公开(公告)号：US20170162380A1

公开(公告)日：2017-06-08

申请号：US15397092

申请日：2017-01-03

申请人： International Business Machines Corporation

发明人： Joy Cheng ,  Michael A. Guillorn ,  Chi-Chun Liu ,  Hsinyu Tsai

IPC分类号： H01L21/027

CPC分类号： H01L21/0271 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

摘要： After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

公开(公告)号：US09582631B2

公开(公告)日：2017-02-28

申请号：US14750742

申请日：2015-06-25

申请人： International Business Machines Corporation

发明人： Michael A. Guillorn ,  Kafai Lai ,  Melih Ozlem ,  Hsinyu Tsai

IPC分类号： G06F17/50

CPC分类号： G06F17/5072 ,  G03F7/0002 ,  G06F17/5068 ,  G06F2217/12 ,  H01L27/0886 ,  Y02P90/265

摘要： A method for design template pattern optimization, comprises receiving a design for a fin field effect transistor (FinFET) device, wherein the design includes a configuration of fins, creating a design template pattern for the design for use in connection with directed self-assembly (DSA) patterning using graphoepitaxy, and optimizing the design template pattern to minimize pattern density gradients, wherein the design template pattern includes a plurality of guiding lines for guiding a block-copolymer deposited during the DSA patterning and the optimizing comprises altering the guiding lines.

摘要翻译： 一种用于设计模板图案优化的方法，包括接收鳍状场效应晶体管（FinFET）器件的设计，其中所述设计包括翅片的构造，为所述设计创建用于与定向自组装结合使用的设计模板图案（ DSA），并且优化设计模板图案以最小化图案密度梯度，其中设计模板图案包括用于引导在DSA图案化期间沉积的嵌段共聚物的多条引导线，并且优化包括改变引导线。

公开(公告)号：US09576817B1

公开(公告)日：2017-02-21

申请号：US14957835

申请日：2015-12-03

申请人： International Business Machines Corporation

发明人： Joy Cheng ,  Michael A. Guillorn ,  Chi-Chun Liu ,  Hsinyu Tsai

IPC分类号： H01L21/311 ,  H01L21/027

CPC分类号： H01L21/0271 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

摘要： After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

摘要翻译： 在使用侧壁图像转印工艺在硬掩模层上形成间隔物之后，在硬掩模层的未被间隔物覆盖的部分上形成中性材料层。 间隔物和中性材料层引导嵌段共聚物材料的自组装。 嵌段共聚物材料的微相分离提供了嵌段共聚物材料的交替畴的薄片结构。

公开(公告)号：US09337033B1

公开(公告)日：2016-05-10

申请号：US14945456

申请日：2015-11-19

申请人： International Business Machines Corporation

发明人： Martin Glodde ,  Wu-Song Huang ,  Hiroyuki Miyazoe ,  Ratnam Sooriyakumaran ,  Hsinyu Tsai

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  G03F7/09 ,  G03F7/075

CPC分类号： H01L21/0332 ,  C23C18/00 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  H01L21/0337 ,  H01L21/31144

摘要： A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.

公开(公告)号：US10037398B2

公开(公告)日：2018-07-31

申请号：US15134551

申请日：2016-04-21

申请人： International Business Machines Corporation

发明人： Markus Brink ,  Joy Cheng ,  Gregory S. Doerk ,  Michael A. Guillorn ,  Kafai Lai ,  Hsinyu Tsai

IPC分类号： G06F17/50 ,  H01L21/027

CPC分类号： G06F17/5077 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337

摘要： A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

公开(公告)号：US09911603B2

公开(公告)日：2018-03-06

申请号：US15397092

申请日：2017-01-03

申请人： International Business Machines Corporation

发明人： Joy Cheng ,  Michael A. Guillorn ,  Chi-Chun Liu ,  Hsinyu Tsai

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/768 ,  C08L53/00 ,  G03F7/00 ,  G03F1/00

CPC分类号： H01L21/0271 ,  B81C2201/0198 ,  C08L53/00 ,  C08L53/005 ,  G03F1/00 ,  G03F7/0002 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816

摘要： After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.

公开(公告)号：US09881793B2

公开(公告)日：2018-01-30

申请号：US14806921

申请日：2015-07-23

申请人： International Business Machines Corporation

发明人： Sebastian U. Engelmann ,  Mahmoud Khojasteh ,  Deborah A. Neumayer ,  John Papalia ,  Hsinyu Tsai

IPC分类号： B44C1/22 ,  H01L21/033 ,  B81C1/00 ,  G03F7/09 ,  G03F7/00

CPC分类号： H01L21/0337 ,  B81C1/00396 ,  G03F7/0002 ,  G03F7/094

摘要： A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A neutral hard mask layer is formed on the top of the organic planarization layer. The neutral hard mask layer is neutral to the block copolymers used for direct self-assembly. A plurality of template etch stacks are then formed on top of the neutral hard mask layer. After formation of the template etch stacks, neutrality recovery is performed on the neutral hard mask layer and the top portions of the template etch stacks, the vertical sidewalls of the template etch stacks being substantially unaffected by the neutrality recovery. A template for DSA is thus obtained.

公开(公告)号：US20170344691A1

公开(公告)日：2017-11-30

申请号：US15134551

申请日：2016-04-21

申请人： International Business Machines Corporation

发明人： Markus Brink ,  Joy Cheng ,  Gregory S. Doerk ,  Michael A. Guillorn ,  Kafai Lai ,  Hsinyu Tsai

IPC分类号： G06F17/50 ,  H01L21/027

CPC分类号： G06F17/5077 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337

摘要： A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

公开(公告)号：US09558310B2

公开(公告)日：2017-01-31

申请号：US14723570

申请日：2015-05-28

申请人： International Business Machines Corporation

发明人： Michael A. Guillorn ,  Kafai Lai ,  Melih Ozlem ,  Hsinyu Tsai

IPC分类号： G06F17/50 ,  H01L27/088

CPC分类号： G06F17/5072 ,  G03F7/0002 ,  G06F17/5068 ,  G06F2217/12 ,  H01L27/0886 ,  Y02P90/265

摘要： A method for design template pattern optimization, comprises receiving a design for a fin field effect transistor (FinFET) device, wherein the design includes a configuration of fins, creating a design template pattern for the design for use in connection with directed self-assembly (DSA) patterning using graphoepitaxy, and optimizing the design template pattern to minimize pattern density gradients, wherein the design template pattern includes a plurality of guiding lines for guiding a block-copolymer deposited during the DSA patterning and the optimizing comprises altering the guiding lines.

公开(公告)号：US20160126097A1

公开(公告)日：2016-05-05

申请号：US14945456

申请日：2015-11-19

申请人： International Business Machines Corporation

发明人： Martin Glodde ,  Wu-Song Huang ,  Hiroyuki Miyazoe ,  Ratnam Sooriyakumaran ,  Hsinyu Tsai

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  C23C18/00 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  H01L21/0337 ,  H01L21/31144

摘要： A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.

摘要翻译： 提供了通过使用旋涂钛 - 硅（TiSi）聚合物或低聚物作为色调反转材料来将具有低于30nm间距和15nm临界尺寸的线空间图案的硬掩模材料图案化的工艺。 旋涂TiSi材料被旋涂在包括从基于DSA的工艺生成的第一图案的图案化的OPL上。 旋涂TiSi材料通过去除对旋涂TiSi材料选择性的图案化OPL，填充图案化的OPL内的沟槽以形成色调反转图案。 反转图案是与第一图案的互补图案，并且通过各向异性蚀刻转移到下面的硬掩模材料中。