公开(公告)号：US20100035410A1

公开(公告)日：2010-02-11

申请号：US12086418

申请日：2006-12-07

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

IPC分类号： H01L21/20

CPC分类号： C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.

摘要翻译： 提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

公开(公告)号：US20090272992A1

公开(公告)日：2009-11-05

申请号：US12223739

申请日：2007-02-08

申请人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

发明人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

摘要翻译： 本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7） 在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5） 有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

公开(公告)号：US20090166608A1

公开(公告)日：2009-07-02

申请号：US12318118

申请日：2008-12-22

申请人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

发明人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.

摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

公开(公告)号：US06670204B2

公开(公告)日：2003-12-30

申请号：US10235705

申请日：2002-09-06

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2100

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

公开(公告)号：US06469320B2

公开(公告)日：2002-10-22

申请号：US09864275

申请日：2001-05-25

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2715

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

摘要翻译： 在基板（1）上形成第一GaN层（2），在其上形成具有开口部（3a）的掩模层（3），从第二GaN层（4）的开口部 掩模层和氮化物型化合物半导体层叠部分（15）进一步层叠以形成发光层。 凹陷部分（3b）形成在掩模层的上表面侧。 换句话说，由于掩模层的上表面侧的凹部，第二GaN型化合物半导体层（4）生长成在第二GaN型化合物的底面之间形成大致平行的间隙（3c） 半导体层和掩模层。 此外，优选的是，掩模形成为使得种子露出的开口部分在晶片型基板的整个表面上不能沿单一方向连续布置。 因此，可以获得具有低位错密度和优异的发光效率的氮化物型化合物半导体发光器件，并且特别是可以获得具有降低的阈值电流值的半导体激光器。

公开(公告)号：US5404520A

公开(公告)日：1995-04-04

申请号：US55763

申请日：1993-05-03

申请人： Masayuki Sonobe

发明人： Masayuki Sonobe

IPC分类号： G06F3/06 ,  G06F9/46 ,  G06F17/30 ,  G06F13/00 ,  G06F15/16

CPC分类号： G06F9/544 ,  G06F17/30445

摘要： A batch type data input and output control system executes a file output program which outputs data to a file stored in an external storage unit from a main storage apparatus, and a file input program for processing the data in the file. An input/output parallel management means for managing parallel processing of the file output program and file input program and a data transfer unit are provided for transferring the data within the main storage unit without transferring the data through the external storage unit. The data written by the file output program is directly transmitted to the file input program, for instance in units of a character or record under control of the input/output parallel management means. The file output program and file input program are executed in parallel, and can be registered or deleted by designation of another program or a user. When one of the file output program and the file input program ends in an abnormal state, the other program is compulsorily ended. When both programs end in a normal manner and a subsequent program is designated, the subsequent program is automatically initiated.

摘要翻译： 批量型数据输入输出控制系统执行从主存储装置向存储在外部存储单元中的文件输出数据的文件输出程序，以及用于处理该文件中的数据的文件输入程序。 提供用于管理文件输出程序和文件输入程序的并行处理的输入/输出并行管理装置和数据传送单元，用于在主存储单元内传送数据而不通过外部存储单元传送数据。 由文件输出程序写入的数据直接发送到文件输入程序，例如以输入/输出并行管理装置的控制下的字符或记录为单位。 文件输出程序和文件输入程序并行执行，可以通过指定其他程序或用户进行注册或删除。 当其中一个文件输出程序和文件输入程序以异常状态结束时，其他程序被强制结束。 当两个程序以正常方式结束并指定后续程序时，自动启动后续程序。

公开(公告)号：US5377309A

公开(公告)日：1994-12-27

申请号：US799445

申请日：1991-11-27

申请人： Masayuki Sonobe ,  Ayumi Ishizaki ,  Tatsuo Kondoh

发明人： Masayuki Sonobe ,  Ayumi Ishizaki ,  Tatsuo Kondoh

IPC分类号： G06F9/06 ,  G06F9/44 ,  G06N5/04 ,  G06F15/18

CPC分类号： G06F8/20

摘要： A software work tool used in an information processor and realizing a general purpose software work tool capable of automatically performing a software operation based on the information regarding a program. The software work tool comprises a software operator for operating a program or data, a work knowledge storer for storing as a work knowledge the information for an operation by the software operator, a communicator for externally transmitting communication information including a work request or a work report, and a controller for controlling, based on the work knowledge stored in a work knowledge storer, the software operator, the work knowledge storer, and the communicator.

