摘要:
Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.
摘要:
A ceramic filter is provided, including a base body having partition walls made of a ceramic porous body and defining cells, filter membranes provided on the partition walls which are made of a ceramic porous body having an average pore diameter smaller than that of the surface of each partition wall, and a glass seal provided to cover at least the end face of the base body. The glass seal includes an alkali-free glass containing silica (SiO2) in an amount of 55 to 65 mol %, zirconia (ZrO2) in an amount of 1 to 10 mol % and at least one kind of alkaline earth metal oxide selected from calcia, baria and strontia, but which does not substantially contain zinc oxide.
摘要:
A ceramic filter is provided including a substrate, a separation layer comprising titania and having an average pore size in a range of 0.08 to 1 μm and a thickness in a range of 5 to 20 μm, and an intermediate layer formed between the substrate and the separation layer. The intermediate layer includes aggregate particles that are bonded together with glass frits, and aggregate particles of the intermediate layer are smaller than aggregate particles of the substrate and larger than aggregate particles of the separation layer.
摘要:
A hydrogen preparing apparatus is disclosed which reforms a hydrocarbon and/or a hydrocarbon containing an oxygen atom to obtain a hydrogen-containing gas and separates hydrogen from this hydrogen-containing gas. The apparatus includes a porous substrate and a hydrogen separating film which is formed on a predetermined surface portion of the porous substrate and which selectively separates hydrogen, a reforming catalyst for reforming the hydrocarbon being supported in the pores of the porous substrate. A reforming catalyst for reforming the hydrocarbon is supported on a honeycomb carrier, and the hydrogen separating film is arranged on the downstream side of the honeycomb carrier. The surface area of the catalyst per unit volume of the apparatus can be increased, whereby the apparatus can be miniaturized. A hydrogen separating efficiency can also be improved. The hydrogen manufacturing apparatus can be prevented from being damaged by a difference of expansion between the porous substrate and the container.
摘要:
A metal oxide semiconductor element is arranged in a measuring chamber in which an atmosphere is introduced. A resistance of the metal oxide semiconductor element is varied corresponding to a concentration of a specific gas component. An oxygen pump, having a solid-electrolyte element with an oxygen ion transmitting property and a pair of electrodes arranged on both sides of the solid-electrolyte element, is provided. One electrode of the oxygen pump is arranged in the measuring chamber. The measuring chamber is communicated with the atmosphere through a hole as a gas diffusion resistant means. A resistance of the metal oxide semiconductor element is measured when the metal oxide semiconductor element is exposed in the atmosphere so as to obtain a concentration of a specific gas component, while an oxygen partial pressure in the measuring chamber is controlled by the oxygen pump.
摘要:
A multilayered packaging material having good piercing resistance and tearability and being excellent in appearance, transparency and so forth, can be produced by orienting multilayered structure which is composed of a polyamide resin layer and other thermoplastic resin layer(s) at a monoaxially stretching ratio of 1.5- to 7.0-fold in such a manner that the thickness of the polyamide resin layer is 3 to 30 .mu.m and the thickness(es) of the other thermoplastic resin layer(s) is (are) at least twice as much as that of the polyamide resin layer.
摘要:
Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicone carbide effectivley promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.
摘要:
Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicon carbide effectively promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.
摘要:
A beta alumina sintered body having no tantalum component in an intergranular phase is manufactured by mixing raw materials consisting essentially of 8.0-10.0 wt % of sodium oxide, 3.0-5.5 wt % of magnesium oxide and/or 0.1-2.0 wt % of lithium oxide, 0.01-0.5 wt % of tantalum oxide, and the remainder of aluminum oxide to obtain raw material powders; forming the raw material powders to obtain a formed body; and sintering the formed body.
摘要:
A silicon nitride sintered member including a silicon nitride sintered body and a dense silicon nitride coating layer covering the surface of the silicon nitride sintered body. An intergranular phase of the silicon nitride sintered body is substantially composed of crystals.