公开(公告)号：US10476112B2

公开(公告)日：2019-11-12

申请号：US15210454

申请日：2016-07-14

Applicant: Infineon Technologies AG

Inventor： Rafael Janski ,  Kamil Karlovsky ,  Susanne Kraeuter ,  Michael Sorger

IPC: H01M10/42 ,  H01M4/38 ,  H01L27/06 ,  H01M4/66 ,  H01M10/052 ,  H01M10/058 ,  H01M6/40

Abstract: A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.

公开(公告)号：US10217830B2

公开(公告)日：2019-02-26

申请号：US15373128

申请日：2016-12-08

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Ostermann ,  Michael Sorger

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. At least one electrically conductive trench structure is located in each trench. The semiconductor device comprises an electrically insulating layer arranged between the semiconductor substrate and an electrode structure. The semiconductor device comprises a vertical electrically conductive structure extending through the electrically insulating layer. The vertical electrically conductive structure forms an electrically connection between the electrode structure and an electrically conductive trench structure located in a first trench of at a first enlarged width region. The electrically insulating layer is arranged between a second enlarged width region of the plurality of enlarged width regions of the first trench and an electrode structure above the second enlarged width region without any vertical electrical connections through the electrically insulating layer at the second enlarged width region.

公开(公告)号：US09627670B2

公开(公告)日：2017-04-18

申请号：US13955221

申请日：2013-07-31

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Michael Sorger ,  Magdalena Forster ,  Katharina Schmut

IPC: H01M2/16 ,  H01M2/14 ,  H01M10/0525

CPC classification number: H01M2/1673 ,  H01M2/145 ,  H01M2/1646 ,  H01M10/0525 ,  H01M2300/0085 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49108

Abstract: Embodiments provide a battery cell including a porous membrane, the porous membrane including transformed semiconductor material. The porous membrane separates a first half-cell from a second half-cell of the battery cell. The porous membrane comprises channels allowing ions and/or an electrolyte to move between the first half-cell and the second half-cell.

公开(公告)号：US20170018812A1

公开(公告)日：2017-01-19

申请号：US15210283

申请日：2016-07-14

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Andreas Dunst ,  Georg Hirtler ,  Rafael Janski ,  Katharina Schmut ,  Michael Sorger ,  Michael Sternad ,  Martin Wilkening

IPC: H01M10/42 ,  H01M10/058 ,  H01L27/06 ,  H01M4/38 ,  H01M4/134 ,  H01M4/66 ,  H01M10/0525 ,  H01M2/16

CPC classification number: H01M10/425 ,  C03B33/0222 ,  H01L27/0688 ,  H01M2/1613 ,  H01M2/162 ,  H01M2/1626 ,  H01M2/1666 ,  H01M2/1673 ,  H01M4/134 ,  H01M4/386 ,  H01M4/66 ,  H01M10/0525 ,  H01M10/058 ,  H01M2220/30

Abstract: A method of manufacturing a battery includes introducing a suspension comprising a solvent and fibers into a cavity for housing an electrolyte, drying the solvent, filling the electrolyte into the cavity, and closing the cavity.

Abstract translation: 制造电池的方法包括将包含溶剂和纤维的悬浮液引入用于容纳电解质的空腔中，干燥溶剂，将电解质填充到空腔中并闭合空腔。

公开(公告)号：US09339868B2

公开(公告)日：2016-05-17

申请号：US14247274

申请日：2014-04-08

Applicant: Infineon Technologies AG

Inventor： Joerg Ortner ,  Michael Sorger

IPC: B22D19/00 ,  H01L21/02 ,  H01L21/768 ,  H01L21/311 ,  H01L21/48 ,  H01L23/00 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  H05K1/02

CPC classification number: B22D19/0072 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02 ,  H01L21/311 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02371 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0502 ,  H01L2224/06182 ,  H01L2224/06188 ,  H01L2224/94 ,  H01L2924/181 ,  H05K1/02 ,  H05K2201/09036 ,  H05K2203/0108 ,  H05K2203/308 ,  Y10S977/887 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, a stamp device may be disposed at least in the trench; at least one part of the trench that is free from the stamp device may be at least partially filled with trench filling material; and the stamp device may be removed from the trench.

