公开(公告)号：US20170110506A1

公开(公告)日：2017-04-20

申请号：US14883283

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen L. Brown ,  Guohan Hu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

公开(公告)号：US09537090B1

公开(公告)日：2017-01-03

申请号：US14749770

申请日：2015-06-25

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.

Abstract translation: 制造自旋转矩磁性随机存取存储器件（STT MRAM）器件的方法包括：在参考层上形成隧道势垒层; 在隧道势垒层上形成自由层，自由层包含钴铁硼（CoFeB）合金层和铁（Fe）层; 并进行溅射工艺以在Fe层上形成金属氧化物层。

公开(公告)号：US20160380188A1

公开(公告)日：2016-12-29

申请号：US14749770

申请日：2015-06-25

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.

Abstract translation: 制造自旋转矩磁性随机存取存储器件（STT MRAM）器件的方法包括：在参考层上形成隧道势垒层; 在隧道势垒层上形成自由层，自由层包含钴铁硼（CoFeB）合金层和铁（Fe）层; 并进行溅射工艺以在Fe层上形成金属氧化物层。

公开(公告)号：US09484531B2

公开(公告)日：2016-11-01

申请号：US14744137

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

Abstract translation: 磁性材料包括在相对的铁层之间的钴层。 铁层包括铁并且是体心立方（BCC），钴层包括钴并且是BCC或非晶体，并且磁性材料具有垂直磁各向异性（PMA）。

公开(公告)号：US09431600B2

公开(公告)日：2016-08-30

申请号：US14506798

申请日：2014-10-06

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11B5/33

CPC classification number: H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

Abstract translation: 一种器件包括种子层，设置在种子层上的磁道层，设置在磁道层上的合金层，设置在合金层上的隧道势垒层，设置在隧道势垒层上的钉扎层，合成反铁磁性 设置在钉扎层上的层间隔层，设置在合成反铁磁间隔层上的钉扎层和设置在钉扎层上的反铁磁层，另一装置包括种子层，设置在种子层上的反铁磁层，被钉扎层设置在 反铁磁层，设置在被钉扎层上的合成反铁磁层间隔物，设置在合成反铁磁层间隔物上的钉扎层，设置在钉扎层上的隧道势垒层，设置在隧道势垒层上的合金层和磁道层 放置在合金层上。

公开(公告)号：US20160099404A1

公开(公告)日：2016-04-07

申请号：US14506798

申请日：2014-10-06

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

Abstract translation: 一种器件包括种子层，设置在种子层上的磁道层，设置在磁道层上的合金层，设置在合金层上的隧道势垒层，设置在隧道势垒层上的钉扎层，合成反铁磁性 设置在钉扎层上的层间隔层，设置在合成反铁磁间隔层上的钉扎层和设置在钉扎层上的反铁磁层，另一装置包括种子层，设置在种子层上的反铁磁层，被钉扎层设置在 反铁磁层，设置在被钉扎层上的合成反铁磁层间隔物，设置在合成反铁磁层间隔物上的钉扎层，设置在钉扎层上的隧道势垒层，设置在隧道势垒层上的合金层和磁道层 放置在合金层上。

公开(公告)号：US09059399B2

公开(公告)日：2015-06-16

申请号：US13911602

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L29/82 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A mechanism is provided for a spin torque transfer random access memory device. A reference layer is disposed on a seed layer. A tunnel barrier is disposed on the reference layer. A free layer is disposed on the tunnel barrier. A cap layer is disposed on the free layer. The free layer includes a magnetic layer and a metal oxide layer, in which the magnetic layer is disposed on the tunnel barrier and the metal oxide layer is disposed on the magnetic layer. A metal material used in the metal oxide layer includes at least one of Ti, Ta, Ru, Hf, Al, La, and any combination thereof.

Abstract translation: 提供了一种用于自旋转矩传递随机存取存储器件的机构。 参考层设置在种子层上。 隧道势垒设置在参考层上。 自由层设置在隧道屏障上。 盖层设置在自由层上。 自由层包括磁性层和金属氧化物层，其中磁性层设置在隧道势垒上，金属氧化物层设置在磁性层上。 用于金属氧化物层的金属材料包括Ti，Ta，Ru，Hf，Al，La中的至少一种及其任何组合。

公开(公告)号：US20140363569A1

公开(公告)日：2014-12-11

申请号：US13933280

申请日：2013-07-02

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel Worledge

IPC: G11B5/84

CPC classification number: G11B5/8404 ,  G11B5/62 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/12

Abstract: A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.

公开(公告)号：US20240196755A1

公开(公告)日：2024-06-13

申请号：US18064261

申请日：2022-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Matthias Georg Gottwald ,  Guohan Hu ,  Stephen L. Brown ,  Alexander Reznicek

IPC: H10N50/01 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

公开(公告)号：US11264559B2

公开(公告)日：2022-03-01

申请号：US16262396

申请日：2019-01-30

Applicant: International Business Machines Corporation

Inventor： Daniel Worledge ,  Guohan Hu

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer is composed of a M1/M2 superlattice structure or a M1/M2 multilayer structure, wherein M1 is a first magnetic metal selected from the group consisting of cobalt (Co), iron (Fe) and alloys thereof, and M2 is a second magnetic metal selected from the group consisting of platinum (Pt), palladium (Pd), nickel (Ni), rhodium (Rh), iridium (Jr), rhenium (Re) and alloys thereof.