COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD
    4.
    发明申请
    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD 有权
    用于形成图案的组合物和形成图案的方法

    公开(公告)号:US20150323870A1

    公开(公告)日:2015-11-12

    申请号:US14702139

    申请日:2015-05-01

    申请人: JSR CORPORATION

    IPC分类号: G03F7/20 G03F7/16 C08F293/00

    摘要: A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R′ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.

    摘要翻译: 用于图案形成的组合物包括嵌段共聚物。 嵌段聚合物包括在嵌段共聚物的主链末端的第一不稳定基团。 第一个易酸性基团能够被酸或热解离。 组合物优选还包含在施加能量时产生酸的酸发生剂。 嵌段共聚物优选能够通过定向自组装形成相分离结构。 第一不稳定基团优选由式(a)表示。 R表示碳原子数1〜20的1价有机基团。 R'表示氢原子或碳原子数1〜20的1价有机基团。 和*表示与嵌段共聚物主链末端的原子的结合位点。

    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD
    5.
    发明申请
    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD 审中-公开
    用于形成图案的组合物和形成图案的方法

    公开(公告)号:US20150253671A1

    公开(公告)日:2015-09-10

    申请号:US14638610

    申请日:2015-03-04

    申请人: JSR CORPORATION

    IPC分类号: G03F7/20 G03F7/038

    摘要: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes a crosslinkable group in a side chain thereof. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

    摘要翻译: 用于图案形成的组合物包括聚合物或包含多种聚合物的聚合物组。 聚合物或聚合物组能够通过定向自组装形成相分离结构。 聚合物组中的聚合物或至少一种聚合物包含其侧链中的可交联基团。 图案形成方法包括使用该组合物在衬底上提供定向的自组装膜。 定向自组装膜包括相分离结构。

    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD
    6.
    发明申请
    COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD 审中-公开
    用于形成图案的组合物和形成图案的方法

    公开(公告)号:US20150253663A1

    公开(公告)日:2015-09-10

    申请号:US14638521

    申请日:2015-03-04

    申请人: JSR CORPORATION

    IPC分类号: G03F7/038 G03F7/20

    CPC分类号: G03F7/0397 G03F7/0002

    摘要: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers, and an acid generator. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes an acid-labile group in a side chain thereof. The acid generator generates an acid upon application of energy. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

    摘要翻译: 用于图案形成的组合物包括聚合物或包含多种聚合物的聚合物组和酸产生剂。 聚合物或聚合物组能够通过定向自组装形成相分离结构。 聚合物组中的聚合物或至少一种聚合物包括侧链中的酸不稳定基团。 酸发生器在施加能量时产生酸。 图案形成方法包括使用该组合物在衬底上提供定向的自组装膜。 定向自组装膜包括相分离结构。

    RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD

    公开(公告)号:US20190354010A1

    公开(公告)日:2019-11-21

    申请号:US16519420

    申请日:2019-07-23

    申请人: JSR CORPORATION

    摘要: A radiation-sensitive composition contains: a metal oxide having a first structural unit represented by formula (1), formula (2) or a combination thereof, and a second structural unit represented by formula (3); and a solvent. In the formulae (1) to (3), M1, M2 and M3 each independently represent germanium, tin or lead; and R1, R2 and R3 each independently represent a monovalent organic group having 1 to 40 carbon atoms which bonds to M1 or M2 via a carbon atom. A proportion of the first structural unit with respect to total structural units constituting the metal oxide is preferably no less than 50 mol %.