Cleaning composition, method for producing semiconductor device, and cleaning method
    11.
    发明授权
    Cleaning composition, method for producing semiconductor device, and cleaning method 有权
    清洗组合物,半导体装置的制造方法以及清洗方法

    公开(公告)号:US08617417B2

    公开(公告)日:2013-12-31

    申请号:US13107199

    申请日:2011-05-13

    IPC分类号: C09K13/00

    摘要: Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.

    摘要翻译: 本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物,半导体器件的制造方法和清洁方法 使用清洁组合物。 用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物,以及使用该清洁组合物的半导体器件的制备方法和清洁方法,其中所述清洁组合物包含(组分a)水; (组分b)胺化合物; (组分c)羟胺和/或其盐; (组分d)季铵化合物; (组分e)有机酸; 和(组分f)水溶性有机溶剂; pH为6〜9。

    Apparatus and method for measuring concentrations of gas components
    15.
    发明授权
    Apparatus and method for measuring concentrations of gas components 失效
    用于测量气体组分浓度的装置和方法

    公开(公告)号:US5602326A

    公开(公告)日:1997-02-11

    申请号:US546542

    申请日:1995-10-20

    摘要: A metal oxide semiconductor element is arranged in a measuring chamber in which an atmosphere is introduced. A resistance of the metal oxide semiconductor element is varied corresponding to a concentration of a specific gas component. An oxygen pump, having a solid-electrolyte element with an oxygen ion transmitting property and a pair of electrodes arranged on both sides of the solid-electrolyte element, is provided. One electrode of the oxygen pump is arranged in the measuring chamber. The measuring chamber is communicated with the atmosphere through a hole as a gas diffusion resistant means. A resistance of the metal oxide semiconductor element is measured when the metal oxide semiconductor element is exposed in the atmosphere so as to obtain a concentration of a specific gas component, while an oxygen partial pressure in the measuring chamber is controlled by the oxygen pump.

    摘要翻译: 金属氧化物半导体元件布置在其中引入气氛的测量室中。 金属氧化物半导体元件的电阻根据特定气体成分的浓度而变化。 提供了具有氧离子透过性的固体电解质元件和布置在固体电解质元件两侧的一对电极的氧气泵。 氧气泵的一个电极设置在测量室中。 测量室通过作为气体扩散阻挡装置的孔与大气连通。 当金属氧化物半导体元件在大气中暴露以获得特定气体成分的浓度,同时测量室中的氧分压由氧气泵控制​​时,测量金属氧化物半导体元件的电阻。

    Method of manufacturing silicon nitride sintered bodies
    17.
    发明授权
    Method of manufacturing silicon nitride sintered bodies 失效
    制造氮化硅烧结体的方法

    公开(公告)号:US5238882A

    公开(公告)日:1993-08-24

    申请号:US894640

    申请日:1992-06-05

    IPC分类号: C04B35/584 C04B35/593

    CPC分类号: C04B35/5935 C04B35/584

    摘要: Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicone carbide effectivley promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.

    摘要翻译: 公开了在其中含有碳化硅并且其中氮化硅颗粒之间的晶间相基本上结晶的氮化硅烧结体。 此外,公开了烧结体的制造方法,其中在制备原料粉末时使用碳化硅粉末原料作为添加剂,并且在烧制之后的温度下降阶段期间晶间相结晶。 有机碳化物有利于促进烧结体的结构的致密化和晶间相的结晶化,从而可以提供具有很少的玻璃相的晶间相的烧结体,并且具有优异的高温强度。

    Silicon nitride sintered bodies
    18.
    发明授权
    Silicon nitride sintered bodies 失效
    硅酸盐烧结体

    公开(公告)号:US5177038A

    公开(公告)日:1993-01-05

    申请号:US521567

    申请日:1990-05-10

    IPC分类号: C04B35/584 C04B35/593

    CPC分类号: C04B35/5935 C04B35/584

    摘要: Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicon carbide effectively promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.

    Beta alumina sintered body and method of manufacturing the same
    19.
    发明授权
    Beta alumina sintered body and method of manufacturing the same 失效
    β型氧化铝烧结体及其制造方法

    公开(公告)号:US5137853A

    公开(公告)日:1992-08-11

    申请号:US740096

    申请日:1991-08-05

    IPC分类号: C04B35/113

    CPC分类号: C04B35/113

    摘要: A beta alumina sintered body having no tantalum component in an intergranular phase is manufactured by mixing raw materials consisting essentially of 8.0-10.0 wt % of sodium oxide, 3.0-5.5 wt % of magnesium oxide and/or 0.1-2.0 wt % of lithium oxide, 0.01-0.5 wt % of tantalum oxide, and the remainder of aluminum oxide to obtain raw material powders; forming the raw material powders to obtain a formed body; and sintering the formed body.

    摘要翻译: 通过混合基本上由8.0-10.0重量%的氧化钠,3.0-5.5重量%的氧化镁和/或0.1-2.0重量%的氧化锂组成的原料来制造晶间相中没有钽成分的β氧化铝烧结体 ,0.01-0.5重量%的氧化钽,剩余的氧化铝得到原料粉末; 形成原料粉末以获得成形体; 并烧结成形体。

    Silicon nitride sintered members
    20.
    发明授权
    Silicon nitride sintered members 失效
    氮化硅烧结体

    公开(公告)号:US4940680A

    公开(公告)日:1990-07-10

    申请号:US247373

    申请日:1988-09-21

    IPC分类号: C04B35/584 C04B35/593

    CPC分类号: C04B35/593 C04B35/584

    摘要: A silicon nitride sintered member including a silicon nitride sintered body and a dense silicon nitride coating layer covering the surface of the silicon nitride sintered body. An intergranular phase of the silicon nitride sintered body is substantially composed of crystals.