公开(公告)号：US20060128155A1

公开(公告)日：2006-06-15

申请号：US10538127

申请日：2003-12-12

申请人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

发明人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

IPC分类号： H01L21/311

CPC分类号： C30B7/00 ,  C30B7/005 ,  C30B29/605

摘要： To obtain a microcolumnar structured material having a desired material. The columnar structured material includes columnar members 15 obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes 14 formed by removing columnar substances from a structured material in which the columnar substances 12 containing a first component are dispersed in a matrix member 13 containing a second component capable of forming a eutectic with the first component. The matrix member 13 may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

摘要翻译： 获得具有所需材料的微柱结构材料。 柱状结构材料包括通过将填料引入形成在多孔材料中的柱状孔中获得的柱状构件15。 多孔材料具有通过从其中将含有第一成分的柱状物质12分散在含有能够与第一成分形成共晶的第二成分的基质成分13中的结构化材料中除去柱状物质而形成的柱状孔14。 矩阵构件13可以被移除。 在柱状结构材料中，填料是导电材料，并且电极可以通过将多个孔的至少一部分中的导电材料电连接到导体来构造。

公开(公告)号：US06649824B1

公开(公告)日：2003-11-18

申请号：US09665983

申请日：2000-09-20

申请人： Tohru Den ,  Hiroshi Okura

发明人： Tohru Den ,  Hiroshi Okura

IPC分类号： H01L310352

CPC分类号： H01L51/4226 ,  H01G9/2036 ,  H01G9/2059 ,  H01L31/03682 ,  H01L51/0086 ,  H01L51/4233 ,  H01L2251/306 ,  Y02E10/546 ,  Y02E10/549

摘要： A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

摘要翻译： 一种光电转换装置，其至少包括电子接受电荷转移层，电子给体电荷转移层和存在于电荷转移层之间的光吸收层，其中电荷转移层中的任一个包含半导体针状晶体层，其包含聚集体 针状结晶或针状结晶与其他晶体的混合物，以及该装置的制造方法。 因此，提供能够平滑地进行电子传递并具有高光电转换效率的光电转换装置。

公开(公告)号：US20100003822A1

公开(公告)日：2010-01-07

申请号：US12555195

申请日：2009-09-08

申请人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

发明人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

IPC分类号： H01L21/311

CPC分类号： C30B7/00 ,  C30B7/005 ,  C30B29/605

摘要： A microcolumnar structured material having a desired material. The columnar structured material includes columnar members obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes formed by removing columnar substances from a structured material in which the columnar substances containing a first component are dispersed in a matrix member containing a second component capable of forming a eutectic with the first component. The matrix member may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

摘要翻译： 具有所需材料的微柱结构材料。 柱状结构材料包括通过将填料引入形成在多孔材料中的柱状孔中获得的柱状构件。 多孔材料具有通过从其中含有第一成分的柱状物质分散在含有能够与第一成分形成共晶的第二成分的基质成分的结构化材料中除去柱状物质而形成的柱状孔。 可以去除矩阵构件。 在柱状结构材料中，填料是导电材料，并且电极可以通过将多个孔的至少一部分中的导电材料电连接到导体来构造。

公开(公告)号：US07087831B2

公开(公告)日：2006-08-08

申请号：US10663752

申请日：2003-09-17

申请人： Tohru Den ,  Hiroshi Okura

发明人： Tohru Den ,  Hiroshi Okura

IPC分类号： H01L31/0352 ,  H01L31/0264 ,  H01L31/036

CPC分类号： H01L51/4226 ,  H01G9/2036 ,  H01G9/2059 ,  H01L31/03682 ,  H01L51/0086 ,  H01L51/4233 ,  H01L2251/306 ,  Y02E10/546 ,  Y02E10/549

摘要： A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

公开(公告)号：US20060032526A1

公开(公告)日：2006-02-16

申请号：US10537161

申请日：2003-12-12

申请人： Kazuhiko Fukutani ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Tohru Den

发明人： Kazuhiko Fukutani ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Tohru Den

IPC分类号： B32B3/26 ,  H01L35/30 ,  H01L35/28

CPC分类号： C30B29/605 ,  H01L35/32 ,  H01L35/34 ,  Y10T428/249953

摘要： A thermoelectric conversion material and a thermoelectric conversion device having a novel structure of an increased figure of merit are provided by forming nano-wires of thermoelectric material in a smaller cross-sectional size. The thermoelectric conversion material comprises nano-wires obtained by introducing a thermoelectric material (semiconductor material) into columnar pores of a porous body. The porous body is formed by providing a structure in which columns of a column-forming material containing a first component (for example, aluminum) are distributed in a matrix containing a second component (for example, silicon or germanium or a mixture of them) being eutectic with the first component, and then removing the column-forming material from the structure. The average diameter of the nano-wires of the thermoelectric material is 0.5 nm or more and less than 15 nm, and the spacing of the nano-wires is 5 nm or more and less than 20 nm.

