利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.031 秒)

    BEOL compatible FET structrure
    12.
    发明授权
    BEOL compatible FET structrure 有权
    BEOL兼容FET结构

    公开(公告)号：US08569803B2

    公开(公告)日：2013-10-29

    申请号：US13572742

    申请日：2012-08-13

    申请人： Christy S. Tyberg ,  Katherine L. Saenger ,  Jack O. Chu ,  Harold J. Hovel ,  Robert L. Wisnieff ,  Kerry Bernstein ,  Stephen W. Bedell

    发明人： Christy S. Tyberg ,  Katherine L. Saenger ,  Jack O. Chu ,  Harold J. Hovel ,  Robert L. Wisnieff ,  Kerry Bernstein ,  Stephen W. Bedell

    IPC分类号： H01L29/76

    CPC分类号： H01L23/5226 ,  H01L23/53271 ,  H01L27/124 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.

    摘要翻译： 本发明提供了用于在线路后端（BEOL）互连结构中并入薄膜晶体管的结构和制造工艺。 所描述的结构和制造工艺与BEOL互连结构的处理要求相兼容。 结构和制造工艺利用已经并入到互连布线层中的现有处理步骤和材料，以便降低与在这些层级中引入薄膜晶体管相关联的附加成本。 与现有技术的3D集成方法相比，该结构能够实现多层次的垂直（3D）集成，具有改进的可制造性和可靠性。

    Graphene nanoribbons, method of fabrication and their use in electronic devices
    13.
    发明授权
    Graphene nanoribbons, method of fabrication and their use in electronic devices 有权
    石墨烯纳米带，其制造方法及其在电子设备中的应用

    公开(公告)号：US08361853B2

    公开(公告)日：2013-01-29

    申请号：US12902620

    申请日：2010-10-12

    申请人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

    发明人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

    IPC分类号： H01L29/06 ,  H01L21/336

    CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/78684

    摘要： The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons may comprise hydrogenated graphene, i.e., graphane, fluorinated graphene, or fluorographene. The semiconductor structure mentioned above can be formed by selectively converting portions of an initial graphene layer into alternating insulating ribbons, while the non-converted portions of the initial graphene form the alternating graphene nanoribbons. Semiconductor devices such as, for example, field effect transistors, can be formed atop the semiconductor structure provided in the present disclosure.

    摘要翻译： 本公开提供了一种半导体结构，其包括由交替的绝缘带分开的交替的石墨烯纳米带的纳米带层。 交替的石墨烯纳米带平行于下面的基底的表面，并且在一些实施方案中可以沿着基底的结晶方向取向。 交替的绝缘带可以包括氢化石墨烯，即塔帕尼，氟化石墨烯或荧光荧光物质。 上述半导体结构可以通过将初始石墨烯层的部分选择性地转换为交替绝缘带而形成，而初始石墨烯的未转化部分形成交替的石墨烯纳米带。 诸如场效应晶体管的半导体器件可以形成在本公开中提供的半导体结构的顶部。

    GRAPHENE NANORIBBONS, METHOD OF FABRICATION AND THEIR USE IN ELECTRONIC DEVICES
    14.
    发明申请
    GRAPHENE NANORIBBONS, METHOD OF FABRICATION AND THEIR USE IN ELECTRONIC DEVICES 有权
    石墨纳米纤维，制造方法及其在电子设备中的应用

    公开(公告)号：US20120085991A1

    公开(公告)日：2012-04-12

    申请号：US12902620

    申请日：2010-10-12

    申请人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

    发明人： Guy Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Robert L. Wisnieff

    IPC分类号： H01L29/66 ,  H01L21/04 ,  B82Y99/00

    CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/78684

    摘要： The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons may comprise hydrogenated graphene, i.e., graphane, fluorinated graphene, or fluorographene. The semiconductor structure mentioned above can be formed by selectively converting portions of an initial graphene layer into alternating insulating ribbons, while the non-converted portions of the initial graphene form the alternating graphene nanoribbons. Semiconductor devices such as, for example, field effect transistors, can be formed atop the semiconductor structure provided in the present disclosure.

    摘要翻译： 本公开提供了一种半导体结构，其包括由交替的绝缘带分开的交替的石墨烯纳米带的纳米带层。 交替的石墨烯纳米带平行于下面的基底的表面，并且在一些实施方案中可以沿着基底的结晶方向取向。 交替的绝缘带可以包括氢化石墨烯，即塔帕尼，氟化石墨烯或荧光荧光物质。 上述半导体结构可以通过将初始石墨烯层的部分选择性地转换为交替绝缘带而形成，而初始石墨烯的未转化部分形成交替的石墨烯纳米带。 诸如场效应晶体管的半导体器件可以形成在本公开中提供的半导体结构的顶部。

    Liquid Crystal Integrated Circuit And Method To Fabricate Same
    15.
    发明申请
    Liquid Crystal Integrated Circuit And Method To Fabricate Same 有权
    液晶集成电路及其制作方法

    公开(公告)号：US20130321753A1

    公开(公告)日：2013-12-05

    申请号：US13482438

    申请日：2012-05-29

    申请人： Minhua Lu ,  Quinghuang Lin ,  Robert L. Wisnieff

    发明人： Minhua Lu ,  Quinghuang Lin ,  Robert L. Wisnieff

    IPC分类号： G02F1/1343 ,  B05D3/02 ,  B05D5/12

    CPC分类号： G02F1/134363 ,  G02F1/133707 ,  G02F1/134336 ,  G02F1/13439

    摘要： A structure includes a first substrate having a first surface and a second substrate having a second surface facing the first surface; liquid crystal material disposed between the first and second surfaces; a first upstanding electrode disposed over the first surface and extending into the liquid crystal material towards the second surface; and a first planar electrode disposed upon the first surface and electrically connected with the first upstanding electrode. The first planar electrode at least partially surrounds the first upstanding electrode. A combination of the first upstanding electrode and the first planar electrode forms at least a portion of a pixel of a liquid crystal display. Various methods to fabricate the structure are also disclosed.

