公开(公告)号：US20070033810A1

公开(公告)日：2007-02-15

申请号：US10572708

申请日：2004-10-08

Applicant: Hitoshi Sumiya ,  Yutaka Kobayashi ,  Katsuyuki Kawate ,  Takeru Nakashima

Inventor： Hitoshi Sumiya ,  Yutaka Kobayashi ,  Katsuyuki Kawate ,  Takeru Nakashima

IPC: B23B27/20 ,  C30B11/00

CPC classification number: B23B27/20 ,  B01J3/06 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  B23B27/14 ,  B23B2240/08 ,  B24B53/12 ,  C30B29/04

Abstract: Various types of diamond tools are provided by utilizing the fact that a synthetic single crystal diamond for use in a tool having a nitrogen content of 3 ppm or less exhibits an enhanced hardness in a (100) plane in a direction and simultaneously the reduction in defects. The above synthetic single crystal diamond is synthesized by the temperature difference method under an ultra high pressure at high temperature and contains, in its crystals, nickel introduced by atomic substitution or boron and nickel introduced by atomic substitution.

Abstract translation: 通过利用在氮含量为3ppm以下的工具中使用的合成单晶金刚石在（111）方向的（100）面上显示增强的硬度，同时提供了各种类型的金刚石工具 减少缺陷 上述合成单晶金刚石通过温度差法在高温下高温合成，并在其晶体中含有通过原子取代引入的镍或通过原子取代引入的硼和镍。

公开(公告)号：US20060053969A1

公开(公告)日：2006-03-16

申请号：US10536879

申请日：2003-11-27

Applicant: Takashi Harada ,  Naohiro Toda ,  Hitoshi Sumiya

Inventor： Takashi Harada ,  Naohiro Toda ,  Hitoshi Sumiya

IPC: C22C1/04

CPC classification number: H01L35/34 ,  H01L35/14

Abstract: A thermoelectric material has an average crystal particle size of at most 50 nm and has a relative density of at least 85%. A method of manufacturing a thermoelectric material includes the steps of preparing a fine powder and sintering or compacting the fine powder under a pressure of at least 1.0 GPa and at most 10 GPa.

Abstract translation: 热电材料的平均结晶粒径为50nm以下，相对密度为85％以上。 制造热电材料的方法包括在至少1.0GPa和至多10GPa的压力下制备细粉末并烧结或压实细粉末的步骤。

公开(公告)号：US06716544B2

公开(公告)日：2004-04-06

申请号：US10129380

申请日：2002-05-03

Applicant: Shinya Uesaka ,  Hitoshi Sumiya

Inventor： Shinya Uesaka ,  Hitoshi Sumiya

IPC: B32B1800

CPC classification number: C04B41/009 ,  C04B41/5068 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  Y10T428/12576 ,  Y10T428/12736 ,  Y10T428/12806 ,  Y10T428/24967 ,  Y10T428/24983 ,  Y10T428/265 ,  C04B41/4529 ,  C04B41/5062 ,  C04B41/507 ,  C04B41/524 ,  C04B41/522 ,  C04B35/5831

Abstract: A coated cubic boron nitride (cBN) sintered body most suitable for a cutting tool having excellent resistance to wear and heat in the high-speed cutting of steel has been developed. The sintered body comprises (a) a base material made of a sintered body comprising at least 99.5 vol. % cBN and (b) a hard coating 0.1 to 10 &mgr;m in thickness formed on at least part of the surface of the base material by the PVD method. It is desirable that the hard coating comprise at least one compound layer consisting mainly of (a) at least one metal element selected from Al and the IV a-group elements and (b) at least one element selected from C, N, and O. It is desirable to provide between the base material and the hard coating an intermediate layer comprising a compound consisting mainly of boron and at least one metal element selected from the IV a-group elements.

