公开(公告)号：US20150203988A1

公开(公告)日：2015-07-23

申请号：US14160124

申请日：2014-01-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Nico Caspary ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/20

CPC classification number: C30B15/04 ,  C30B15/20 ,  C30B29/06

Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period.

Abstract translation: 硅锭的切克劳斯生长的方法包括在坩埚中熔化硅材料和n型掺杂剂材料的混合物。 在提取时间段内从熔融硅中提取硅锭。 在提取时间的至少一部分时间内将硼添加到熔融硅中。

公开(公告)号：US10910475B2

公开(公告)日：2021-02-02

申请号：US15189067

申请日：2016-06-22

Applicant: Infineon Technologies AG

Inventor： Nico Caspary ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  C30B15/00 ,  C30B29/06 ,  H01L29/16 ,  H01L29/167 ,  H01L29/739 ,  H01L29/66 ,  H01L29/861 ,  H01L29/78 ,  H01L29/08 ,  C30B15/04 ,  C30B15/20 ,  C30B33/00

Abstract: A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.

公开(公告)号：US10724148B2

公开(公告)日：2020-07-28

申请号：US14160124

申请日：2014-01-21

Applicant: Infineon Technologies AG

Inventor： Nico Caspary ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/20

Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period.

公开(公告)号：US20170316929A1

公开(公告)日：2017-11-02

申请号：US15650504

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Helmut Oefner ,  Nico Caspary ,  Mohammad Momeni ,  Reinhard Ploss ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66 ,  H01L21/18 ,  H01L21/28 ,  H01L21/322 ,  H01L21/225

CPC classification number: H01L29/7393 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/0201 ,  H01L21/02016 ,  H01L21/187 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/28238 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/76256 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.

公开(公告)号：US20160130722A1

公开(公告)日：2016-05-12

申请号：US14535416

申请日：2014-11-07

Applicant: Infineon Technologies AG

Inventor： Nico Caspary ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  C30B29/06 ,  C01B33/02 ,  C30B31/06

CPC classification number: C30B15/04 ,  C01B33/02 ,  C30B29/06

Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period.

Abstract translation: 硅锭的切克劳斯生长的方法包括在坩埚中熔化硅材料和n型掺杂剂材料的混合物。 在提取时间段期间，从熔融硅中提取硅锭。 在提取时间段的至少一个子周期期间，硅锭掺杂附加的n型掺杂剂材料。

公开(公告)号：US20150349066A1

公开(公告)日：2015-12-03

申请号：US14722591

申请日：2015-05-27

Applicant: Infineon Technologies AG

Inventor： Nico Caspary ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  C30B29/06 ,  H01L29/16 ,  C30B15/00

CPC classification number: H01L29/36 ,  C30B15/00 ,  C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  C30B33/00 ,  H01L29/0878 ,  H01L29/16 ,  H01L29/167 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/8611

Abstract: A CZ silicon ingot is doped with donors and acceptors and includes an axial gradient of doping concentration of the donors and of the acceptors. An electrically active net doping concentration, which is based on a difference between the doping concentrations of the donors and acceptors varies by less than 60% for at least 40% of an axial length of the CZ silicon ingot due to partial compensation of at least 20% of the doping concentration of the donors by the acceptors.

Abstract translation: CZ硅锭掺杂有供体和受体，并且包括供体和受体的掺杂浓度的轴向梯度。 基于供体和受体的掺杂浓度之间的差异的电活性净掺杂浓度由于至少20次的部分补偿而对CZ硅锭的至少40％的轴向长度变化小于60％ 由受体的供体的掺杂浓度的百分比。