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公开(公告)号：US20180329289A1
公开(公告)日：2018-11-15
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
IPC: G03F1/64 , C01B32/159 , G03F1/22
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US20180162115A1
公开(公告)日：2018-06-14
申请号：US15836737
申请日：2017-12-08
Applicant: IMEC VZW , Katholieke Universiteit Leuven
Inventor： Steven Brems , Cedric Huyghebaert , Ken Verguts , Stefan De Gendt
IPC: B32B43/00 , B32B9/00 , B32B15/04 , B32B37/00 , C01B32/184 , C01B32/194 , C07F7/08 , C07F7/10 , C25F5/00
CPC classification number: B32B43/006 , B32B9/007 , B32B15/04 , B32B37/00 , B32B37/025 , B32B37/18 , B32B38/10 , B32B2311/06 , B81C1/00 , C01B32/184 , C01B32/194 , C01B2204/02 , C07F7/081 , C07F7/10 , C25F5/00 , Y02P20/582 , Y10T156/11 , Y10T156/19
Abstract: The disclosed technology generally relates to preparing two-dimensional material layers, and more particularly to releasing a graphene layer from a template substrate. According to an aspect, a method of releasing a graphene layer includes providing a template substrate on which the graphene layer is provided, the method comprising: subjecting the graphene layer and the template substrate to a water treatment by soaking the graphene layer and the template substrate in water such that water is intercalated between the template substrate and the graphene layer; and subjecting the graphene layer and the template substrate to a delamination process, thereby releasing the graphene layer from the template substrate.
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公开(公告)号：US09982360B2
公开(公告)日：2018-05-29
申请号：US14486678
申请日：2014-09-15
Applicant: IMEC VZW
Inventor： Cedric Huyghebaert , Philippe M. Vereecken , Geoffrey Pourtois
CPC classification number: C25F5/00 , B32B37/025 , B32B38/0008 , C01B32/19 , C01B32/194 , H01L21/187 , Y10T428/30
Abstract: A method for transferring a graphene layer from a metal substrate to a second substrate is provided comprising: providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate by passing protons through the graphene layer, treating the metal substrate having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from the adsorbed hydrogen atoms, thereby detaching the graphene layer from the metal substrate, transferring the graphene layer to the second substrate, and optionally reusing the metal substrate by repeating the aforementioned steps.
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公开(公告)号：US20170179263A1
公开(公告)日：2017-06-22
申请号：US15380887
申请日：2016-12-15
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Geoffrey Pourtois , Anh Khoa Lu , Cedric Huyghebaert
IPC: H01L29/66 , H01L29/786
CPC classification number: H01L29/66977 , H01L29/16 , H01L29/24 , H01L29/402 , H01L29/778 , H01L29/7831 , H01L29/78645 , H01L29/78648 , H01L29/78681 , H01L29/78684 , H01L29/78696
Abstract: A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.
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公开(公告)号：US11599019B2
公开(公告)日：2023-03-07
申请号：US17131297
申请日：2020-12-22
Applicant: IMEC VZW
Inventor： Marina Timmermans , Cedric Huyghebaert , Ivan Pollentier , Elie Schapmans , Emily Gallagher
Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
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Patent Agency Ranking
公开(公告)号：US10353284B2
公开(公告)日：2019-07-16
申请号：US15979813
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Rik Jonckheere , Cedric Huyghebaert , Emily Gallagher
Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.
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公开(公告)号：US20180329291A1
公开(公告)日：2018-11-15
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
IPC: G03F1/64
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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公开(公告)号：US09899501B2
公开(公告)日：2018-02-20
申请号：US15380887
申请日：2016-12-15
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Geoffrey Pourtois , Anh Khoa Lu , Cedric Huyghebaert
IPC: H03K3/01 , H01L29/66 , H01L29/786
CPC classification number: H01L29/66977 , H01L29/16 , H01L29/24 , H01L29/402 , H01L29/778 , H01L29/7831 , H01L29/78645 , H01L29/78648 , H01L29/78681 , H01L29/78684 , H01L29/78696
Abstract: A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.
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公开(公告)号：US20240210343A1
公开(公告)日：2024-06-27
申请号：US18392429
申请日：2023-12-21
Applicant: IMEC VZW
Inventor： Anne Verhulst , Pol Van Dorpe , Liesbet Lagae , Cedric Huyghebaert
IPC: G01N27/12
CPC classification number: G01N27/128
Abstract: In a first aspect, a nanopore sensing device is provided that includes: (i) a nanopore having a first orifice and second orifice, and a length running from the first to the second orifice; and (ii) one or more sensors for sensing an electric feature in the nanopore; wherein the nanopore sensing device comprises a plurality of sensing layers arranged along the length, each sensing layer being part of one of the sensors and each adjacent pair of sensing layers being separated by an isolating layer, and at least one of the sensors is a field-effect transistor.
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公开(公告)号：US20210356399A1
公开(公告)日：2021-11-18
申请号：US17323115
申请日：2021-05-18
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Alessandra Leonhardt , Cesar Javier Lockhart De La Rosa , Stefan De Gendt , Cedric Huyghebaert , Steven Brems , Thomas Nuytten
Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.
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