Abstract translation: 已经开发了最适合于在钢的高速切削中具有优异的耐磨性和耐热性的切削工具的涂覆立方氮化硼（cBN）烧结体。 烧结体包括（a）由烧结体制成的基体材料，其包含至少99.5体积％ ％cBN和（b）通过PVD方法形成在基材的至少部分表面上的厚度为0.1至10μm的硬涂层。 期望的是，硬涂层包含至少一个主要由（a）至少一种选自Al和IVa族元素的金属元素组成的化合物层，和（b）选自C，N和O中的至少一种元素 期望在基材和硬涂层之间提供包含主要由硼组成的化合物和选自IVa族元素的至少一种金属元素的中间层。

公开(公告)号：US6030595A

公开(公告)日：2000-02-29

申请号：US684725

申请日：1996-07-22

Applicant: Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

Inventor： Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

IPC: B01J3/06 ,  C01B31/06 ,  C01B33/06

CPC classification number: B01J3/062 ,  C01B31/06 ,  C01B33/06 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.

Abstract translation: 可以提供具有较少杂质，晶体缺陷，应变等的高纯度合成金刚石，其中氮含量为至多10ppm，优选至多0.1ppm，硼含量为至多1ppm，优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中，并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。 无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备，该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属 含量至多1ppm，并向溶剂金属中加入氮气吸收剂，从而合成金刚石。

公开(公告)号：US4699687A

公开(公告)日：1987-10-13

申请号：US909263

申请日：1986-09-19

Applicant: Shuji Yazu ,  Hitoshi Sumiya ,  Junji Degawa

Inventor： Shuji Yazu ,  Hitoshi Sumiya ,  Junji Degawa

IPC: B01J3/06 ,  C30B9/00 ,  C30B29/38

CPC classification number: C30B9/00 ,  B01J3/062 ,  C30B29/403 ,  B01J2203/061 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  Y10S117/90 ,  Y10T117/1096

Abstract: Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.

Abstract translation: 通过使用通过一个或多个分隔层分离成多个合成室的合成容器来合成立方体系的氮化硼晶体。 在制备合成容器之后，在超高压下加热以达到从室到室所需的温度梯度。 根据温度梯度，将多个相对于氮化硼（BN）源的共晶温度的溶剂放置在室中。 BN源与被加热到较高温度的溶剂部分接触。 在加热到较低温度的每个溶剂部分中放置至少一种晶种。 在超高压和温度条件下，通过合成容器的上述加热，在室内的每种溶剂中生长至少一种立方晶系氮化硼晶体，以确保所需的温度梯度。

公开(公告)号：US09227166B2

公开(公告)日：2016-01-05

申请号：US11988891

申请日：2006-07-21

Applicant: Hitoshi Sumiya

Inventor： Hitoshi Sumiya

IPC: B01J3/06 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/626 ,  C04B35/645

CPC classification number: B01J3/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/528 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/78 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/96 ,  Y10T428/2982

Abstract: There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.

公开(公告)号：US09192899B2

公开(公告)日：2015-11-24

申请号：US13528511

申请日：2012-06-20

Applicant: Hitoshi Sumiya

Inventor： Hitoshi Sumiya

IPC: B01J3/06 ,  C01B31/06 ,  C04B35/52 ,  C04B35/626 ,  C04B35/645 ,  B82Y30/00

CPC classification number: B01J3/062 ,  B01J2203/0655 ,  B82Y30/00 ,  C01B32/25 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/421 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/96

Abstract: A diamond sintered body conventionally used in a cutting tool or the like includes an iron group metal element as a sintering aid, and therefore has a problem in heat resistance. A diamond sintered body not including the iron group metal, on the other hand, does not have sufficient mechanical strength to be used as a tool material, and also does not have conductivity, which makes electrical discharge machining impossible, and thus processing thereof is difficult. A diamond polycrystalline body having high heat resistance and mechanical strength and having conductivity enabling electrical discharge machining is obtained by using only an amorphous or fine graphite-type carbon material as a starting material, adding boron thereto and concurrently performing conversion into diamond and sintering in an ultra-high pressure and temperature condition.

