THERMAL INTERFACE STRUCTURE FOR INTEGRATED CIRCUIT DEVICE ASSEMBLIES

    公开(公告)号:US20220384306A1

    公开(公告)日:2022-12-01

    申请号:US17330870

    申请日:2021-05-26

    Abstract: A thermal interface structure for facilitating heat transfer from an integrated circuit device to a heat dissipation device may be fabricated to include at least one conductive wire structure wherein each conductive wire structure includes a conductive wire having a first end, a first barrier layer adjacent the first end of the conductive wire, and a first solder structure adjacent the first barrier layer. The thermal interface structure may further include an encapsulation material substantially encapsulating each conductive wire structure and a first solder layer abutting the encapsulation material and abutting the first solder structure of each conductive wire structure.

    Integrated heat spreader with multiple channels for multichip packages

    公开(公告)号:US11444003B2

    公开(公告)日:2022-09-13

    申请号:US16144584

    申请日:2018-09-27

    Abstract: An integrated heat spreader includes channel structures assembled in a frame. Each channel structure is independent of the other, and can be used to dissipate heat from integrated circuitry at a specific location within a package, and without allowing heat from that particular location to propagate to integrated circuitry at other locations within the package. Each channel structure can be implemented with metal having a high thermal conductivity (e.g., copper). The channel structures can be used in conjunction with liquid-based cooling or air-based cooling. The frame can be implemented with low thermal conductivity molding compound or plastic so the heat transfer from one channel structure to another is inhibited. The channel structures can have different configurations (e.g., straight, pillars, and/or pin fins) to provide different rates of flow, mixing, and/or cooling. The flow direction of air or liquid for the channel structures can be the same (parallel) or different (counter).

    HYBRID BACKSIDE THERMAL STRUCTURES FOR ENHANCED IC PACKAGES

    公开(公告)号:US20210249375A1

    公开(公告)日:2021-08-12

    申请号:US16785014

    申请日:2020-02-07

    Abstract: An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

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