MINIMIZATION OF BIAS TEMPERATURE INSTABILITY (BTI) DEGRADATION IN CIRCUITS
    11.
    发明申请
    MINIMIZATION OF BIAS TEMPERATURE INSTABILITY (BTI) DEGRADATION IN CIRCUITS 有权
    电路中偏置温度不稳定性(BTI)降低的最小化

    公开(公告)号:US20160164497A1

    公开(公告)日:2016-06-09

    申请号:US14560109

    申请日:2014-12-04

    CPC classification number: H03K3/011 H01L27/0266 H03K17/687 H03K19/00369

    Abstract: A circuit structure is provided. The circuit structure includes first pfet device. The circuit structure further includes a first nfet device connected to the pfet device. The circuit structure further includes a keeper nfet device that reduces stress associated with the first nfet device by keeping the first nfet device off during its functional state. The circuit structure further includes a keeper pfet device that reduces stress associated with the first pfet device by keeping the first pfet device off during its functional state.

    Abstract translation: 提供电路结构。 电路结构包括第一pfet器件。 电路结构还包括连接到pfet器件的第一nfet器件。 电路结构还包括保持器nfet器件,其通过在其功能状态期间保持第一nfet器件而关闭与第一nfet器件相关联的应力。 电路结构还包括保持器pfet装置,其通过在其功能状态期间保持第一pfet装置关闭来减少与第一pfet装置相关联的应力。

    SCOPED SEARCH ENGINE
    12.
    发明申请
    SCOPED SEARCH ENGINE 审中-公开
    SCOPED搜索引擎

    公开(公告)号:US20160140243A1

    公开(公告)日:2016-05-19

    申请号:US14546318

    申请日:2014-11-18

    CPC classification number: G06F16/9024 G06F16/2457 G06F16/35 G06F16/9535

    Abstract: A scoped search engine is disclosed. The scoped search engine includes a memory unit storing reference data records. The scoped search engine also includes a data comparison unit that searches the reference data records using different searches. The scoped search engine further includes a match analysis unit that combines result data from the different searches and determines a scope for a subsequent search based on the combined result data.

    Abstract translation: 公开了范围搜索引擎。 范围搜索引擎包括存储参考数据记录的存储单元。 范围搜索引擎还包括数据比较单元,其使用不同的搜索来搜索参考数据记录。 作用域搜索引擎还包括匹配分析单元,其合并来自不同搜索的结果数据,并且基于组合结果数据确定后续搜索的范围。

    IMPLEMENTING COMPUTATIONAL MEMORY FROM CONTENT-ADDRESSABLE MEMORY
    13.
    发明申请
    IMPLEMENTING COMPUTATIONAL MEMORY FROM CONTENT-ADDRESSABLE MEMORY 有权
    从内容可寻址的存储器中实现计算存储器

    公开(公告)号:US20140328103A1

    公开(公告)日:2014-11-06

    申请号:US13888108

    申请日:2013-05-06

    Inventor: Igor Arsovski

    Abstract: A content-addressable memory (CAM) with computational capability is described. The CAM includes an array of CAM cells arranged in rows and columns with a pair of search lines associated with each column of the array and a match line associated with each row of the array. The array of CAM cells is configured to implement, for a given cycle, either a read operation of data contained in a single selected column, or one of a plurality of different bitwise logical operations on data contained in multiple selected columns. All of the pairs of search lines in the columns of the array are configured to a certain state to implement the read operation or one of the plurality of different bitwise logical operations. A result of the read operation or one of the plurality of different bitwise logical operations is outputted onto all of the match lines in the array.

    Abstract translation: 描述了具有计算能力的内容寻址存储器(CAM)。 CAM包括以行和列布置的一系列CAM单元阵列,其中具有与阵列的每列相关联的一对搜索线以及与阵列的每一行相关联的匹配线。 CAM单元的阵列被配置为针对给定的周期对包含在单个选定列中的数据的读取操作或对包含在多个选定列中的数据的多个不同的按位逻辑运算中的一个执行。 阵列列中的所有搜索线对被配置为一定的状态以实现读取操作或多个不同的逐位逻辑运算中的一个。 将读取操作或多个不同的按位逻辑运算中的一个输出到阵列中的所有匹配线上。

    Customer-transparent logic redundancy for improved yield

    公开(公告)号:US11293980B2

    公开(公告)日:2022-04-05

    申请号:US17132820

    申请日:2020-12-23

    Abstract: Systems and methods are provided for implementing customer-transparent logic redundancy in scan chains for improved yield of integrated circuits. More specifically, an integrated circuit structure is provided for that includes a plurality of combined latch structures. Each of the combined latch structures includes an original latch and a redundant latch. The integrated circuit structure further includes a plurality of combined logic structures. Each of the combined logic structures includes an original logic structure a redundant logic structure. Each redundant latch is a duplicate of each respective original latch within a combined latch structure and each redundant logic structure is a duplicate of each respective original logic structure within a combined logic structure such that a two-fold library of latches and logic is provided for one or more scan chains of the integrated circuit structure.

