公开(公告)号：US20200294894A1

公开(公告)日：2020-09-17

申请号：US16354392

申请日：2019-03-15

Applicant: Infineon Technologies AG

Inventor： Rainer Pelzer ,  Fortunato Lopez ,  Antonia Maglangit ,  Siti Amira Faisha Shikh Zakaria

IPC: H01L23/495 ,  H01L23/532 ,  H01L21/48 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

公开(公告)号：US10658309B2

公开(公告)日：2020-05-19

申请号：US16418006

申请日：2019-05-21

Applicant: Infineon Technologies AG

Inventor： Marianne Mataln ,  Michael Nelhiebel ,  Rainer Pelzer ,  Bernhard Weidgans

IPC: H01L23/00 ,  H01L23/58 ,  B81B7/00

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

公开(公告)号：US20190273050A1

公开(公告)日：2019-09-05

申请号：US16418006

申请日：2019-05-21

Applicant: Infineon Technologies AG

Inventor： Marianne Mataln ,  Michael Nelhiebel ,  Rainer Pelzer ,  Bernhard Weidgans

IPC: H01L23/00

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

公开(公告)号：US20140151905A1

公开(公告)日：2014-06-05

申请号：US13693481

申请日：2012-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Michael Sternad ,  Rainer Pelzer

IPC: H01R43/02 ,  G02B19/00 ,  H01L23/498

CPC classification number: H01R43/02 ,  B23K26/22 ,  B23K2101/38 ,  G02B19/0028 ,  G02B19/0047 ,  H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/78263 ,  H01L2224/78301 ,  H01L2224/85039 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00

Abstract: A device includes a tube extending in a longitudinal direction and a hollow channel arranged in the tube. An end part of the tube is formed such that first electromagnetic radiation paths extending in the tube and outside of the hollow channel in the longitudinal direction are focused in a first focus.

Abstract translation: 一种装置包括沿纵向延伸的管和布置在管中的中空通道。 管的端部形成为使得沿着纵向方向在管中延伸到中空通道外部的第一电磁辐射路径被聚焦在第一焦点中。