摘要:
In each of basic cells (BC) arranged in array in an SOI layer, PMOS and NMOS transistors are symmetrically formed. Body regions (11) and (12) are formed to divide source/drain layers (1) and (2), respectively, and gate electrodes (3) and (4) are formed on the body regions (11) and (12) respectively to sandwich gate insulating films therebetween. The gate electrodes (3) and (4) are connected at their both ends to gate contact regions (5) to (8), respectively, and the body regions (11) and (12) are connected at their one ends to body contact regions (9) and (10), respectively. The body contact regions (9) and (10) are so arranged as to sandwich the gate contact regions (5) and (7) together with the gate electrodes (3) and (4), respectively. Being of a SOI type, the device achieves high-speed operation and low power consumption. Further, with positional relation between the body contact regions (9), (10) and the gate contact regions (5), (7), the device is capable of freely setting the transistors to be of either a gate control type or a gate fixed type. As a result, the gate array type semiconductor device achieves high-speed operation and low power consumption.
摘要:
A current mirror circuit including: a first resistance element having one terminal connected to a first potential, and the other terminal connected to a second potential lower than the first potential; an operational amplifier having a high-potential input terminal connected to the first potential and the one terminal of the first resistance element; a second resistance element having one terminal connected to a low-potential input terminal of the operational amplifier, and the other terminal connected to the second potential; and a transistor having a first electrode connected to an output terminal of the operational amplifier, a second electrode connected to the low-potential input terminal of the operational amplifier and the one terminal of the second resistance element, and a third electrode used as an output terminal, wherein the first and second resistance elements both start to operate from a linear area having lower voltage than a saturation area.
摘要:
There is disclosed a current mirror circuit comprising a first transistor having a first electrode connected to a first potential, a second electrode connected to a second potential lower than the first potential, and a third electrode connected to a third potential higher than the second potential, a second transistor having a first electrode connected to the first potential and the first electrode of the first transistor, and a second electrode connected to the second potential, an operational amplifier having a high-potential input connected to the third potential and the third electrode of the first transistor, and a low-potential input connected to the third electrode of the second transistor, and a third transistor having a first electrode connected to an output of the operational amplifier, a second electrode connected to the low-potential input and the third electrode of the second transistor, and a third electrode used as an output terminal.
摘要:
A signal processing method and apparatus reducing distortion using divided signals differing in only amplitude by weighting an input signal by first weights ki (i=1 to 4) to obtain divided signals, performing the same signal processing f(x) on the divided signals, weighting the signal processed divided signals by second weights l1 (i=1 to 4), and adding the divided signals Vout1 to Vout4 weighted by the second weights. The first weights are k1=t, k2=−t, k3=1, k4=−1, while the second weights are l1=−1, l2=1, l3=t3, l4=−t3. Here, t=b/a (where a and b are different positive integers).
摘要:
A field programmable gate array includes a logic blocks, switching elements for establishing a signal propagation path, and memory cells provided corresponding to the switching elements for storing data determining on and off states of corresponding switching elements. In this gate array, a supply voltage fed to a power input terminal is transmitted to power supply nodes of logic circuit blocks. A booster circuit boosts the supply voltage fed to the power input terminal and feeds the boosted voltage to power supply nodes of memory cells for programming a signal propagation path. A high-level signal potential of each memory cell is fed to the gate of an n-channel MOS transistor which functions as the switching element. The switching elements are disposed on signal lines and serve to interconnect the signal lines selectively to establish a signal propagation path. The current supply capability of the MOS transistors is enhanced to realize faster propagation of the signal, and any harmful influence of the threshold voltage exerted on the signal amplitude loss can be suppressed by a rise of the gate potential in each MOS transistor.
摘要:
A neural network device includes internal data input lines, internal data output lines, coupling elements provided at the connections of the internal data input lines and the internal data output lines, word lines each for selecting one row of coupling elements. The coupling elements couple, with specific programmable coupling strengths, the associated internal data input lines to the associated internal data output lines. In a program mode, the internal data output lines serve as signal lines for transmitting the coupling strength information. Each of the coupling elements includes memories constituted of cross-coupled inverters for storing the coupling strength information, first switching transistors responsive to signal potentials on associated word lines for connecting the memories to associated internal data output lines, second switching elements responsive to signal potentials on associated internal data input lines for transmitting the storage information in the memories to the associated internal data output lines. Each of the internal data output lines has a pair of first and second internal data output lines.
摘要:
A first impurity region is formed on the inner surface of a trench formed on the major surface of a semiconductor substrate. The trench is filled with a vertical portion of a first electric conductor having a reversed L-shaped cross section through an insulating film. A first transistor having a first impurity region serving as a source/drain region is formed on the semiconductor substrate. A second impurity region serving as a source/drain region of a second transistor is formed on the major surface of the semiconductor substrate and spaced from the trench. A second electric conductor having a reversed L-shaped cross section for connecting the vertical portion to the second impurity region is formed, and a horizontal portion of the second electric conductor is formed to be stacked on a horizontal portion of the first electric conductor with an insulating film formed therebetween.
摘要:
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switches are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.
摘要:
A memory cell array is divided into two groups, one bit line of a pair of bit lines is connected to corresponding memory cells in the first group of the memory cell array, and the other bit line thereof is connected to corresponding memory cells in the second group of the memory cell array.
摘要:
A telescopic differential operational amplifier circuit for use in a pipelined A/D converter is provided with two auxiliary differential amplifiers connected to two cascode circuits, each including cascode-connected first to fourth transistors. During the sampling phase, first and second switches are turned on to apply a predetermined bias voltage to the gates of first and fourth transistors, and the input terminal of the differential operational amplifier circuit is set to a common mode voltage. During the hold phase, the first and second switches are turned off so that a voltage of each of the gates of the first and fourth transistors change to follow an input signal inputted via the input terminal with coupling capacitors operating as a level shifter of the input signal. Then the differential operational amplifier circuit performs push-pull operation operative only in a transconductance drive region, and is prevented from operating in a slewing region.