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806 条记录 (耗时 0.035 秒)

    Method for manufacturing heat-resistant reinforced composite materials
    11.
    发明授权
    Method for manufacturing heat-resistant reinforced composite materials 失效
    制造耐热增强复合材料的方法

    公开(公告)号：US4097293A

    公开(公告)日：1978-06-27

    申请号：US708354

    申请日：1976-07-26

    申请人： Katsutoshi Komeya ,  Hiroshi Inoue

    发明人： Katsutoshi Komeya ,  Hiroshi Inoue

    IPC分类号： C04B35/56 ,  C04B35/563 ,  C04B35/565 ,  C04B35/581 ,  C04B35/583 ,  C04B35/584 ,  C04B35/52 ,  C04B35/70

    CPC分类号： C04B35/583 ,  C04B35/56 ,  C04B35/563 ,  C04B35/565 ,  C04B35/581 ,  C04B35/584

    摘要： A method for manufacturing heat-resistant reinforced composite materials having a fibrous structure which comprises mixing 99.8 to 90 percent by weight of a first component selected from the group consisting of the nitrides or carbides of aluminum, silicon and boron and mixtures thereof and 0.2 to 10 percent by weight of a second component selected from the group consisting of the rare earth oxides and mixtures thereof, molding the mixture into a desired shape, and sintering the molded mass to create a fibrous structure therein, said first component being 0.2 to 3.0 microns in average particle size, and said second component being 0.1 to 2.0 microns in average particle size.

    摘要翻译： 一种制造具有纤维结构的耐热增强复合材料的方法，其包括将99.8-90％重量的选自由铝，硅和硼的氮化物或碳化物及其混合物组成的组中的第一组分和0.2至10 选自由稀土氧化物及其混合物组成的组的第二组分的重量百分比，将混合物成型为所需形状，并烧结成型物质以在其中形成纤维结构，所述第一组分为0.2-3.0微米 平均粒径，所述第二成分的平均粒径为0.1〜2.0微米。

    Method of making .alpha.-silicon nitride powder
    12.
    发明授权
    Method of making .alpha.-silicon nitride powder 失效
    制造α-氮化硅粉末的方法

    公开(公告)号：US4428916A

    公开(公告)日：1984-01-31

    申请号：US79231

    申请日：1979-09-26

    申请人： Katsutoshi Komeya ,  Hiroshi Inoue ,  Shigeru Matake ,  Hiroshi Endo

    发明人： Katsutoshi Komeya ,  Hiroshi Inoue ,  Shigeru Matake ,  Hiroshi Endo

    IPC分类号： C04B35/626 ,  C01B21/068

    CPC分类号： C01B21/0685 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80

    摘要： .alpha.-Silicon nitride powder which is used as a raw material for the preparation of high strength silicon nitride with additives such as magnesia and yttrium oxide, and other sintered materials suitable for high temperatures gas turbine engine components and the like, is prepared by heating a powdered mixture of silica, carbon and at least one component selected from the group consisting of silicon nitride, silicon carbide and silicon oxynitride in a nitrogen containing atmosphere and then optionally subjecting the material to a heat treatment in an oxidizing atmosphere for decarbonization of said material as required.

    摘要翻译： 用作制备高强度氮化硅的原料的α-氮化硅粉末，其中添加剂如氧化镁和氧化钇以及其它适用于高温燃气轮机发动机部件的烧结材料等通过加热 二氧化硅，碳和至少一种选自氮化硅，碳化硅和氮氧化硅的组分的粉末混合物在含氮气氛中，然后任选地在氧化气氛中对所述材料进行热处理以使所述材料脱碳作为 需要。

    Method of producing silicon carbide powder
    14.
    发明授权
    Method of producing silicon carbide powder 失效
    生产碳化硅粉末的方法

