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公开(公告)号:US20210398906A1
公开(公告)日:2021-12-23
申请号:US16910023
申请日:2020-06-23
Applicant: Intel Corporation
Inventor: Zhiguo QIAN , Gerald PASDAST , Juan ZENG , Peipei WANG , Ahmad SIDDIQUI , Lakshmipriya SESHAN
IPC: H01L23/538 , H01L23/00
Abstract: Embodiments disclosed herein include multi-die packages with interconnects between the dies. In an embodiment, an electronic package comprises a package substrate, and a first die over the package substrate. In an embodiment, the first die comprises a first IO bump map, where bumps of the first IO bump map have a first pitch. In an embodiment, the electronic package further comprises a second die over the package substrate. In an embodiment, the second die comprises a second IO bump map, where bumps of the second IO bump map have a second pitch that is different than the first pitch. In an embodiment, the electronic package further comprises interconnects between the first IO bump map and the second IO bump map.
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公开(公告)号:US20190333848A1
公开(公告)日:2019-10-31
申请号:US16509387
申请日:2019-07-11
Applicant: Intel Corporation
Inventor: Zhiguo QIAN , Kemal AYGUN , Yu ZHANG
IPC: H01L23/498
Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for ground via clustering for crosstalk mitigation in integrated circuit (IC) assemblies. In some embodiments, an IC package assembly may include a first package substrate configured to route input/output (I/O) signals and ground between a die and a second package substrate. The first package substrate may include a plurality of contacts disposed on one side of the first package substrate and at least two ground vias of a same layer of vias, and the at least two ground vias may form a cluster of ground vias electrically coupled with an individual contact. Other embodiments may be described and/or claimed.
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公开(公告)号:US20190172778A1
公开(公告)日:2019-06-06
申请号:US16261475
申请日:2019-01-29
Applicant: INTEL CORPORATION
Inventor: Sanka GANESAN , Zhiguo QIAN , Robert L. SANKMAN , Krishna SRINIVASAN , Zhaohui ZHU
IPC: H01L23/498 , H01L23/00 , H01L21/768 , H01L23/50
Abstract: Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
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公开(公告)号:US20160284635A1
公开(公告)日:2016-09-29
申请号:US15174921
申请日:2016-06-06
Applicant: INTEL CORPORATION
Inventor: Sanka GANESAN , Zhiguo QIAN , Robert L. SANKMAN , Krishna SRINIVASAN , Zhaohui ZHU
IPC: H01L23/498 , H01L23/00 , H01L23/50
CPC classification number: H01L23/49811 , H01L21/76885 , H01L23/50 , H01L23/5386 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/10126 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/11849 , H01L2224/1301 , H01L2224/13013 , H01L2224/13014 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/13562 , H01L2224/1357 , H01L2224/13687 , H01L2224/14132 , H01L2224/14133 , H01L2224/14135 , H01L2224/14136 , H01L2224/16013 , H01L2224/16014 , H01L2224/16058 , H01L2224/16238 , H01L2224/1703 , H01L2224/17051 , H01L2224/81191 , H01L2224/81203 , H01L2224/81385 , H01L2224/81395 , H01L2224/81411 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81815 , H01L2924/05042 , H01L2924/1434 , H01L2924/381 , H01L2924/3841 , H01L2924/014 , H01L2924/00014
Abstract: Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
Abstract translation: 描述了包括形成互连结构的电子组件和方法。 在一个实施例中,一种装置包括半导体管芯和裸片上的第一金属凸块,第一金属凸块包括具有第一部分和第二部分的表面。 该设备还包括覆盖表面的第一部分并且使表面的第二部分未被覆盖的耐焊接涂层。 描述和要求保护其他实施例。
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公开(公告)号:US20240030143A1
公开(公告)日:2024-01-25
申请号:US18377183
申请日:2023-10-05
Applicant: Intel Corporation
Inventor: Kemal AYGUN , Zhiguo QIAN , Jianyong XIE
IPC: H01L23/538 , H01L21/48 , H01L23/48 , H01L23/498 , H01L23/31 , H01L23/00 , H01L23/522 , H01L23/532
CPC classification number: H01L23/5381 , H01L21/4846 , H01L23/481 , H01L23/49816 , H01L23/49838 , H01L21/486 , H01L23/3128 , H01L24/81 , H01L24/17 , H01L23/5226 , H01L24/13 , H01L23/53295 , H01L24/16 , H01L23/49822 , H01L2224/81 , H01L2924/181
Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.
