公开(公告)号：US20060019178A1

公开(公告)日：2006-01-26

申请号：US11177434

申请日：2005-07-11

申请人： Jeong-Yun Lee ,  Seong-Woon Choi ,  Il-Yong Jang ,  Won-Suk Ahn ,  Sung-Jae Han

发明人： Jeong-Yun Lee ,  Seong-Woon Choi ,  Il-Yong Jang ,  Won-Suk Ahn ,  Sung-Jae Han

IPC分类号： C23C14/00 ,  G06K9/00 ,  C23C14/32 ,  G03F1/00 ,  C23F1/00 ,  C03C25/68 ,  C03C15/00 ,  B44C1/22

CPC分类号： G03F1/82 ,  G03F1/26 ,  G03F1/32

摘要： A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.

公开(公告)号：US08510684B2

公开(公告)日：2013-08-13

申请号：US13327379

申请日：2011-12-15

申请人： Moon-Gyu Jeong ,  Seong-Woon Choi ,  Jung Hoon Ser

发明人： Moon-Gyu Jeong ,  Seong-Woon Choi ,  Jung Hoon Ser

IPC分类号： G06F17/50 ,  G06F7/60

CPC分类号： G03F1/36 ,  G03F1/70 ,  G06F17/5081

摘要： A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.

摘要翻译： 形成光掩模布局的方法包括接收掩模图案的布局，从模拟中获得二维（2D）布局掩模的图像参数，从三维（3D）布局掩模的图像参数获得 模拟，并获得2D和3D蒙版的图像参数之间的差异。 2D和3D掩模的图像参数之间的差异可以通过将关于由可见核函数表示的开放区域的概率函数与掩模函数相乘以产生第一函数来进行补偿，将概率函数相对于 到由可见核函数表示的阻塞区域，具有掩模函数以产生第二函数，并且对第一函数和第二函数求和以产生补偿向量。 可以使用补偿矢量校正掩模图案的布局。

公开(公告)号：US07560198B2

公开(公告)日：2009-07-14

申请号：US11145985

申请日：2005-06-07

申请人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

发明人： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

摘要翻译： 光掩模在主区域中具有主掩模图案，在周边区域中具有浓度校正图案，以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。 曝光阻挡图案被配置为防止将密度校正图案转录到晶片。 光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的，提供至少指定主掩模图案的设计数据，并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据 层。 曝光数据包括指定曝光阻挡图案的信息，由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。

公开(公告)号：US07369254B2

公开(公告)日：2008-05-06

申请号：US11151742

申请日：2005-06-13

申请人： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung-Gook Kim

发明人： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung-Gook Kim

IPC分类号： G01N21/00

CPC分类号： G01B11/24 ,  G03F1/84

摘要： A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

摘要翻译： 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。

公开(公告)号：US20050083518A1

公开(公告)日：2005-04-21

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/14 ,  G03F7/20 ,  G01N21/00

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US20070166646A1

公开(公告)日：2007-07-19

申请号：US11590878

申请日：2006-11-01

申请人： Hee-Bom Kim ,  Seong-Woon Choi

发明人： Hee-Bom Kim ,  Seong-Woon Choi

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  H01J37/3174 ,  Y10S430/143

摘要： Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.

摘要翻译： 提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。 所述方法可以包括在衬底上形成抗蚀剂层，抗蚀剂层包括第一区域，围绕第一区域的第二区域和围绕第二区域的第三区域。 可以以第一剂量用电子束照射第二区域，并且可以以小于第一剂量的第二剂量用电子束照射第三区域。 细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。 透射区域可以从屏蔽区域延伸一段距离。 灰色图案区域可以设置在发送区域周围。 灰色图案区域可以包括具有小于分辨率限制的间距的图案。

公开(公告)号：US20070111112A1

公开(公告)日：2007-05-17

申请号：US11598754

申请日：2006-11-14

申请人： Sung-Min Huh ,  Hee-Bom Kim ,  Seong-Woon Choi

发明人： Sung-Min Huh ,  Hee-Bom Kim ,  Seong-Woon Choi

IPC分类号： G03F1/00

CPC分类号： G03F1/84

摘要： A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.

摘要翻译： 提供了一种用于制造光罩的系统和方法。 该方法包括基于掩模布局数据制作弱点数据，基于掩模布局数据制造光掩模，并且通过基于弱点数据分析所制造的光掩膜的空间图像来提取临界点数据。

公开(公告)号：US07065735B2

公开(公告)日：2006-06-20

申请号：US10401856

申请日：2003-03-27

申请人： Won-Tai Ki ,  Seong-Woon Choi

发明人： Won-Tai Ki ,  Seong-Woon Choi

IPC分类号： G06F17/50

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/36 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31769

摘要： This disclosure provides a method for manufacturing an optical proximity correction (OPC) mask, the method using an electron beam, and an OPC mask manufactured using the method. In the method, a mask is placed on a holder and a mask pattern for a photolithography process formed on the mask by illuminating the mask with an electron beam. A desired pattern is formed on the mask and an amended pattern is formed in consideration of a Kennel Effect by changing the size of the electron beam in a portion of the desired pattern where the Kennel Effect occurs. With the method, an amended pattern is made by defocusing an electron beam to change the size of the electron beam. Accordingly, an additional large amended pattern file is not required and the CPU memory for an apparatus using this method is not overloaded. This method thereby simplifies the process of manufacturing an OPC mask and complicated amended patterns are easily produced.

公开(公告)号：US07001697B2

公开(公告)日：2006-02-21

申请号：US10623616

申请日：2003-07-22

申请人： Jong-Rak Park ,  Seong-Woon Choi ,  Gi-Sung Yeo ,  Sung-Hoon Jang

发明人： Jong-Rak Park ,  Seong-Woon Choi ,  Gi-Sung Yeo ,  Sung-Hoon Jang

IPC分类号： G01F9/00

CPC分类号： G02B27/0927 ,  G02B5/1871 ,  G02B27/09 ,  G02B27/0938 ,  G02B27/46 ,  G03F1/50 ,  G03F7/70191

摘要： A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.

摘要翻译： 用于光刻的光掩模具有衬底，衬底一侧的主图案和衬底另一侧的透明度调节层。 透明度调整层具有允许其在曝光处理期间改变在主图案上入射的照明强度的特性。 在制造光掩模时，仅使用基板和主图案在晶片上进行第一曝光处理。 测量作为第一曝光处理的结果在晶片上形成的图案的元件的临界尺寸。 然后在设计透明度调整层的布局时，将这些关键尺寸与参考临界尺寸之间的差异用于改变层的特性以补偿这种差异。

公开(公告)号：US06835507B2

公开(公告)日：2004-12-28

申请号：US10211359

申请日：2002-08-05

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F900

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。