    公开(公告)号：US4226841A

    公开(公告)日：1980-10-07

    申请号：US18264

    申请日：1979-03-07

    申请人： Katsutoshi Komeya ,  Hiroshi Inoue ,  Haruo Kudo ,  Hiroshi Endo

    发明人： Katsutoshi Komeya ,  Hiroshi Inoue ,  Haruo Kudo ,  Hiroshi Endo

    IPC分类号： C01B31/36 ,  C04B35/565

    CPC分类号： C04B35/565 ,  C01B31/36 ,  C01P2004/03 ,  C01P2004/52 ,  C01P2004/61 ,  C01P2006/80

    摘要： A method of producing a silicon carbide powder consisting of fine particles of uniform shape and size, comprising baking at 1,350.degree. to 1,850.degree. C. under a non-oxidizing atmosphere a powdery mixture consisting of 1 part by weight of silica powder or a compound forming silica powder at high temperatures, carbon powder or a compound forming carbon powder at high temperatures, and silicon carbide or a substance forming silicon carbide at high temperatures, the amounts of the silica powder-forming compounds, the carbon powder-forming compounds and the silicon carbide powder-forming substance being determined such that the amounts of the formed powders are equal to those specified above.

    摘要翻译： 一种由均匀形状和尺寸的细颗粒组成的碳化硅粉末的制造方法，包括在非氧化气氛下在1350℃至1850℃下烘烤的粉末混合物，所述混合物由1重量份的二氧化硅粉末或形成 高温下的二氧化硅粉末，碳粉或高温下形成碳粉的化合物，以及碳化硅或高温下形成碳化硅的物质，二氧化硅粉末形成化合物，碳粉末形成化合物和硅的量 确定碳化物粉末形成物质使得所形成的粉末的量等于上述规定的量。

    Aluminum nitride sintered body and preparation thereof
    15.
    发明授权
    Aluminum nitride sintered body and preparation thereof 失效
    氮化铝烧结体及其制备方法

    公开(公告)号：US4883780A

    公开(公告)日：1989-11-28

    申请号：US157150

    申请日：1988-02-11

    申请人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

    发明人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

    IPC分类号： C04B35/58 ,  C04B35/581

    CPC分类号： C04B35/581

    摘要： There are disclosed an aluminum sintered body comprising(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound containing said element,and a process for preparing the same comprising mixing aluminum nitride with(i) at least one of compound selected from the group consisting of a rare earth metal and/or an alkaline earth metal; and(ii) at least one of element selected from the group consisting of a transition element of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one of a compound containing said element;and then molding and sintering the mixture.

    摘要翻译： 公开了一种铝烧结体，其包含（a）氮化铝，（b）至少一种选自稀土金属的铝化合物，碱土金属的铝化合物和铝化合物的化合物 稀土金属和碱土金属，和（c）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素中的至少一种元素，和/或含有所述元素的至少一种化合物 和其制备方法包括将氮化铝与（i）选自稀土金属和/或碱土金属的化合物中的至少一种化合物混合; 和（ii）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素的元素中的至少一种，和/或含有所述元素的化合物中的至少一种; 然后成型和烧结混合物。

    Aluminum nitride sintered body
    16.
    发明授权
    Aluminum nitride sintered body 失效
    氮化铝烧结体

    公开(公告)号：US5001089A

    公开(公告)日：1991-03-19

    申请号：US402844

    申请日：1989-09-06

    申请人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

    发明人： Mituo Kasori ,  Kazuo Shinozaki ,  Kazuo Anzai ,  Akihiko Tsuge ,  Hiroshi Imagawa ,  Takeshi Takano ,  Fumio Ueno ,  Akihiro Horiguchi ,  Hiroshi Inoue

    IPC分类号： C04B35/581

    CPC分类号： C04B35/581

    摘要： There is disclosed an aluminum sintered body prepared by sintering aluminum nitride and additives, which consists essentially of(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound comprising the element, and the rare earth element, alkaline earth element and transition element are supplied by the additives.

