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公开(公告)号：US12092704B2
公开(公告)日：2024-09-17
申请号：US17963288
申请日：2022-10-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
CPC classification number: G01R33/091 , G01R33/093 , G01R33/098
Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.
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公开(公告)号：US10989769B2
公开(公告)日：2021-04-27
申请号：US14141660
申请日：2013-12-27
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Armin Satz , Wolfgang Raberg , Hubert Brueckl , Dieter Suess
IPC: G01R33/09
Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.
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公开(公告)号：US10852369B2
公开(公告)日：2020-12-01
申请号：US16243450
申请日：2019-01-09
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Clemens Muehlenhoff , Juergen Zimmer
Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
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公开(公告)号：US20180299518A1
公开(公告)日：2018-10-18
申请号：US15956247
申请日：2018-04-18
Applicant: Infineon Technologies AG
Inventor： Wolfgang Granig , Juergen Zimmer
CPC classification number: G01R33/09 , G01R33/0047 , G01R33/091 , G01R33/093
Abstract: Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided.
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公开(公告)号：US09753101B2
公开(公告)日：2017-09-05
申请号：US14928306
申请日：2015-10-30
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
CPC classification number: G01R33/096 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/0052 , G01R33/09 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , Y10T29/49002 , Y10T29/49117
Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.
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Patent Agency Ranking
公开(公告)号：US09570676B2
公开(公告)日：2017-02-14
申请号：US15215631
申请日：2016-07-21
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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公开(公告)号：US20160238635A1
公开(公告)日：2016-08-18
申请号：US14625038
申请日：2015-02-18
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
IPC: G01R17/06
CPC classification number: G01R33/0017 , G01R33/098
Abstract: A bridge offset voltage compensation method and circuit having a bridge circuit and a tunnel magnetoresistance (TMR) resistor cascade. The bridge circuit includes a branch circuit. The TMR resistor cascade is coupled in series with the branch circuit, and is configured to provide a resistance to compensate for a bridge offset voltage of the bridge circuit.
Abstract translation: 具有桥接电路和隧道磁阻（TMR）电阻级联的桥接偏移电压补偿方法和电路。 桥接电路包括分支电路。 TMR电阻级联与分支电路串联耦合，并且被配置为提供电阻以补偿桥式电路的桥接偏移电压。
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公开(公告)号：US09244134B2
公开(公告)日：2016-01-26
申请号：US13741693
申请日：2013-01-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
CPC classification number: G01R33/09 , G01R33/0052 , H05K3/30 , Y10T29/4913
Abstract: An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
Abstract translation: 提供了一种用于制造XMR传感器的XMR传感器和方法。 XMR传感器包括基板，第一触点，第二触点和XMR结构。 基板包括第一主表面区域和第二主表面区域。 第一触点设置在第一主表面区域，第二触点设置在第二主表面区域。 XMR结构从第一接触延伸到第二接触，使得XMR结构的XMR平面沿着垂直于第一主表面区域或第二主表面区域的第一方向排列。
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19.发明申请公开(公告)号：US20140291788A1
公开(公告)日：2014-10-02
申请号：US13850345
申请日：2013-03-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。
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公开(公告)号：US11346899B2
公开(公告)日：2022-05-31
申请号：US16028738
申请日：2018-07-06
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl
Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.
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