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    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N
    1.
    发明申请
    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N 审中-公开
    用于实现非绝缘和双极P型（Al，Ga，In）N的低电阻接触的技术

    公开(公告)号：US20110169138A1

    公开(公告)日：2011-07-14

    申请号：US12909702

    申请日：2010-10-21

    Applicant: You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    Inventor： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC: H01L29/20 ,  H01L21/20 ,  H01L21/28

    CPC classification number: H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/40 ,  H01L2933/0016

    Abstract: A method of fabricating a p-type contact on a nonpolar or semipolar (Al,Ga,In)N device, includes the steps of growing a p-type layer on an (Al,Ga,In)N device, wherein the (Al,Ga,In)N device is a nonpolar or semipolar (Al,Ga,In)N device, and the p-type layer is a nonpolar or semipolar (Al,Ga,In)N layer; and cooling the p-type layer down, in the presence of Bis(Cyclopentadienyl)Magnesium (Cp2Mg), to form a magnesium-nitride (MgxNy) layer on the p-type layer. A metal deposition is performed to fabricate a p-type contact on the p-type layer of the (Al,Ga,In)N device, after the cooling step, wherein the p-type contact has a contact resistivity lower than a p-type contact of a polar (Al,Ga,In)N device with substantially similar composition. A hydrogen chloride (HCl) pre-treatment of the p-type layer may be performed, after the cooling step and before the metal deposition step.

    Abstract translation: 在非极性或半极性（Al，Ga，In）N器件上制造p型接触的方法包括在（Al，Ga，In）N器件上生长p型层的步骤，其中（Al ，Ga，In）N器件是非极性或半极性（Al，Ga，In）N器件，p型层是非极性或半极性（Al，Ga，In）N层; 并在双（环戊二烯基）镁（Cp2Mg）的存在下，向下冷却p型层，以在p型层上形成氮化镁（Mg x N y）层。 在冷却步骤之后，进行金属沉积以在（Al，Ga，In）N器件的p型层上制造p型接触，其中p型接触的接触电阻低于p- 极性（Al，Ga，In）N器件的类型接触具有基本相似的组成。 可以在冷却步骤之后和金属沉积步骤之前进行p型层的氯化氢（HCl）预处理。

    LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
    2.
    发明申请
    LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES 审中-公开
    长波长无光和二极管（Al，Ga，In）N基激光二极管

    公开(公告)号：US20100309943A1

    公开(公告)日：2010-12-09

    申请号：US12795360

    申请日：2010-06-07

    Applicant: Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    Inventor： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC: H01S5/00 ,  H01L21/20

    CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3216

    Abstract: A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

    Abstract translation: 与常规激光二极管结构相比，激光二极管（1）n型层在氮载气中生长，其中激光二极管生长在杂交非极性或半极性衬底上，具有较低的阈值电流密度和较长的受激发射波长， （2）与其他器件层相比，量子阱层和阻挡层以较慢的生长速率生长（使得能够在较高温度下生长p型层），（3）高Al含量的电子阻挡层能使上述层生长 在较高温度下的有源区，和（4）不对称的AlGaN SPSLS允许含高Al含量的p-AlGaN层的生长。 使用各种其它技术来改善p型层的导电性并使接触层的接触电阻最小化。

    LIGHT EMITTING DEVICE WITH A STAIR QUANTUM WELL STRUCTURE
    4.
    发明申请
    LIGHT EMITTING DEVICE WITH A STAIR QUANTUM WELL STRUCTURE 审中-公开
    具有平坦质量结构的发光装置

    公开(公告)号：US20110089399A1

    公开(公告)日：2011-04-21

    申请号：US12901838

    申请日：2010-10-11

    Applicant: Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    Inventor： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC: H01L33/04 ,  H01L33/30

    CPC classification number: H01L33/06 ,  H01L33/32

    Abstract: A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum structure improves the radiative efficiency of the light emitting device.

    Abstract translation: 一种在有源区域中具有阶梯量子阱结构的发光器件。 台阶量子阱结构可以包括主井和单步骤或多个步骤。 发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。 楼梯量子结构提高了发光器件的辐射效率。

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