    摘要翻译： 公开了通过烧结氮化铝和添加剂制备的铝烧结体，其主要由（a）氮化铝，（b）至少一种选自由稀土金属的铝化合物，铝化合物 碱土金属的铝化合物和稀土金属和碱土金属的铝化合物，和（c）选自周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素中的至少一种元素 ，和/或至少一种包含元素的化合物，稀土元素，碱土金属元素和过渡元素由添加剂提供。

    Silicon carbide sintered body and method of manufacturing the same
    17.
    发明授权
    Silicon carbide sintered body and method of manufacturing the same 失效
    碳化硅烧结体及其制造方法

    公开(公告)号：US4853299A

    公开(公告)日：1989-08-01

    申请号：US903141

    申请日：1986-09-03

    申请人： Toshiaki Mizutani ,  Takeyuki Yonezawa ,  Hiroshi Inoue ,  Akihiko Tsuge ,  Yoshiyuki Ohnuma

    发明人： Toshiaki Mizutani ,  Takeyuki Yonezawa ,  Hiroshi Inoue ,  Akihiko Tsuge ,  Yoshiyuki Ohnuma

    IPC分类号： C04B35/565

    CPC分类号： C04B35/565 ,  Y10S264/36

    摘要： A silicon carbide sintered body containing not less than 0.03% by weight of boron, a total of not more than 0.3% by weight of metallic element impurities including the boron, not more than 1.0% by weight of free carbon, a total of not more than 0.15% by weight of non-metal impurities other than the free carbon, and the balance essentially consisting of silicon carbide, and having a density of not less 3.10 g/cm.sup.3. The sintered body is manufactured by heating a molding of a mixture containing a silicon carbide powder, a boron-containing sintering assistant, and a carbon-containing oxygen scavenger to a sintering temperature. The molded body is maintained at a temperature lower than the sintering temperature during the heating process until an oxide film covering the silicon carbide powder is substantially removed by the oxygen scavenger, and the molded body is then sintered at the sintering temperature under a non-pressurized condition.

    摘要翻译： 含有不少于0.03重量％的硼，总计不超过0.3重量％的包含硼的金属元素杂质，不超过1.0重量％游离碳的碳化硅烧结体，总计不超过 超过0.15重量％的除游离碳以外的非金属杂质，余量基本上由碳化硅组成，密度不小于3.10g / cm 3。 通过将含有碳化硅粉末，含硼烧结助剂和含碳氧清除剂的混合物的成型加热至烧结温度来制造烧结体。 成型体在加热过程中保持在低于烧结温度的温度，直到氧清除剂基本上除去覆盖碳化硅粉末的氧化膜，然后在未加压的烧结温度下将成型体烧结 条件。

    Tactile sensation providing apparatus
    18.
    发明授权
    Tactile sensation providing apparatus 有权

    公开(公告)号：US11099648B2

    公开(公告)日：2021-08-24

    申请号：US13818962

    申请日：2011-08-11

    申请人： Hiroshi Inoue ,  Akinori Sato

    发明人： Hiroshi Inoue ,  Akinori Sato

    IPC分类号： G06F3/044 ,  G06F3/01

    摘要： A tactile sensation providing apparatus, so as to reduce an influence by provision of a tactile sensation on detection of a position by a touch sensor, includes a touch sensor 11, a tactile sensation providing unit 12 disposed near the sensor 11 and configured to vibrate the sensor 11, a touch sensor control unit 20 configured to transmit a scanning signal to the sensor 11 and, by receiving the signal from the sensor 11, to detect the position of the contact to the sensor, signal lines 16, 18 configured to transmit the signal between the sensor 11 and the control unit 20, and a tactile sensation control unit 30 configured to, based on the position of the contact detected by the control unit 20, control the providing unit 12 to vibrate the sensor 11. The providing unit 12 is disposed avoiding overlapping with the lines 16, 18.