公开(公告)号：US20160197009A1

公开(公告)日：2016-07-07

申请号：US15052676

申请日：2016-02-24

Applicant: Infineon Technologies AG

Inventor： Lothar Brencher ,  Dirk Meinhold ,  Michael Hartenberger ,  Georg Seidemann ,  Wolfgang Dickenscheid

IPC: H01L21/768

CPC classification number: H01L21/76832 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76877

Abstract: A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant.

Abstract translation: 一种用于蚀刻层组件的方法，所述层组件包括夹在蚀刻层和停止层之间的中间层，所述方法包括使用第一蚀刻剂蚀刻所述蚀刻层的步骤，以及使用第二蚀刻剂蚀刻所述中间层的步骤 蚀刻剂 第一蚀刻剂包括相对于蚀刻层和中间层至少5:1的第一蚀刻选择性。 第二蚀刻剂包括相对于中间层和停止层至少5:1的第二蚀刻选择性。 第一蚀刻剂与第二蚀刻剂不同。

公开(公告)号：US20150102372A1

公开(公告)日：2015-04-16

申请号：US14052962

申请日：2013-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Stefan Kolb ,  Horst Theuss ,  Dirk Meinhold

IPC: H01L33/44 ,  H01L33/48

CPC classification number: H01L33/44 ,  H01L33/58

Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.

Abstract translation: 用于发射频率调节的红外光的半导体器件包括侧向发射极结构和侧向滤波器结构。 横向发射极结构被配置为发射具有发射极频率分布的红外光。 此外，横向滤波器结构被配置为对由横向发射器结构发射的红外光进行滤波，使得频率调节的红外光具有调整的频率分布。 调整频率分布的频率范围比发射体频率分布的频率范围窄。 此外，横向气隙位于横向发射器结构和侧向过滤器结构之间。

公开(公告)号：US09991340B2

公开(公告)日：2018-06-05

申请号：US15496690

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Steffen Bieselt ,  Dirk Meinhold

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/764 ,  B81C1/00 ,  B81B3/00

CPC classification number: H01L29/0649 ,  B81B3/0097 ,  B81C1/00063 ,  H01L21/76229 ,  H01L21/764

Abstract: According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

公开(公告)号：US20170229537A1

公开(公告)日：2017-08-10

申请号：US15496690

申请日：2017-04-25

Applicant: Infineon Technologies AG

Inventor： Steffen Bieselt ,  Dirk Meinhold

IPC: H01L29/06 ,  B81B3/00 ,  B81C1/00 ,  H01L21/762 ,  H01L21/764

CPC classification number: H01L29/0649 ,  B81B3/0097 ,  B81C1/00063 ,  H01L21/76229 ,  H01L21/764

Abstract: According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

公开(公告)号：US09663354B2

公开(公告)日：2017-05-30

申请号：US14277342

申请日：2014-05-14

Applicant: Infineon Technologies AG

Inventor： Steffen Bieselt ,  Dirk Meinhold

IPC: H01L21/76 ,  B81C1/00 ,  H01L21/762 ,  H01L29/06 ,  H01L21/764

CPC classification number: H01L29/0649 ,  B81B3/0097 ,  B81C1/00063 ,  H01L21/76229 ,  H01L21/764

Abstract: According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

公开(公告)号：US09659992B2

公开(公告)日：2017-05-23

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US09312172B2

公开(公告)日：2016-04-12

申请号：US14673707

申请日：2015-03-30

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Heinrich Koerner ,  Wolfgang Dickenscheid

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.

公开(公告)号：US09230885B2

公开(公告)日：2016-01-05

申请号：US14060641

申请日：2013-10-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Gerald Dallmann ,  Alfred Vater

IPC: H01L21/44 ,  H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/48 ,  H01L21/768 ,  H01L21/76831 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.

公开(公告)号：US20150332956A1

公开(公告)日：2015-11-19

申请号：US14277342

申请日：2014-05-14

Applicant: Infineon Technologies AG

Inventor： Steffen Bieselt ,  Dirk Meinhold

IPC: H01L21/762 ,  H01L21/764 ,  H01L29/06

CPC classification number: H01L29/0649 ,  B81B3/0097 ,  B81C1/00063 ,  H01L21/76229 ,  H01L21/764

Abstract: According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

Abstract translation: 根据半导体器件制造中的方法，在半成品半导体器件中同时蚀刻第一沟槽和第二沟槽。 第一沟槽是在最终半导体器件的第一区域和第二区域之间的机械去耦沟槽。 该方法还包括同时钝化或绝缘第一沟槽和第二沟槽的侧壁。 相关半导体器件包括被配置为在半导体器件的第一区域和第二区域之间提供机械解耦的第一沟槽。 半导体器件还包括在第一沟槽和第二沟槽的侧壁处的第二沟槽和侧壁涂层。 在第一沟槽的侧壁和第二沟槽的侧壁处的侧壁涂层是相同的材料。

公开(公告)号：US20150247879A1

公开(公告)日：2015-09-03

申请号：US14195214

申请日：2014-03-03

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold

IPC: G01P15/12

CPC classification number: G01P15/12 ,  G01P15/0802 ,  H01L41/25

Abstract: Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.

Abstract translation: 公开了各种加速度传感器。 在一些情况下，可以在后端（BEOL）期间形成惯性质量。 在其他情况下，膜可以具有弯曲的，起伏的或缠绕的形状。 在其他实施例中，惯性质量可以跨越两个或更多个压力感测结构。