公开(公告)号：US11282926B2

公开(公告)日：2022-03-22

申请号：US16814174

申请日：2020-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Wolfgang Bergner ,  Andre Rainer Stegner

IPC: H01L21/46 ,  H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is electrically contacted with a first surface of the SiC body and forms a pn junction with the second semiconductor area. The first and second semiconductor areas are arranged on one another in a vertical direction perpendicular to the first surface. The first semiconductor area has first and second dopant species. An average dopant concentration of the first dopant species in a first part of the first semiconductor area adjoining the first surface is greater than an average dopant concentration of the second dopant species. An average dopant concentration of the second dopant species in a second part of the first semiconductor area adjoining the second semiconductor area is greater than a dopant concentration of the first dopant species.

公开(公告)号：US11094779B2

公开(公告)日：2021-08-17

申请号：US15496223

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Philip Christoph Brandt ,  Andre Rainer Stegner ,  Francisco Javier Santos Rodriguez ,  Frank Dieter Pfirsch ,  Hans-Joachim Schulze ,  Manfred Pfaffenlehner ,  Thomas Auer

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861 ,  H01L21/225 ,  H01L21/266 ,  H01L21/324 ,  H01L21/761 ,  H01L29/739 ,  H01L29/74 ,  H01L21/265

Abstract: An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

公开(公告)号：US10424636B2

公开(公告)日：2019-09-24

申请号：US15386077

申请日：2016-12-21

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Martin Brandt ,  Andre Rainer Stegner ,  Martin Stutzmann

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/861 ,  H01L29/78 ,  H01L29/417

Abstract: A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

公开(公告)号：US20190259841A1

公开(公告)日：2019-08-22

申请号：US16277227

申请日：2019-02-15

Applicant: Infineon Technologies AG

Inventor： Andre Rainer Stegner ,  Hans-Joachim Schulze

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L29/861 ,  H01L29/417 ,  H01L29/423

Abstract: The disclosure relates to a semiconductor device having a SiC semiconductor body. The SiC semiconductor body includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first semiconductor region is electrically contacted at a first surface of the SiC semiconductor body and forms a pn junction with the second semiconductor region. The first semiconductor region and the second semiconductor region are arranged one above the other in a vertical direction perpendicular to the first surface. The first semiconductor region has a first dopant species and a second dopant species.

公开(公告)号：US09954068B2

公开(公告)日：2018-04-24

申请号：US14866157

申请日：2015-09-25

Applicant: Infineon Technologies AG

Inventor： Philip Christoph Brandt ,  Francisco Javier Santos Rodriguez ,  Andre Rainer Stegner

IPC: H01L29/423 ,  H01L21/02 ,  H01L29/78 ,  H01L29/739 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L29/4236 ,  H01L21/02244 ,  H01L21/3086 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/6656 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

Abstract: A method of forming a transistor having a gate electrode includes forming a sacrificial layer over a semiconductor substrate, forming a patterning layer over the sacrificial layer, patterning the patterning layer to form patterned structures, forming spacers adjacent to sidewalls of the patterned structures, removing the patterned structures, etching through the sacrificial layer using the spacers as an etching mask and etching into the semiconductor substrate, thereby forming trenches in the semiconductor substrate, and filling a conductive material in the trenches in the semiconductor substrate to form the gate electrode.

公开(公告)号：US20170317165A1

公开(公告)日：2017-11-02

申请号：US15496223

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Philip Christoph Brandt ,  Andre Rainer Stegner ,  Francisco Javier Santos Rodriguez ,  Frank Dieter Pfirsch ,  Hans-Joachim Schulze ,  Manfred Pfaffenlehner ,  Thomas Auer

IPC: H01L29/06 ,  H01L29/74 ,  H01L29/739 ,  H01L21/761 ,  H01L21/324 ,  H01L21/266 ,  H01L21/265 ,  H01L29/78 ,  H01L21/225

CPC classification number: H01L29/0623 ,  H01L21/2253 ,  H01L21/2255 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/66128 ,  H01L29/7395 ,  H01L29/7424 ,  H01L29/7811 ,  H01L29/8611

Abstract: An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

公开(公告)号：US20160240642A1

公开(公告)日：2016-08-18

申请号：US15043084

申请日：2016-02-12

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Philip Christoph Brandt ,  Andre Rainer Stegner

IPC: H01L29/739 ,  H01L29/10 ,  H01L21/324 ,  H01L29/167 ,  H01L21/265 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L29/7397 ,  H01L21/22 ,  H01L21/24 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/456 ,  H01L29/66348

Abstract: Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.

Abstract translation: 一些实施例涉及用于形成半导体器件的方法。 该方法包括在半导体衬底中形成场效应晶体管结构的源极区域。 该方法还包括形成氧化物层。 该方法还包括在形成氧化物层之后将至少一种原子类型的原子结合到场效应晶体管结构的源极区的至少一部分中。 原子类型包括硫属原子，硅原子和氩原子。

公开(公告)号：US20160141406A1

公开(公告)日：2016-05-19

申请号：US14940797

申请日：2015-11-13

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Frank Hille ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Andre Rainer Stegner ,  Christoph Weiss

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/063 ,  H01L21/26506 ,  H01L21/28568 ,  H01L29/0607 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/861

Abstract: A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

Abstract translation: 半导体器件包括扩散阻挡层，具有第一导电类型的第一电荷载流子的第一半导体区域和具有第二电荷载流子的第二半导体区域。 第一半导体区域包括与第二半导体区域接触的过渡区域，过渡区域具有第一电荷载流子的第一浓度，与扩散阻挡层接触的接触区域，接触区域具有第一浓度的第一 电荷载体，其中第二浓度高于第一浓度，以及在接触区域和过渡区域之间的损伤区域。 损伤区域被配置为与接触区域和过渡区域的第一电荷载流子的寿命和/或迁移率相比，减小损伤区域的第一电荷载流子的寿命和/或迁移率。

公开(公告)号：US12107141B2

公开(公告)日：2024-10-01

申请号：US17691251

申请日：2022-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/7813

Abstract: A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

公开(公告)号：US20200295142A1

公开(公告)日：2020-09-17

申请号：US16814174

申请日：2020-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Wolfgang Bergner ,  Andre Rainer Stegner

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is electrically contacted with a first surface of the SiC body and forms a pn junction with the second semiconductor area. The first and second semiconductor areas are arranged on one another in a vertical direction perpendicular to the first surface. The first semiconductor area has first and second dopant species. An average dopant concentration of the first dopant species in a first part of the first semiconductor area adjoining the first surface is greater than an average dopant concentration of the second dopant species. An average dopant concentration of the second dopant species in a second part of the first semiconductor area adjoining the second semiconductor area is greater than a dopant concentration of the first dopant species.