公开(公告)号：US06564445B1

公开(公告)日：2003-05-20

申请号：US09536743

申请日：2000-03-28

申请人： Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

发明人： Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

IPC分类号： G11B5127

CPC分类号： G11B5/313 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  Y10T29/49044

摘要： A method for manufacturing a magnetic head which includes a lower write pole having a projection, an upper write pole having a projection opposed to the projection of the lower write pole, and a magnetic gap interposed between the projection of the upper write pole and the projection of the upper write pole, comprising: a first step of making the magnetic gap on the projection of the lower write pole; a second step of making a non-magnetic material layer on the lower write pole, the non-magnetic material layer having a projection on its top surface in positional alignment with the projection of the lower write pole; a third step of making a mask layer on the non-magnetic material layer, the mask layer having an opening in which the top surface of the projection of the non-magnetic material layer is exposed; a fourth step of making a curved recess in the non-magnetic material layer by isotropically etching the non-magnetic material layer through the opening of the mask layer; a fifth step of making an approximately tapered recess down from the bottom of the curved recess by anisotropically etching the non-magnetic material layer through the opening of the mask layer; and a sixth step of making the upper write pole by burying a magnetic material in the tapered recess and the curved recess is provided.

公开(公告)号：US06304415B1

公开(公告)日：2001-10-16

申请号：US09615783

申请日：2000-07-13

申请人： Kohichi Tateyama ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Akio Hori ,  Takashi Koizumi ,  Tomohiko Nagata

发明人： Kohichi Tateyama ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Akio Hori ,  Takashi Koizumi ,  Tomohiko Nagata

IPC分类号： G11B531

CPC分类号： G11B5/3109 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/3163 ,  G11B5/3967

摘要： At least one magnetic pole out of a pair of magnetic poles is provided with a T-shaped magnetic pole having a magnetic pole chip at the position contacting with a magnetic gap and an auxiliary magnetic pole which is wider than thereof. The proximity of an air bearing surface of the T-shaped magnetic pole is composed of a laminated film containing a magnetic material layer with a high saturated magnetic flux density which composes the magnetic pole chip and a portion of the auxiliary magnetic pole and a magnetic material layer with a low saturated magnetic flux density which composes the remaining portion of the auxiliary magnetic pole. When the front portion of the magnetic pole with the track width of 1.8 &mgr;m or less is composed of a laminated film containing a magnetic material layer having a high saturated magnetic flux density and a magnetic material layer having a low saturated magnetic flux density, the thickness of the magnetic material layer having the high saturated magnetic flux density is 0.5 &mgr;m or more. According to the above described magnetic pole, the magnetic saturation near the tip portion of the magnetic pole is controlled, so that preferable magnetic field strength and magnetic field gradient can be attained when the track width is narrowed.

摘要翻译： 在一对磁极中的至少一个磁极设置有在与磁隙接触的位置处具有磁极片的T形磁极和比其宽的辅助磁极。 T形磁极的空气轴承表面的接近度由包含构成磁极片和辅助磁极的一部分的磁性材料层和具有高饱和磁通密度的磁性材料层的叠层膜构成， 具有构成辅助磁极的剩余部分的低饱和磁通密度的层。 当磁道宽度为1.8μm或更小的磁极的前部由包含具有高饱和磁通密度的磁性材料层和具有低饱和磁通密度的磁性材料层的层叠膜构成时，厚度 具有高饱和磁通密度的磁性材料层的厚度为0.5μm以上。 根据上述磁极，控制磁极尖端部附近的磁饱和，从而当磁道宽度变窄时可以获得优选的磁场强度和磁场梯度。

公开(公告)号：US06285531B1

公开(公告)日：2001-09-04

申请号：US09040353

申请日：1998-03-16

申请人： Yuichi Ohsawa ,  Hiroaki Yoda ,  Akio Hori ,  Masatoshi Yoshikawa ,  Masashi Sahashi

发明人： Yuichi Ohsawa ,  Hiroaki Yoda ,  Akio Hori ,  Masatoshi Yoshikawa ,  Masashi Sahashi

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/2652 ,  G11B5/313 ,  G11B5/332 ,  G11B5/4886

摘要： A magnetic head has a recording magnetic yoke on the side of an air bearing surface of which a recording magnetic gap film is interposed and a reproducing magnetic yoke on the side of an air bearing surface of which a reproducing magnetic gap film is interposed. The magnetic yoke can serve concurrently for recording/reproducing. A recording coil supplying a recording magnetic flux to a recording medium through a recording magnetic yoke is disposed along one main surface of a magnetic yoke. An MR element in which a signal magnetic flux is led from a recording medium through a reproducing magnetic yoke is disposed along the other main surface on opposite side from a recording coil of a magnetic yoke. Or, at least on extension of a film plane of a magnetic gap film, a ferromagnetic layer is disposed so as for a film plane to exist in almost perpendicular direction relative to the film plane. According to such a head structure, reproducing sensitivity decrease of the reproducing MR head due to noise or occurrence of recording fringe can be suppressed.