摘要翻译： 用于信息处理器中的软件工作工具，实现能够根据有关程序的信息自动执行软件操作的通用软件工作工具。 软件工作工具包括用于操作程序或数据的软件操作者，用于作为工作知识存储由软件操作者操作的信息的工作知识存储器，用于外部传送包括工作请求或工作报告的通信信息的通信器 以及控制器，用于基于存储在工作知识存储器中的工作知识，软件操作者，工作知识存储器和通信器来控制。

公开(公告)号：US08030669B2

公开(公告)日：2011-10-04

申请号：US11662541

申请日：2005-09-12

申请人： Yukio Shakuda ,  Toshio Nishida ,  Masayuki Sonobe

发明人： Yukio Shakuda ,  Toshio Nishida ,  Masayuki Sonobe

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/24 ,  H01L2924/12044 ,  H01L2924/00

摘要： There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.

摘要翻译： 提供了一种高可靠性的半导体发光装置，即使用于路灯或交通信号灯，也可以通过防止诸如静电等的浪涌而代替电灯或荧光灯。 通过在基板上层叠半导体层以形成发光层，通过将半导体层叠部分电分离成多个并通过提供一对形成半导体层叠部分而形成多个发光单元（1） 的电极（19）和（20）。 发光单元（1）分别与布线膜（3）串联和/或并联连接。 吸收浪涌的电感器（8）串联连接到串联连接到连接到外部电源的电极焊盘（4a）和（4b）之间的多个发光单元（1）。 例如，电感器（8）通过将多个发光单元（1）布置成旋转形状而形成。

公开(公告)号：US20100133506A1

公开(公告)日：2010-06-03

申请号：US12452060

申请日：2008-06-13

申请人： Yasuo Nakanishi ,  Shunji Nakata ,  Tetsuya Fujiwara ,  Kazuhiko Senda ,  Masayuki Sonobe

发明人： Yasuo Nakanishi ,  Shunji Nakata ,  Tetsuya Fujiwara ,  Kazuhiko Senda ,  Masayuki Sonobe

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/325

摘要： Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.

摘要翻译： 提供一种氮化物半导体发光元件，其具有层叠在AlN缓冲层上的氮化物半导体，其具有改善的质量，例如晶体质量和改善的发光输出，以及制造氮化物半导体的方法。 在蓝宝石衬底（1）上形成AlN缓冲层（2），并且n型AlGaN层（3），InGaN / GaN有源层（4）和p型GaN层（5）的氮化物半导体 在缓冲层（2）上依次分层。 在n型AlGaN层（3）的表面上形成n电极（7），在p型GaN层（5）上形成p电极（6）。 n型AlGaN层（3）用作限制光和载流子的包覆层。 AlN缓冲层（2）通过在900℃以上的生长温度下交替地供给Al材料和N材料来制造。

公开(公告)号：US20100019257A1

公开(公告)日：2010-01-28

申请号：US11815759

申请日：2006-02-07

申请人： Mitsuhiko Sakai ,  Atsushi Yamaguchi ,  Ken Nakahara ,  Masayuki Sonobe ,  Tsuyoshi Tsutsui

发明人： Mitsuhiko Sakai ,  Atsushi Yamaguchi ,  Ken Nakahara ,  Masayuki Sonobe ,  Tsuyoshi Tsutsui

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/60

摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).

摘要翻译： 提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。 在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。 第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5））， 并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。 通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。