公开(公告)号：US20160079463A1

公开(公告)日：2016-03-17

申请号：US14946495

申请日：2015-11-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/077 ,  H01L31/0224

CPC classification number: H01L31/077 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/182 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

Abstract translation: 光伏器件包括具有第一掺杂剂导电性的结晶衬底，交叉指接触点和前表面场结构。 前表面场结构包括在衬底上形成的晶体层和在晶体层上形成的非结晶层。 晶体层和非结晶层掺杂有与衬底相同的掺杂剂导电性的掺杂剂。 还公开了方法。

公开(公告)号：US20150255666A1

公开(公告)日：2015-09-10

申请号：US14718916

申请日：2015-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20150243497A1

公开(公告)日：2015-08-27

申请号：US14707923

申请日：2015-05-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： WILFRIED E. HAENSCH ,  BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  TAK H. NING ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L21/02 ,  H01L21/225 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L29/66477 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/2257 ,  H01L21/265 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7841 ,  H01L29/78618 ,  H01L29/78621

Abstract: A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.

公开(公告)号：US20140227825A1

公开(公告)日：2014-08-14

申请号：US13967126

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/18

CPC classification number: H01L31/077 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/182 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

公开(公告)号：US20140170807A1

公开(公告)日：2014-06-19

申请号：US13718819

申请日：2012-12-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/18

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract translation: 一种用于制造具有集成光伏电池的器件的方法包括在第一处理衬底上支撑半导体衬底并掺杂半导体衬底以形成具有相反导电性的掺杂交替区域。 掺杂层形成在半导体衬底的第一侧上。 在掺杂层上图案化导电材料以形成导电岛，使得导电岛与交替区对准以限定在单片结构上串联连接的多个光伏电池。

公开(公告)号：US20180254361A1

公开(公告)日：2018-09-06

申请号：US15966864

申请日：2018-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/028 ,  H01L31/0747

CPC classification number: H01L31/0747 ,  H01L31/022458 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

公开(公告)号：US20160359068A1

公开(公告)日：2016-12-08

申请号：US15235216

申请日：2016-08-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0465 ,  H01L31/077 ,  H01L31/076 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0224

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20160020344A1

公开(公告)日：2016-01-21

申请号：US14867553

申请日：2015-09-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/028

CPC classification number: H01L31/022458 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

Abstract translation: 光电器件和方法包括结晶衬底和形成为与衬底接触的发射极接触部分。 背表面场结包括与晶体衬底接触形成的均匀结层，并且具有与衬底相同的导电类型和更高的有源掺杂密度。 均匀结层包括小于均匀结层中的少数载流子的扩散长度的厚度。 形成与与衬底相对的均匀接合层接触的钝化层，其不掺杂或具有与衬底相同的导电类型。

公开(公告)号：US20150318425A1

公开(公告)日：2015-11-05

申请号：US14796546

申请日：2015-07-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0475 ,  H01L31/05

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract translation: 一种用于制造具有集成光伏电池的器件的方法包括在第一处理衬底上支撑半导体衬底并掺杂半导体衬底以形成具有相反导电性的掺杂交替区域。 掺杂层形成在半导体衬底的第一侧上。 在掺杂层上图案化导电材料以形成导电岛，使得导电岛与交替区对准以限定在单片结构上串联连接的多个光伏电池。

公开(公告)号：US20150255574A1

公开(公告)日：2015-09-10

申请号：US14720328

申请日：2015-05-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： WILFRIED E. HAENSCH ,  BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  TAK H. NING ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/66477 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/2257 ,  H01L21/265 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7841 ,  H01L29/78618 ,  H01L29/78621

Abstract: A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.