摘要:
A double-conjugate maintaining optical system for maintaining the conjugate relation between an object and its image even if the distance between the object and the image varies and also maintaining another set of conjugate relation in a predetermined condition includes an afocal system comprising a plurality of lens units, a first positive lens unit disposed on the object side of the afocal system, and a second positive lens unit disposed on the image side of the afocal system. The first positive lens unit is movable relative to the second positive lens unit so that the object is positioned on the focal plane of the first positive lens unit opposite to the afocal system. The afocal system is movable along the optical axis thereof in a predetermined relation with the first positive lens unit.
摘要:
An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.
摘要:
A method for positioning an object with patterns being formed thereon, employs a first device for extracting first information relative to patterns in a first region on the object, a second device for extracting second information relative to patterns from a second region including the first region on the object, an operating circuit to calculate a degree of coincidence between the first information and the second information, and a detecting circuit for detecting a position of the first region in the second region, whereby the position of the object can be reproduced with high reproducibility in accordance with the position as detected.
摘要:
In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.
摘要:
A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.
摘要:
An apparatus for detecting a position of a semiconductor wafer comprises a linear alignment mark formed on a surface of the wafer along a pair of parallel straight lines extending in a given direction intersecting a radial direction of the wafer. The alignment mark includes at least two projection sections projected from the surface and spaced from each other in the given direction. Each of the projection sections has a first stepped edge provided on or along one of the pairs of straight lines and a second stepped edge provided on and along the other of the pair of straight lines, the pair of straight lines being separated from each other by a distance d', and each of the projection sections being defined such that the following relationship is satisfied:l'>d'where l' is the length of one of the projection sections in the given direction. A position of the alignment mark with respect to a direction intersecting the given direction is determined on the basis of light scattered by the first and second stepped edges.
摘要:
A projection optical apparatus for projecting the pattern of a mask onto a substrate through a projection optical system includes a stage for supporting thereon a substrate having a plurality of marks for detection on the surface thereof, first detecting means for detecting the amount of inclination of the surface of the substrate relative to the surface on which the pattern is projected and imaged, through the projection optical system, second detecting means for detecting the amount of inclination of the surface of the substrate relative to a predetermined reference plane independently of the projection optical system, and calibrating means for calibrating the amount of inclination detected by the second detecting means on the basis of the amount of inclination detected by the first detecting means.
摘要:
In an exposure apparatus for manufacturing semiconductor devices, a pattern on a photomask is aligned with a plurality of patterns formed on a wafer in a manner that detects and corrects misalignment, including, inter alia, rotational errors, not only between a photomask and a wafer, but also between a photomask and individual chips formed on the wafer, so that pattern matching is attained with very high accuracy. Apparatus for achieving this result employs different arrangements of alignment marks together with optical systems and positional adjustment devices.
摘要:
An apparatus for projecting the image of an object onto a substrate comprises light source means for supplying light energy for illuminating the object, optical means for forming the image of the object on the substrate, the image magnification of the optical means being heated and varied by the light energy from the light source means, means for monitoring the manner in which the light energy is applied to the optical means, means for determining the variation in the image magnification of the optical means in response to the monitor means, and means for adjusting the size of the image formed on the substrate in response to the determining means.
摘要:
A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.