摘要翻译： 磁头在记录磁隙膜的空气轴承表面一侧具有记录磁轭，并且在其中插入有再现磁隙膜的空气轴承表面侧的再现磁轭。 磁轭可以同时用于记录/再现。 通过记录磁轭向记录介质提供记录磁通的记录线圈沿磁轭的一个主表面设置。 通过再现磁轭将信号磁通从记录介质引出的MR元件沿与磁轭的记录线圈相反的另一个主表面设置。 或者，至少在磁隙膜的膜平面延伸的情况下，设置铁磁层，以使膜平面相对于膜平面以大致垂直的方向存在。 根据这种头部结构，可以抑制由于噪声或记录条纹的发生而导致的再现MR磁头的再现灵敏度降低。

公开(公告)号：US6108167A

公开(公告)日：2000-08-22

申请号：US150926

申请日：1998-09-10

申请人： Kohichi Tateyama ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Akio Hori ,  Takashi Koizumi ,  Tomohiko Nagata

发明人： Kohichi Tateyama ,  Hiroaki Yoda ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Akio Hori ,  Takashi Koizumi ,  Tomohiko Nagata

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/187

CPC分类号： G11B5/3109 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967

摘要： At least one magnetic pole out of a pair of magnetic poles is provided with a T-shaped magnetic pole having a magnetic pole chip at the position contacting with a magnetic gap and an auxiliary magnetic pole which is wider than thereof. The proximity of an air bearing surface of the T-shaped magnetic pole is composed of a laminated film containing a magnetic material layer with a high saturated magnetic flux density which composes the magnetic pole chip and a portion of the auxiliary magnetic pole and a magnetic material layer with a low saturated magnetic flux density which composes the remaining portion of the auxiliary magnetic pole. When the front portion of the magnetic pole with the track width of 1.8 .mu.m or less is composed of a laminated film containing a magnetic material layer having a high saturated magnetic flux density and a magnetic material layer having a low saturated magnetic flux density, the thickness of the magnetic material layer having the high saturated magnetic flux density is 0.5 .mu.m or more. According to the above described magnetic pole, the magnetic saturation near the tip portion of the magnetic pole is controlled, so that preferable magnetic field strength and magnetic field gradient can be attained when the track width is narrowed.

摘要翻译： 在一对磁极中的至少一个磁极设置有在与磁隙接触的位置处具有磁极片的T形磁极和比其宽的辅助磁极。 T形磁极的空气轴承表面的接近度由包含构成磁极片和辅助磁极的一部分的磁性材料层和具有高饱和磁通密度的磁性材料层的叠层膜构成， 具有构成辅助磁极的剩余部分的低饱和磁通密度的层。 当轨道宽度为1.8μm或更小的磁极的前部由包含具有高饱和磁通密度的磁性材料层和具有低饱和磁通密度的磁性材料层的层叠膜构成时， 具有高饱和磁通密度的磁性材料层的厚度为0.5μm以上。 根据上述磁极，控制磁极尖端部附近的磁饱和，从而当磁道宽度变窄时可以获得优选的磁场强度和磁场梯度。

公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09236563B2

公开(公告)日：2016-01-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

发明人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US08895162B2

公开(公告)日：2014-11-25

申请号：US13236028

申请日：2011-09-19

申请人： Katsuya Nishiyama ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Chunlan Feng

发明人： Katsuya Nishiyama ,  Wu Feng ,  Shigemi Mizukami ,  Terunobu Miyazaki ,  Hiroaki Yoda ,  Tadashi Kai ,  Tatsuya Kishi ,  Daisuke Watanabe ,  Mikihiko Oogane ,  Yasuo Ando ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01F10/193 ,  G11C11/16 ,  H01L27/22 ,  B82Y25/00 ,  H01F10/28

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/09 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。 第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过 通过第一磁性层，第一非磁性层和第二磁性层。

公开(公告)号：US08884389B2

公开(公告)日：2014-11-11

申请号：US13618780

申请日：2012-09-14

申请人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

发明人： Masaru Toko ,  Masahiko Nakayama ,  Akihiro Nitayama ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Hiroaki Yoda

IPC分类号： H01L27/22 ,  H01L21/8239 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.

摘要翻译： 根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有 磁化方向可变并垂直于膜表面。 第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。 界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

公开(公告)号：US08705269B2

公开(公告)日：2014-04-22

申请号：US13232782

申请日：2011-09-14

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.

摘要翻译： 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置， 所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素 ，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

公开(公告)号：US08502331B2

公开(公告)日：2013-08-06

申请号：US13234720

申请日：2011-09-16

申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makoto Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

摘要翻译： 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。