Abstract translation: 通常用于切削工具等的金刚石烧结体包括作为烧结助剂的铁族金属元素，因此具有耐热性问题。 另一方面，不包含铁族金属的金刚石烧结体不具有足够的机械强度用作工具材料，也不具有导电性，这使得不能进行放电加工，因此其处理困难 。 通过仅使用无定形或细石墨型碳材料作为起始材料，可以获得具有高耐热性和机械强度并且具有导电性的金刚石多晶体，其中加入硼并同时进行金刚石的转化和烧结 超高压和温度条件。

公开(公告)号：US09061336B2

公开(公告)日：2015-06-23

申请号：US12523545

申请日：2008-01-18

Applicant: Hitoshi Sumiya ,  Makoto Yukawa

Inventor： Hitoshi Sumiya ,  Makoto Yukawa

IPC: B21C3/02 ,  B21C3/18 ,  C30B29/60 ,  B01J3/06 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/645

CPC classification number: B21C3/025 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B21C3/18 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/656 ,  C04B2235/781 ,  C04B2235/783 ,  C04B2235/785 ,  C30B29/605

Abstract: One object of the present invention is to provide a wire drawing die excellent in strength and wear resistance. The wire drawing die has a core formed using highly hard diamond polycrystalline body made substantially only of diamond and produced by directly converting a raw material composition including a non-diamond type carbon material into diamond and sintering the diamond at an ultra high pressure and an ultra high temperature without adding a sintering aid or a catalyst, the polycrystalline body having a mixed construction including fine-grained diamond crystals with a maximum grain size of less than or equal to 100 nm and an average grain size of less than or equal to 50 nm and plate-like or particulate coarse-grained diamond crystals with a minimum grain size of greater than or equal to 50 nm and a maximum grain size of less than or equal to 10000 nm.

Abstract translation: 本发明的一个目的是提供一种强度和耐磨性优异的拉丝模具。 拉丝模具具有使用基本上仅由金刚石制成的高硬度金刚石多晶体形成的芯，其通过将包含非金刚石型碳材料的原料组合物直接转化为金刚石并以超高压和超高压烧结金刚石 高温而不添加烧结助剂或催化剂，所述多晶体具有混合结构，其包括最大粒径小于或等于100nm的细晶粒金刚石晶体和小于或等于50nm的平均粒度 以及最小晶粒尺寸大于或等于50nm并且最大晶粒尺寸小于或等于10000nm的板状或颗粒状粗粒金刚石晶体。

公开(公告)号：US20140170055A1

公开(公告)日：2014-06-19

申请号：US14235758

申请日：2012-07-26

Applicant: Kazuhiro Ikeda ,  Keiko Arimoto ,  Katsuko Yamamoto ,  Hitoshi Sumiya

Inventor： Kazuhiro Ikeda ,  Keiko Arimoto ,  Katsuko Yamamoto ,  Hitoshi Sumiya

IPC: C01B31/06

CPC classification number: C01B32/25 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/0655

Abstract: Nano polycrystalline diamond is composed of carbon and a plurality of impurities other than carbon. A concentration of each of the plurality of impurities is not higher than 0.01 mass %, and the nano polycrystalline diamond has a crystal grain size (a maximum length) not greater than 500 nm. The nano polycrystalline diamond can be fabricated by preparing graphite in which a concentration of an impurity is not higher than 0.01 mass % and converting graphite to diamond by applying an ultra-high pressure and a high temperature to graphite.

Abstract translation: 纳米多晶金刚石由碳和除碳以外的多种杂质组成。 多个杂质的浓度不高于0.01质量％，纳米多晶金刚石的结晶粒径（最大长度）不大于500nm。 可以通过制备其中杂质浓度不高于0.01质量％的石墨并通过对石墨施加超高压和高温将石墨转化为金刚石来制造纳米多晶金刚石。

公开(公告)号：US5908503A

公开(公告)日：1999-06-01

申请号：US567428

申请日：1995-12-05

Applicant: Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

Inventor： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

IPC: B01J3/06 ,  C30B11/00 ,  C30B29/04

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

Abstract: A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

Abstract translation: 无色，透明的低缺陷密度的合成IIa型金刚石单晶，其中由于针状缺陷引起的蚀刻坑最多为3×10 5个/ cm 2，并且其可以应用于需要高结晶度的金刚石，例如， 单色仪，半导体衬底，X射线范围内的分光晶体，电子材料等，通过生产无色透明低缺陷密度合成金刚石单晶的方法提供，通过在晶种上生长新的金刚石晶体 金刚石，其包括使用无晶体缺陷金刚石单晶作为金刚石的晶种，并且可选地在低压和1100至1600℃的非氧化性气氛中进行热处理。 C。