公开(公告)号：US11963466B2

公开(公告)日：2024-04-16

申请号：US17330610

申请日：2021-05-26

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H10N70/20 ,  H10N70/00

CPC classification number: H10N70/253 ,  H10N70/066 ,  H10N70/823 ,  H10N70/8265 ,  H10N70/8613 ,  H10N70/231 ,  H10N70/8616 ,  H10N70/8828

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

公开(公告)号：US20240056072A1

公开(公告)日：2024-02-15

申请号：US18496262

申请日：2023-10-27

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Hans Taddiken

IPC: H03K17/56

CPC classification number: H03K17/56

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

公开(公告)号：US11730068B2

公开(公告)日：2023-08-15

申请号：US17350398

申请日：2021-06-17

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H10N70/00 ,  H01L23/66 ,  H10N70/20

CPC classification number: H10N70/011 ,  H01L23/66 ,  H10N70/231 ,  H10N70/823 ,  H10N70/8413 ,  H10N70/8828

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

公开(公告)号：US09029941B2

公开(公告)日：2015-05-12

申请号：US13949968

申请日：2013-07-24

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Markus Zundel ,  Christoph Kadow

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7827

Abstract: A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode.

Abstract translation: 垂直晶体管组件包括具有第一和第二表面的半导体本体，漂移区以及布置在漂移区和第一表面之间的源区和体区。 身体区域也布置在源区域和漂移区域之间。 垂直晶体管部件还包括邻近体区设置的栅极电极，布置在栅极电极和主体区域之间的栅极电介质，以及布置在漂移区域和第二表面之间的漏极区域。 源电极与源区电接触，与栅电极电绝缘并且布置在第一表面上。 漏电极与漏极区域电接触并设置在第二表面上。 栅极接触电极与半导体本体电绝缘，在半导体本体中延伸到第二表面，并与栅电极电连接。

公开(公告)号：US20140251408A1

公开(公告)日：2014-09-11

申请号：US14282886

申请日：2014-05-20

Applicant: Infineon Technologies AG

Inventor： Donald Dibra ,  Christoph Kadow ,  Markus Zundel

IPC: H01L35/32

CPC classification number: H01L35/32 ,  G01K1/08 ,  G01K7/02

Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

Abstract translation: 本发明的实施例涉及可以形成在半导体器件上的沟槽中的塞贝克温差传感器。 传感器的一部分可以被导电屏蔽件基本上包围。 可以包括多个结以提供更高的塞贝克传感器电压。 屏蔽可以电耦合到局部电位，或者电耦合到电浮置。 屏蔽的一部分可以形成为半导体器件形成的半导体衬底中的掺杂阱，或者形成为基本覆盖传感器的金属层。 屏蔽件可以形成为在传感器沟槽壁上的第一氧化物层，其中形成在第一氧化物层上的导电屏蔽层和形成在导电屏蔽上的第二氧化物层。 绝对温度传感器可以与塞贝克温差传感器串联耦合。

公开(公告)号：US12274076B2

公开(公告)日：2025-04-08

申请号：US18379423

申请日：2023-10-12

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

公开(公告)号：US20250089584A1

公开(公告)日：2025-03-13

申请号：US18953341

申请日：2024-11-20

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H10N70/00 ,  H10N70/20

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

公开(公告)号：US12156488B2

公开(公告)日：2024-11-26

申请号：US18086211

申请日：2022-12-21

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H10N70/00 ,  H10N70/20

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

公开(公告)号：US11863168B2

公开(公告)日：2024-01-02

申请号：US17870934

申请日：2022-07-22

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Hans Taddiken

IPC: H03K17/56

CPC classification number: H03K17/56

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

公开(公告)号：US09614033B2

公开(公告)日：2017-04-04

申请号：US14977393

申请日：2015-12-21

Applicant: Infineon Technologies AG

Inventor： Christoph Kadow ,  Till Schloesser

IPC: H01L29/06 ,  H01L21/78 ,  H01L21/762 ,  H01L29/78 ,  H01L21/308 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45

CPC classification number: H01L29/0649 ,  H01L21/308 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/78 ,  H01L29/045 ,  H01L29/06 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/1033 ,  H01L29/407 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/45 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/78

Abstract: An embodiment of a semiconductor device comprises a first load terminal contact area at a first side of a semiconductor body. A second load terminal contact area is at a second side of the semiconductor body opposite to the first side. A control terminal contact area is at the second side of the semiconductor body. An isolation structure extends through the semiconductor body between the first and second sides. The isolation structure electrically isolates a first part of the semiconductor body from a second part of the semiconductor body. A first thickness of the first part of the semiconductor body is smaller than a second thickness of the second part of the semiconductor body.