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公开(公告)号:US20230138168A1
公开(公告)日:2023-05-04
申请号:US18089542
申请日:2022-12-27
Applicant: Intel Corporation
Inventor: Kemal AYGUN , Zhiguo QIAN , Jianyong XIE
IPC: H01L23/538 , H01L21/48 , H01L23/48 , H01L23/498 , H01L23/31 , H01L23/00 , H01L23/522 , H01L23/532
Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.
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公开(公告)号:US20220157706A1
公开(公告)日:2022-05-19
申请号:US17665315
申请日:2022-02-04
Applicant: Intel Corporation
Inventor: Sujit SHARAN , Kemal AYGUN , Zhiguo QIAN , Yidnekachew MEKONNEN , Zhichao ZHANG , Jianyong XIE
IPC: H01L23/498 , H01L23/00
Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, wherein the die comprises a plurality of high density features. An interconnect bridge is embedded in the substrate, wherein the interconnect bridge may comprise a first region disposed on a surface of the interconnect bridge comprising a first plurality of features, wherein the first plurality of features comprises a first pitch. A second region disposed on the surface of the interconnect bridge comprises a second plurality of features comprising a second pitch, wherein the second pitch is greater than the first pitch.
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公开(公告)号:US20200373232A1
公开(公告)日:2020-11-26
申请号:US16993112
申请日:2020-08-13
Applicant: Intel Corporation
Inventor: Zhiguo QIAN , Kaladhar RADHAKRISHNAN , Kemal AYGUN
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L21/68
Abstract: The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.
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19.
公开(公告)号:US20200343175A1
公开(公告)日:2020-10-29
申请号:US16392171
申请日:2019-04-23
Applicant: Intel Corporation
Inventor: Zhiguo QIAN , Gang DUAN , Kemal AYGÜN , Jieying KONG
IPC: H01L23/498 , H01L21/48 , H01L23/66
Abstract: Embodiments include package substrates and methods of forming the package substrates. A package substrate includes a first conductive layer in a first dielectric, a second dielectric over the first dielectric, and a second conductive layer in the second dielectric, where the second conductive layer includes first and second traces. The package substrate also includes a third conductive layer over the second dielectric, and a high dielectric constant (Dk) and low DK regions in the first and second dielectrics, where the high Dk region surrounds the first traces, and where the low Dk region surrounds the second traces. The high Dk region may be between the first and third conductive layers. The low Dk region may be between the first and third conductive layers. The package substrate may include a dielectric region in the first and second dielectrics, where the dielectric region separates the high Dk and low Dk regions.
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公开(公告)号:US20190295953A1
公开(公告)日:2019-09-26
申请号:US15933934
申请日:2018-03-23
Applicant: Intel Corporation
Inventor: Mayue XIE , Jong-Ru GUO , Zhiguo QIAN , Zuoguo WU
IPC: H01L23/538 , H01L23/58 , H01L25/065
Abstract: Apparatuses, systems and methods associated with integrated circuit packages with integrated test circuitry for testing of a channel between dies are disclosed herein. In embodiments, an integrated circuit (IC) package may include a first die, a second die, and a channel that couples the first die to the second die. The first die may include a transmitter, test circuitry coupled between the transmitter and the channel, wherein the test circuitry is to control charge and discharge of the channel, and a receiver coupled to the channel. The receiver may determine a voltage of the channel during charge and discharge of the channel, and output an indication of the voltage. Other embodiments may be described and/or claimed.
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