Abstract translation: 在根据实施例的处理衬底的方法中，可以在衬底中形成沟槽，印模器件可以至少设置在沟槽中; 沟槽的至少一部分没有印模装置可以至少部分地填充有沟槽填充材料; 并且邮票装置可以从沟槽中移除。

公开(公告)号：US09126260B2

公开(公告)日：2015-09-08

申请号：US14247282

申请日：2014-04-08

Applicant: Infineon Technologies AG

Inventor： Joerg Ortner ,  Michael Sorger

IPC: B22D19/00 ,  H01L21/02 ,  H01L21/768 ,  H01L21/311 ,  H01L21/48 ,  H01L23/00 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: B22D19/0072 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02 ,  H01L21/311 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02371 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0502 ,  H01L2224/06182 ,  H01L2224/06188 ,  H01L2224/94 ,  H01L2924/181 ,  H05K1/02 ,  H05K2201/09036 ,  H05K2203/0108 ,  H05K2203/308 ,  Y10S977/887 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, imprint material may be deposited at least into the trench, the imprint material in the trench may be embossed using a stamp device, and the stamp device may be removed from the trench.

Abstract translation: 在根据实施例的处理衬底的方法中，沟槽可以形成在衬底中，压印材料可以至少沉积到沟槽中，沟槽中的压印材料可以使用压印装置压印，并且印模 器件可以从沟槽中移除。

公开(公告)号：US09064557B2

公开(公告)日：2015-06-23

申请号：US14085991

申请日：2013-11-21

Applicant: Infineon Technologies AG

Inventor： Wolfgang Scherr ,  Michael Sorger ,  Guenther Wellenzohn ,  Magdalena Forster ,  Philemon Schweizer ,  Katharina Schmut ,  Bernhard Goller ,  Mario Motz

IPC: G11C7/00 ,  G11C5/14

CPC classification number: G11C5/141

Abstract: A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.

Abstract translation: 公开了一种自供电的存储器系统。 该系统包括易失性电源组件，电池组件，开关组件和易失性存储器组件。 易失性供应部件配置成提供时变电源。 电池组件配置成产生非易失性电源。 开关组件被配置为从时变电源和非易失性电源产生持续电源。 易失性存储器组件被配置为通过使用持续电源来维护数据。

公开(公告)号：US20150037685A1

公开(公告)日：2015-02-05

申请号：US13955221

申请日：2013-07-31

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Michael Sorger ,  Magdalena Forster ,  Katharina Schmut

IPC: H01M2/16

CPC classification number: H01M2/1673 ,  H01M2/145 ,  H01M2/1646 ,  H01M10/0525 ,  H01M2300/0085 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49108

Abstract: Embodiments provide a battery cell including a porous membrane, the porous membrane including transformed semiconductor material. The porous membrane separates a first half-cell from a second half-cell of the battery cell. The porous membrane comprises channels allowing ions and/or an electrolyte to move between the first half-cell and the second half-cell.

Abstract translation: 实施例提供了包括多孔膜的电池单元，多孔膜包括转化的半导体材料。 多孔膜将第一半电池与电池单元的第二半电池分开。 多孔膜包括允许离子和/或电解质在第一半电池和第二半电池之间移动的通道。

公开(公告)号：US20140220257A1

公开(公告)日：2014-08-07

申请号：US14247282

申请日：2014-04-08

Applicant: Infineon Technologies AG

Inventor： Joerg Ortner ,  Michael Sorger

IPC: H01L21/02

CPC classification number: B22D19/0072 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02 ,  H01L21/311 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02371 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0502 ,  H01L2224/06182 ,  H01L2224/06188 ,  H01L2224/94 ,  H01L2924/181 ,  H05K1/02 ,  H05K2201/09036 ,  H05K2203/0108 ,  H05K2203/308 ,  Y10S977/887 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, imprint material may be deposited at least into the trench, the imprint material in the trench may be embossed using a stamp device, and the stamp device may be removed from the trench.

Abstract translation: 在根据实施例的处理衬底的方法中，沟槽可以形成在衬底中，压印材料可以至少沉积到沟槽中，沟槽中的压印材料可以使用压印装置压印，并且印模 器件可以从沟槽中移除。

公开(公告)号：US20140106229A1

公开(公告)日：2014-04-17

申请号：US13653493

申请日：2012-10-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Joachim Hirschler ,  Magdalena Forster ,  Michael Sorger ,  Katharina Schmut ,  Bernhard Goller ,  Philemon Schweizer ,  Michael Sternad ,  Thomas Walter

IPC: H01M4/38 ,  H01M4/583 ,  H01M4/04 ,  H01M4/02

CPC classification number: H01M4/04 ,  H01M4/13 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/052 ,  H01M10/054 ,  H01M2004/021

Abstract: A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region.

Abstract translation: 根据各种实施例的电池电极可以包括：基板，其包括被配置为面向离子载体电解质的表面; 以及在所述表面的第一部分处的第一扩散变化区域，其中所述第一扩散变化区域被配置为改变由所述电解质携带的离子的扩散到所述衬底中，并且其中所述表面的第二部分没有所述第一扩散率变化 地区。