    摘要翻译： 一种结构包括具有第一表面的第一基底和具有面向第一表面的第二表面的第二基底; 设置在第一和第二表面之间的液晶材料; 第一直立电极，设置在第一表面上并延伸到液晶材料朝向第二表面; 以及设置在所述第一表面上并与所述第一直立电极电连接的第一平面电极。 第一平面电极至少部分地围绕第一直立电极。 第一直立电极和第一平面电极的组合形成液晶显示器的像素的至少一部分。 还公开了制造结构的各种方法。

    Dosimeter powered by passive RF absorption
    17.
    发明授权
    Dosimeter powered by passive RF absorption 有权
    剂量计由被动射频吸收提供动力

    公开(公告)号：US08212218B2

    公开(公告)日：2012-07-03

    申请号：US12627076

    申请日：2009-11-30

    申请人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    发明人： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    IPC分类号： G01T1/02

    CPC分类号： G01T1/026

    摘要： A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

    摘要翻译： 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

    Varying capacitance voltage contrast structures to determine defect resistance
    18.
    发明授权
    Varying capacitance voltage contrast structures to determine defect resistance 有权
    改变电容电压对比结构以确定缺陷电阻

    公开(公告)号：US07927895B1

    公开(公告)日：2011-04-19

    申请号：US12574118

    申请日：2009-10-06

    申请人： Christian Lavoie ,  Conal E. Murray ,  Oliver D. Patterson ,  Robert L. Wisnieff

    发明人： Christian Lavoie ,  Conal E. Murray ,  Oliver D. Patterson ,  Robert L. Wisnieff

    IPC分类号： H01L21/00

    CPC分类号： H01L22/20 ,  G01R31/2884 ,  G01R31/307 ,  H01L22/12 ,  H01L22/14 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for determining resistances of defects in a test structure, comprising: forming a first layer of the test structure having elements under test; generating a first e-beam image of the first layer, the first e-beam image graphically identifying defects detected at the first layer, each defect at the first layer having a corresponding grey scale level; adding capacitance to the structure by forming a metal layer of the structure; generating a second e-beam image of the metal layer, the second e-beam image graphically identifying defects detected at the metal layer, each defect at the metal layer having a corresponding grey scale level; generating a pattern of grey scale levels for each defect based on the corresponding grey scale level of each defect at each layer of the test structure; and determining a resistive range of each defect based on the pattern of grey scale levels generated for each defect.

    摘要翻译： 一种确定测试结构中的缺陷电阻的方法，包括：形成具有被测元件的测试结构的第一层; 产生第一层的第一电子束图像，第一电子束图像以图形方式识别在第一层处检测到的缺陷，第一层处的每个缺陷具有相应的灰度级; 通过形成结构的金属层向结构增加电容; 产生所述金属层的第二电子束图像，所述第二电子束图像以图形方式识别在所述金属层处检测到的缺陷，所述金属层处的每个缺陷具有相应的灰度级; 基于测试结构的每个层处的每个缺陷的相应灰度级产生针对每个缺陷的灰度级的图案; 以及基于为每个缺陷生成的灰度级的图案来确定每个缺陷的电阻范围。

    VARYING CAPACITANCE VOLTAGE CONTRAST STRUCTURES TO DETERMINE DEFECT RESISTANCE
    19.
    发明申请
    VARYING CAPACITANCE VOLTAGE CONTRAST STRUCTURES TO DETERMINE DEFECT RESISTANCE 有权
    改变电容电压对比结构以确定缺陷电阻

    公开(公告)号：US20110080180A1

    公开(公告)日：2011-04-07

    申请号：US12574118

    申请日：2009-10-06

    申请人： Christian Lavoie ,  Conal E. Murray ,  Oliver D. Patterson ,  Robert L. Wisnieff

    发明人： Christian Lavoie ,  Conal E. Murray ,  Oliver D. Patterson ,  Robert L. Wisnieff

    IPC分类号： G01R27/26 ,  H01H31/12

    CPC分类号： H01L22/20 ,  G01R31/2884 ,  G01R31/307 ,  H01L22/12 ,  H01L22/14 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for determining resistances of defects in a test structure, comprising: forming a first layer of the test structure having elements under test; generating a first e-beam image of the first layer, the first e-beam image graphically identifying defects detected at the first layer, each defect at the first layer having a corresponding grey scale level; adding capacitance to the structure by forming a metal layer of the structure; generating a second e-beam image of the metal layer, the second e-beam image graphically identifying defects detected at the metal layer, each defect at the metal layer having a corresponding grey scale level; generating a pattern of grey scale levels for each defect based on the corresponding grey scale level of each defect at each layer of the test structure; and determining a resistive range of each defect based on the pattern of grey scale levels generated for each defect.

    摘要翻译： 一种确定测试结构中的缺陷电阻的方法，包括：形成具有被测元件的测试结构的第一层; 产生第一层的第一电子束图像，第一电子束图像以图形方式识别在第一层处检测到的缺陷，第一层处的每个缺陷具有相应的灰度级; 通过形成结构的金属层向结构增加电容; 产生所述金属层的第二电子束图像，所述第二电子束图像以图形方式识别在所述金属层处检测到的缺陷，所述金属层处的每个缺陷具有相应的灰度级; 基于测试结构的每个层处的每个缺陷的相应灰度级产生针对每个缺陷的灰度级的图案; 以及基于为每个缺陷生成的灰度级的图案来确定每个缺陷的电阻范围。