    Stress balancing of circuits
    17.
    发明授权
    Stress balancing of circuits 有权
    电路的应力平衡

    公开(公告)号:US09472269B2

    公开(公告)日:2016-10-18

    申请号:US14178955

    申请日:2014-02-12

    CPC classification number: G11C11/419 G11C29/06

    Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

    Abstract translation: 应力平衡场效应晶体管的方法,系统和结构受到偏置温度不稳定性引起的阈值电压偏移。 一种方法包括通过偏移位置的位线电压来表征存储器阵列中的位置的疲劳。 该方法还包括基于特征确定位置不平衡。 此外,该方法包括反转位置的逻辑状态。 此外,该方法包括改变对应于该位置的反转指示符的值。

    PARTIAL UPDATE IN A TERNARY CONTENT ADDRESSABLE MEMORY
    19.
    发明申请
    PARTIAL UPDATE IN A TERNARY CONTENT ADDRESSABLE MEMORY 有权
    内部可寻址存储器中的部分更新

    公开(公告)号:US20150179262A1

    公开(公告)日:2015-06-25

    申请号:US14138374

    申请日:2013-12-23

    Abstract: A TCAM may have a plurality of rows of cells. Each row may have a match line. Each cell may have elements for storing first and second bits, and compare circuitry associated to determine matches between a bit of a search word and data stored in the cell. For at least one first row of the rows, the TCAM includes a valid row cell having at least one element to store a partial update indication. The valid row cell may cause the match line associated with the first row to signal that the first row does not match a search word when the partial update indication associated with the first row is enabled. When the partial update indication associated with the first row is disabled, the determination of matches with a search word is performed solely by the compare circuitry without influence of the valid row cell.

    Abstract translation: TCAM可以具有多行单元。 每行可能有一个匹配行。 每个小区可以具有用于存储第一和第二比特的元素,并且比较相关联的电路以确定搜索词的比特和存储在小区中的数据之间的匹配。 对于行的至少一行第一行,TCAM包括具有至少一个元素以存储部分更新指示的有效行单元。 当与第一行相关联的部分更新指示被启用时,有效行单元可能导致与第一行相关联的匹配行表示第一行与搜索词不匹配。 当与第一行相关联的部分更新指示被禁用时,与搜索字匹配的确定仅由比较电路执行而不影响有效行单元。

    PARTIAL UPDATE IN A TERNARY CONTENT ADDRESSABLE MEMORY
    20.
    发明申请
    PARTIAL UPDATE IN A TERNARY CONTENT ADDRESSABLE MEMORY 有权
    内部可寻址存储器中的部分更新

    公开(公告)号:US20150179261A1

    公开(公告)日:2015-06-25

    申请号:US14282298

    申请日:2014-05-20

    Abstract: A TCAM may have a plurality of rows of cells. Each row may have a match line. Each cell may have elements for storing first and second bits, and compare circuitry associated to determine matches between a bit of a search word and data stored in the cell. For at least one first row of the rows, the TCAM includes a valid row cell having at least one element to store a partial update indication. The valid row cell may cause the match line associated with the first row to signal that the first row does not match a search word when the partial update indication associated with the first row is enabled. When the partial update indication associated with the first row is disabled, the determination of matches with a search word is performed solely by the compare circuitry wi thout influence of the valid row cell.

    Abstract translation: TCAM可以具有多行单元。 每行可能有一个匹配行。 每个小区可以具有用于存储第一和第二比特的元素,并且比较相关联的电路以确定搜索词的比特和存储在小区中的数据之间的匹配。 对于行的至少一行第一行,TCAM包括具有至少一个元素以存储部分更新指示的有效行单元。 当与第一行相关联的部分更新指示被启用时,有效行单元可能导致与第一行相关联的匹配行表示第一行与搜索词不匹配。 当与第一行相关联的部分更新指示被禁用时,与搜索字的匹配的确定仅由比较电路执行有效行单元的影响。

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