摘要翻译： 通过以更小的横截面尺寸形成热电材料的纳米线，提供具有增加的品质因数的新颖结构的热电转换材料和热电转换装置。 热电转换材料包括通过将热电材料（半导体材料）引入到多孔体的柱状孔中而获得的纳米线。 多孔体通过提供一种结构形成，其中含有第一组分（例如铝）的成柱材料的塔分布在含有第二组分（例如硅或锗或它们的混合物）的基质中， 与第一组分共晶，然后从结构中除去柱形成材料。 热电材料的纳米线的平均直径为0.5nm以上且小于15nm，纳米线的间隔为5nm以上且小于20nm。

公开(公告)号：US20060012013A1

公开(公告)日：2006-01-19

申请号：US10535452

申请日：2003-12-12

申请人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： H01L29/40

CPC分类号： C23C14/5873 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/165 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/0657

摘要： A method of forming, on a substrate, minute-sized columnar portions of a columnar structured material at minute intervals, and a columnar structured material formed by the manufacturing method. A columnar structured material is formed through an etching process in which a pattern of minute dots formed on the substrate is utilized as a mask. The pattern of the minute dots is obtained by introducing a mask material into columnar microholes of a porous film formed on the substrate and then removing the porous film. The porous film is formed by removing columnar substances from a structured material in which the columnar substances which are so formed as to contain a first component are dispersed in a matrix which is made of another component and is so formed as to contain a second component that can form a eutectic together with the first component.

摘要翻译： 在基板上以微小的间隔在柱状结构材料的微小尺寸的柱状部分上形成通过该制造方法形成的柱状结构材料的方法。 通过蚀刻工艺形成柱状结构材料，其中使用形成在基板上的微小点的图案作为掩模。 通过将掩模材料引入形成在基板上的多孔膜的柱状微孔中，然后除去多孔膜，获得微小点的图案。 通过从结构材料中除去柱状物质形成多孔膜，其中将形成为含有第一成分的柱状物质分散在由另一成分制成的基体中，并形成为含有第二成分 可以与第一组分一起形成共晶体。

公开(公告)号：US06801352B2

公开(公告)日：2004-10-05

申请号：US10408103

申请日：2003-04-08

申请人： Hiroshi Okura ,  Tohru Den

发明人： Hiroshi Okura ,  Tohru Den

IPC分类号： G02F103

CPC分类号： G02F1/167 ,  G02F1/1506

摘要： An electrodeposition display device includes a first substrate, a second substrate facing the first substrate, walls for sealing off the substrates, plating liquid sealed in between the substrates so as to form a cell, a first electrode disposed on at least a part of the first substrate, and a second electrode disposed within the cell. Display is performed by applying signals corresponding to image information to the first electrode and the second electrode, so as to change the state thereof to a state wherein electrodeposition of metal has occurred on at least part of the first electrode, and a state wherein at least a part of metal on the first electrode has become disassociated.

摘要翻译： 电沉积显示装置包括第一基板，面对第一基板的第二基板，用于密封基板的壁，将密封在基板之间的液体进行电镀以形成单元;第一电极，设置在第一基板的至少一部分上 衬底和设置在电池内的第二电极。 通过将对应于图像信息的信号施加到第一电极和第二电极来执行显示，以将其状态改变为在第一电极的至少一部分上发生金属的电沉积的状态，以及至少 第一电极上的金属的一部分已经脱离。

公开(公告)号：US07517554B2

公开(公告)日：2009-04-14

申请号：US11339627

申请日：2006-01-26

申请人： Tatsuya Saito ,  Tohru Den ,  Kazuhiko Fukutani ,  Aya Imada

发明人： Tatsuya Saito ,  Tohru Den ,  Kazuhiko Fukutani ,  Aya Imada

IPC分类号： C23C8/00

CPC分类号： C23C14/5873 ,  B82Y30/00 ,  C23C14/165

摘要： A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.

摘要翻译： 提供一种制造纳米结构的方法，其能够通过成膜条件控制孔径和孔间隔。 该方法产生相对于铝含有20〜70原子％含有硅和锗的铝 - 硅 - 锗混合膜的纳米结构，该混合膜由组成为主要由硅和锗组成的基体构成 SixGe1-x（0 <= X <= 1）的比例，以及主要由直径不大于30nm的铝构成的圆筒部。 在该过程中，以不高于150nm / min的成膜速度形成混合膜。

公开(公告)号：US07510780B2

公开(公告)日：2009-03-31

申请号：US10532232

申请日：2003-10-22

申请人： Nobuhiro Yasui ,  Tohru Den

发明人： Nobuhiro Yasui ,  Tohru Den

IPC分类号： C25D5/26

CPC分类号： G11B5/7325 ,  C23C14/025 ,  C23C14/185 ,  C23C28/322 ,  C23C28/345 ,  Y10T428/11 ,  Y10T428/12861

摘要： The invention provides a structured material composed by including a noble metal, in which an oriented layer is formed on a layer containing a Group 4A metal. The invention enables to form an oriented layer, which has required a high temperature for formation, by a low temperature process.

摘要翻译： 本发明提供一种结构材料，其包括贵金属，其中在含有4A族金属的层上形成取向层。 本发明能够通过低温工艺形成需要高温成形的取向层。

公开(公告)号：US20080315745A1

公开(公告)日：2008-12-25

申请号：US12197842

申请日：2008-08-25

申请人： Tohru Den ,  Tatsuya Iwasaki

发明人： Tohru Den ,  Tatsuya Iwasaki

IPC分类号： H01J1/02 ,  D01F9/12

CPC分类号： D01F9/127 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/12 ,  H01J1/14 ,  H01J1/30 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

摘要： An electronic device including a pair of electrodes disposed on a substrate and carbon nanotubes electrically connecting the electrodes. A method for manufacturing this device in which the electrodes are disposed on the substrate and the nanotubes are prepared to electrically connect the electrodes.

摘要翻译： 一种电子设备，包括设置在基板上的一对电极和电连接电极的碳纳米管。 制造该器件的方法，其中电极设置在衬底上，并且准备纳米管以电连接电极。