公开(公告)号：US20220189892A1

公开(公告)日：2022-06-16

申请号：US17454120

申请日：2021-11-09

Applicant: Infineon Technologies AG

Inventor： Pietro BRENNER ,  Walter HARTNER ,  Julian Winfried KAISER ,  Saqib KALEEM

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/552 ,  H01L25/065

Abstract: A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.

公开(公告)号：US20160211189A1

公开(公告)日：2016-07-21

申请号：US14997596

申请日：2016-01-18

Applicant: Infineon Technologies AG

Inventor： Martin Richard NIESSNER ,  Walter HARTNER ,  Gerhard HAUBNER ,  Sebastian PAHLKE

IPC: H01L23/31 ,  H05K1/18 ,  H01L21/52 ,  H05K1/02 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L23/3128 ,  H01L21/52 ,  H01L21/563 ,  H01L23/145 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/66 ,  H01L24/20 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2924/18162 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K1/181

Abstract: A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.

Abstract translation: 一种用于承载封装的电子芯片的芯片载体，其中所述芯片载体包括形成为多个电绝缘结构和多个导电结构的堆叠的叠层结构，以及在所述层叠结构的暴露表面处的芯片耦合区域 被配置为电气和机械地耦合所述封装的电子芯片，其中所述电绝缘结构中的一个被配置为由与高频信号的低损耗传输兼容的材料制成的高频电介质，并且其中至少一个 电绝缘结构之一和导电结构中的一个被构造为用于缓冲热致机械载荷的热机械缓冲器。

公开(公告)号：US20250160219A1

公开(公告)日：2025-05-15

申请号：US18505701

申请日：2023-11-09

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Fabian MUTZBAUER

IPC: H10N59/00 ,  G01R33/00 ,  G01R33/09 ,  H01L23/00

Abstract: A chip-scale package includes a magnetic sensor integrated circuit (IC) and a conductive contact pad. The magnetic sensor IC includes an IC layer stack comprising a plurality of isolation layers and a plurality of conductive layers; and a magnetoresistive sensing element integrated in the IC layer stack. The magnetoresistive sensing element includes a reference layer having a fixed reference magnetization aligned with a magnetization axis, and a magnetic free layer having a magnetically free magnetization. The magnetically free magnetization is variable in a presence of an external magnetic field. The conductive contact pad is arranged on or integrated in the IC layer stack. Moreover, the conductive contact pad is arranged over the magnetoresistive sensing element such that the conductive contact pad and the magnetoresistive sensing element at least partially vertically overlap.

公开(公告)号：US20240030092A1

公开(公告)日：2024-01-25

申请号：US18351284

申请日：2023-07-12

Applicant: Infineon Technologies AG

Inventor： Tuncay ERDOEL ,  Walter HARTNER ,  Pietro BRENNER ,  Simon KORNPROBST ,  Martin MAYER

IPC: H01L23/373 ,  H01L23/552 ,  H01L23/31

CPC classification number: H01L23/373 ,  H01L23/552 ,  H01L23/3107

Abstract: A device includes a radio frequency chip and a heat sink arranged over the radio frequency chip. The device further includes a layer stack arranged between the radio frequency chip and the heat sink. The layer stack includes a first layer including a first material, a thermal interface material, and a metal layer arranged between the first material and the thermal interface material.

公开(公告)号：US20220199481A1

公开(公告)日：2022-06-23

申请号：US17542905

申请日：2021-12-06

Applicant: Infineon Technologies AG

Inventor： Raphael HELLWIG ,  Philip AMOS ,  Walter HARTNER

IPC: H01L23/34 ,  H01L23/498 ,  H01L23/552

Abstract: A circuit arrangement has a chip arrangement in the form of an embedded Wafer Level Ball Grid Array (eWLB) arrangement with solder contacts on one side and a thermal interface on a side of the chip arrangement facing away from the solder contacts which is designed to dissipate heat from the semiconductor chip. In examples, the thermal interface has a thermally and electrically conductive material, wherein in a top view of the chip arrangement, a contact area in which the thermally and electrically conductive material is in thermal contact with the chip arrangement is limited to the fan-out area. In examples, the thermal interface has at least one RF absorption layer which is designed to absorb electromagnetic radiation at an operating frequency of the semiconductor chip.

公开(公告)号：US20220181246A1

公开(公告)日：2022-06-09

申请号：US17456806

申请日：2021-11-29

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Francesca ARCIONI ,  Tuncay ERDOEL ,  Vincenzo FIORE ,  Helmut KOLLMANN ,  Arif RONI ,  Emanuele STAVAGNA ,  Christoph WAGNER

IPC: H01L23/498 ,  H01L23/66 ,  H01L23/552 ,  H01L23/00 ,  H01L23/528

Abstract: A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.

公开(公告)号：US20200321295A1

公开(公告)日：2020-10-08

申请号：US16841298

申请日：2020-04-06

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Francesca ARCIONI ,  Birgit HEBLER ,  Martin Richard NIESSNER ,  Claus WAECHTER ,  Maciej WOJNOWSKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.