公开(公告)号：US20160035511A1

公开(公告)日：2016-02-04

申请号：US14883825

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H11/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20140091407A1

公开(公告)日：2014-04-03

申请号：US14096350

申请日：2013-12-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H03H9/02 ,  G06F17/50

CPC classification number: H03H9/02007 ,  G06F17/5072 ,  H01L21/84 ,  H01L27/1203 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

Abstract translation: 公开了与CMOS工艺，制造方法和设计结构集成的体声波滤波器和/或体声波谐振器。 该方法包括形成至少一个包含非晶硅材料的光束并在非晶硅光束上并邻近非晶硅光束提供绝缘体材料。 该方法还包括通过绝缘体材料形成通孔并暴露非晶硅束下面的材料。 该方法还包括在通孔和非晶硅光束上提供牺牲材料。 该方法还包括在牺牲材料上并在绝缘体材料之上提供盖子。 该方法还包括通过盖子排出牺牲材料和下面的材料，以分别在非晶硅束的上方形成上腔，并在非晶硅束的下方形成下腔。

公开(公告)号：US20180065847A1

公开(公告)日：2018-03-08

申请号：US15807661

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first electrode, forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and a second electrode, and the first cantilevered electrode includes an arm with an extending protrusion which extends upward from an upper surface of the arm.

公开(公告)号：US20150249200A1

公开(公告)日：2015-09-03

申请号：US14713327

申请日：2015-05-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David L. HARAME ,  Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01L41/083 ,  H01L41/08

CPC classification number: H01L41/083 ,  G06F17/5068 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/081 ,  H01L41/094 ,  H01L41/332 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, are provided. The structure includes a single crystalline beam formed from a silicon layer of a silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in lower wafer bonded to an insulator layer of the SOI substrate, below the single crystalline beam and the insulator layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) in electrical connection with the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器。 该结构包括由绝缘体上硅（SOI）衬底的硅层形成的单晶束; 绝缘体材料涂覆单晶束; 形成在单晶束上方的上腔，超过绝缘体材料的一部分; 在下晶片上形成的下腔体，其结合到SOI衬底的绝缘体层，在单晶束和SOI衬底的绝缘体层之下; 连接通孔，其将上腔体连接到下腔体，连接通孔被绝缘体材料涂覆; 以及与单晶束电连接的体声波（BAW）滤波器或体声声谐振器（BAR）。

公开(公告)号：US20150041896A1

公开(公告)日：2015-02-12

申请号：US14523076

申请日：2014-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alan B. BOTULA ,  Alvin J. JOSEPH ,  Stephen E. LUCE ,  John J. PEKARIK ,  Yun SHI

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/7834 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/423 ,  H01L29/66575

Abstract: A semiconductor structure and method of manufacture and, more particularly, a field effect transistor that has a body contact and method of manufacturing the same is provided. The structure includes a device having a raised source region of a first conductivity type and an active region below the raised source region extending to a body of the device. The active region has a second conductivity type different than the first conductivity type. A contact region is in electric contact with the active region. The method includes forming a raised source region over an active region of a device and forming a contact region of a same conductivity type as the active region, wherein the active region forms a contact body between the contact region and a body of the device.

公开(公告)号：US20140015093A1

公开(公告)日：2014-01-16

申请号：US14030414

申请日：2013-09-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William F. CLARK, JR. ,  Stephen E. LUCE

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/13

Abstract: A semiconductor device including at least one capacitor formed in wiring levels on a silicon-on-insulator (SOI) substrate, wherein the at least one capacitor is coupled to an active layer of the SOI substrate. A method of fabricating a semiconductor structure includes forming an SOI substrate, forming a BOX layer over the SOI substrate, and forming at least one capacitor in wiring levels on the BOX layer, wherein the at least one capacitor is coupled to an active layer of the SOI substrate.

Abstract translation: 一种半导体器件，包括形成在绝缘体上硅（SOI）衬底上的布线层中的至少一个电容器，其中所述至少一个电容器耦合到所述SOI衬底的有源层。 制造半导体结构的方法包括形成SOI衬底，在SOI衬底上形成BOX层，以及在BOX层上形成布线层中的至少一个电容器，其中至少一个电容器耦合到 SOI衬底。

公开(公告)号：US20140008741A1

公开(公告)日：2014-01-09

申请号：US14024171

申请日：2013-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David L. HARAME ,  Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01L41/09 ,  G06F17/50 ,  H01L41/332

CPC classification number: H01L41/083 ,  G06F17/5068 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/081 ,  H01L41/094 ,  H01L41/332 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过绝缘体材料形成通孔。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法还包括在下晶片的沟槽中提供另外的牺牲材料。 该方法还包括在单晶束下将下晶片接合到绝缘体。 该方法还包括排出牺牲材料和另外的牺牲材料，以在单晶束之下形成单结晶束上方的上空腔和在单晶束下方的下腔。