利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.015 秒)

    COMMUNICATION DEVICE
    13.
    发明公开
    COMMUNICATION DEVICE 审中-公开

    公开(公告)号：US20230217595A1

    公开(公告)日：2023-07-06

    申请号：US18079007

    申请日：2022-12-12

    申请人： Innolux Corporation

    发明人： Tsung-Han Tsai ,  Yu-Chia Huang ,  Ying-Jen Chen ,  Jen-Hai Chi

    IPC分类号： H05K1/18

    CPC分类号： H05K1/181 ,  H05K2201/10166 ,  H05K2201/10272

    摘要： A communication device including a substrate, a gate drive circuit, and a first tunable unit is provided. The gate drive circuit is disposed on the substrate. The gate drive circuit includes a first thin-film transistor and is configured to output a gate drive signal. The first tunable unit is disposed on the substrate and is electrically connected to the gate drive circuit. The first tunable unit includes a first drive circuit and a first tunable component. The first drive circuit includes a first terminal and a second terminal, and the first terminal of the first drive circuit is configured to receive the gate drive signal. The first tunable component is electrically connected to the second terminal of the first drive circuit.

    MANUFACTURING METHOD OF ELECTRONIC DEVICE
    14.
    发明公开
    MANUFACTURING METHOD OF ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230170265A1

    公开(公告)日：2023-06-01

    申请号：US17976869

    申请日：2022-10-31

    申请人： Innolux Corporation

    发明人： Tsung-Han Tsai ,  Chandra Lius ,  Jen-Hai Chi

    IPC分类号： H01L21/66

    CPC分类号： H01L22/14 ,  H01L22/26 ,  H01L22/12

    摘要： A manufacturing method of an electronic device including following steps is provided. A tuning element substrate having a circuit layer disposed on a substrate and a plurality of tuning elements disposed on the circuit layer is provided. A reverse bias voltage or a forward bias voltage is applied to the tuning elements, so as to test a variation of an electrical property or a variation of an optical property of each of the tuning elements. The variation of the electrical property or the variation of the optical property of each of the tuning elements is analyzed. According to the manufacturing method, a reliable testing method of an electronic device may be provided.

    ELECTRONIC DEVICE
    15.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20220367370A1

    公开(公告)日：2022-11-17

    申请号：US17722412

    申请日：2022-04-18

    申请人： Innolux Corporation

    发明人： Jen-Hai Chi ,  Yun-Sheng Chen ,  Chia-Chi Ho

    IPC分类号： H01L23/538 ,  H01L25/16 ,  H01L23/367 ,  H01L23/498

    摘要： The disclosure provides an electronic device which includes a substrate structure, a driving component, and a conductive pattern. The driving component and the conductive pattern are formed on the substrate structure, and the thickness of the conductive pattern is greater than or equal to 0.5 μm and less than or equal to 15 μm.

    ELECTRONIC DEVICE
    19.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230299489A1

    公开(公告)日：2023-09-21

    申请号：US18172284

    申请日：2023-02-21

    申请人： Innolux Corporation

    发明人： Jen-Hai Chi ,  Chen-Lin Yeh ,  Chin-Lung Ting

    IPC分类号： H01Q9/04 ,  H01F27/28

    CPC分类号： H01Q9/0442 ,  H01F27/28

    摘要： An electronic device including a tuning element is provided. The tuning element includes a first capacitor element including a first switch and a first capacitor electrically coupled to the first switch and a second capacitor element including a second capacitor. The first capacitor element is electrically connected in parallel with the second capacitor element.

    COMMUNICATION DEVICE AND MANUFACTURING METHOD THEREOF
    20.
    发明公开
    COMMUNICATION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20230178534A1

    公开(公告)日：2023-06-08

    申请号：US17989682

    申请日：2022-11-18

    申请人： Innolux Corporation

    发明人： Jia-Sin Lin ,  Wen-Chi Fang ,  Jen-Hai Chi ,  Zhi-Fu Huang ,  Pei-Chi Chen ,  Wan-Chun Tsai

    IPC分类号： H01L25/18 ,  H01L29/786 ,  H01L29/93 ,  H01L25/00

    CPC分类号： H01L25/18 ,  H01L29/78678 ,  H01L29/78669 ,  H01L29/7869 ,  H01L29/93 ,  H01L25/50

    摘要： This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.