公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20130130179A1

公开(公告)日：2013-05-23

申请号：US13739375

申请日：2013-01-11

Applicant: JSR CORPORATION

Inventor： Yusuke ANNO ,  Takashi MORI ,  Satoshi DEI ,  Kazunori TAKANASHI ,  Yushi MATSUMURA ,  Shin-ya MINEGISHI

IPC: G03F7/075

CPC classification number: G03F7/0757 ,  C08K5/34 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/20 ,  H01L21/02126 ,  H01L21/02216 ,  C08L83/04

Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。

公开(公告)号：US20130101942A1

公开(公告)日：2013-04-25

申请号：US13630245

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Hiromitsu TANAKA ,  Kazunori TAKANASHI ,  Shinya MINEGISHI ,  Takashi MORI ,  Tomoaki SEKO ,  Jyunya SUZUKI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/325

Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Abstract translation: 一种抗蚀剂图案形成方法，其能够形成在多层抗蚀剂工艺中用有机溶剂显影的情况下图案抗塌陷性优异的抗蚀剂图案。 该方法具有以下步骤：（1）使用形成抗蚀剂下层膜的组合物在基板上形成抗蚀剂下层膜; （2）使用光致抗蚀剂组合物在抗蚀剂下层膜上提供抗蚀剂膜; （3）曝光抗蚀膜; （4）使用含有不少于80质量％的有机溶剂的显影剂溶液显影曝光的抗蚀剂膜，其中形成抗蚀剂下层膜的组合物含有（A）包含聚硅氧烷链的组分，并且具有 羧基，可以通过酸，酸酐基或其组合产生羧基的基团。