,  H01M8/04

CPC分类号： H01M8/2483 ,  H01M8/0206 ,  H01M8/0232 ,  H01M8/0234 ,  H01M8/0254 ,  H01M8/026 ,  H01M8/0263 ,  H01M8/0267 ,  H01M8/04029 ,  H01M8/1006 ,  H01M8/1007 ,  H01M8/1018 ,  H01M8/241 ,  H01M8/2457 ,  H01M2008/1095 ,  H01M2300/0082

摘要： A fuel cell stack is comprised of a plurality of power generating units which are stacked along the horizontal direction. A corrugated passage groove having a shape corresponding to the shape of the underside surface of a corrugated passage groove of a first fuel gas passage is formed in a surface of a first metal separator. A corrugated passage groove having a shape corresponding to the shape of the underside surface of a corrugated passage groove of a second oxidant gas passage is formed in a surface of a third metal separator. The corrugated passage grooves overlap one another to define a refrigerant passage. An oxidant gas inlet port and a fuel gas inlet port are provided in the upper portion of the power generating unit, and an oxidant gas outlet port and a fuel gas outlet port are provided in the lower portion of the power generating unit. A refrigerant inlet port and a refrigerant outlet port are formed in each of the left and right portions of the power generating unit.

摘要翻译： 燃料电池堆由沿着水平方向堆叠的多个发电单元构成。 在第一金属分离器的表面上形成具有与第一燃料气体通道的波纹通道槽的下表面的形状相对应的形状的波纹通道槽。 在第三金属分离器的表面上形成具有与第二氧化剂气体通道的波纹通道槽的下表面的形状相对应的形状的波纹通道槽。 波纹通道槽彼此重叠以限定制冷剂通道。 在发电单元的上部设置有氧化剂气体导入口和燃料气体入口，在发电单元的下部设有氧化剂气体出口和燃料气体出口。 制冷剂入口和制冷剂出口形成在发电单元的左右两部分中。

公开(公告)号：US07488970B2

公开(公告)日：2009-02-10

申请号：US11447567

申请日：2006-06-05

申请人： Hiroaki Ohta ,  Toshio Nishida ,  Daisuke Nakagawa

发明人： Hiroaki Ohta ,  Toshio Nishida ,  Daisuke Nakagawa

IPC分类号： H01L29/06

CPC分类号： H01L29/155 ,  B82Y20/00 ,  H01L29/2003 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333

摘要： The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

摘要翻译： 根据本发明的半导体器件包括含有带隙在层叠方向上连续单调变化的多个带隙变化薄膜的半导体层。 因此，本发明提供一种具有高可靠性和低电阻的半导体器件。

公开(公告)号：US20100189155A1

公开(公告)日：2010-07-29

申请号：US12451604

申请日：2008-05-21

申请人： Taketoshi Tanaka ,  Kuniyoshi Okamoto ,  Hiroaki Ohta

发明人： Taketoshi Tanaka ,  Kuniyoshi Okamoto ,  Hiroaki Ohta

IPC分类号： H01S5/026

CPC分类号： H01S5/02212 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4087

摘要： Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2 are bonded to the metal wiring 4. Each of the green LD 1 and the red LD 2 is a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring 4, and the other electrode is connected to a lead wire 6 or a lead wire 7. The green LD 1 is formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LD 2 is formed of an AlInGaP-based semiconductor laser diode.

摘要翻译： 提供了具有包括绿色区域等中的振荡波长的多个波长的光源并且能够小型化的激光发光装置。 金属布线4形成在支撑基板5上。绿色LD1和红色LD2接合到金属布线4.绿色LD1和红色LD2中的每一个是由半导体形成的激光二极管元件 分层结构。 元件的正极和负极中的一个被接合到金属布线4，另一个电极连接到引线6或引线7.绿色LD1由GaN基半导体激光器 具有非极性平面或半极性平面的二极管作为晶体生长的主表面。 红色LD2由AlInGaP基半导体激光二极管形成。

公开(公告)号：US07750369B2

公开(公告)日：2010-07-06

申请号：US12213005

申请日：2008-06-12

申请人： Hiroaki Ohta ,  Hirotaka Otake

发明人： Hiroaki Ohta ,  Hirotaka Otake

IPC分类号： H01L21/02

CPC分类号： H01L29/7787 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/785

摘要： A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer; a gate electrode formed to oppose the lamination boundary; and a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer.

摘要翻译： 根据本发明的氮化物半导体器件包括：氮化物半导体层叠结构，包括由III族氮化物半导体制成的第一层，层叠在第一层上并由具有组成的含Al III族氮化物半导体构成的第二层 所述氮化物半导体层叠结构包括暴露所述第一层和所述第二层之间的层叠边界的条状沟槽; 形成为与层叠边界相对的栅电极; 以及源电极和漏电极，其间具有栅电极，各自与第二层电连接。

公开(公告)号：US20090321854A1

公开(公告)日：2009-12-31

申请号：US12310362

申请日：2007-08-22

申请人： Hiroaki Ohta ,  Hidemi Takasu ,  Hirotaka Otake

发明人： Hiroaki Ohta ,  Hidemi Takasu ,  Hirotaka Otake

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/0605 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7787 ,  H01L29/7827 ,  H01L29/802

摘要： An MIS field effect transistor includes a nitride semiconductor multilayer structure including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type which is arranged on the first group III-V nitride semiconductor layer, and a third group III-V nitride semiconductor layer of the first conductivity type which is arranged on the second group III-V nitride semiconductor layer. A gate insulating film is formed on a wall surface ranging over the first, second and third group III-V nitride semiconductor layers so that the film stretches over the first, second and third group III-V nitride semiconductor layer. A gate electrode made of a conductive material is formed so that it faces the second group III-V nitride semiconductor layer via the gate insulating film. A drain electrode is provided to be electrically connected to the first group III-V nitride semiconductor layer, and a source electrode is provided to be electrically connected to the third group III-V nitride semiconductor layer.

摘要翻译： MIS场效应晶体管包括氮化物半导体多层结构，其包括第一导电类型的第一III-V族氮化物半导体层，第二导电类型的第二III-V族氮化物半导体层， V族氮化物半导体层和配置在第二III-V族氮化物半导体层上的第一导电类型的第三III族氮化物半导体层。 栅极绝缘膜形成在第一，第二和第三III-V族氮化物半导体层之上的壁表面上，使得膜在第一，第二和第三III-III族氮化物半导体层上延伸。 形成由导电材料制成的栅电极，使其经由栅极绝缘膜与第二III-V族氮化物半导体层相对。 提供漏电极以与第一III-V族氮化物半导体层电连接，并且提供与第三组III-V族氮化物半导体层电连接的源电极。