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11.发明授权Organosilicon precursors for interlayer dielectric films with low dielectric constants 有权具有低介电常数的层间绝缘膜的有机硅前体公开(公告)号：US06583048B2
公开(公告)日：2003-06-24
申请号：US09944042
申请日：2001-08-31
申请人： Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
发明人： Jean Louise Vincent , Mark Leonard O'Neill , Howard Paul Withers, Jr. , Scott Edward Beck , Raymond Nicholas Vrtis
IPC分类号： H01L214763
CPC分类号： B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633
摘要： A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
摘要翻译： 在基板上形成低介电常数层间电介质膜的方法，在足以将该膜沉积在基板上的化学气相沉积条件下反应含有甲硅烷基醚，甲硅烷基醚低聚物或含有一个的有机硅化合物的有机硅前体 或更多的反应性基团，以形成介电常数为3.5或更小的层间绝缘膜。 由上述方法形成的薄膜。
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公开(公告)号：US20130068013A1
公开(公告)日：2013-03-21
申请号：US13235261
申请日：2011-09-16
申请人： Scott Edward Beck , Yong-Fa Wang
发明人： Scott Edward Beck , Yong-Fa Wang
CPC分类号： G01F1/00 , G01F1/68 , G01F1/6845 , G01F1/69 , G01F1/692 , H01L21/02 , H01L21/28518 , H01L27/1203
摘要： A sensing element having an integrally formed metal-silicide layer with a silicon layer is described. In some instances, the thickness of the metal-silicide layer can be controlled during fabrication such that the sensing element has a desired resistivity and/or a near linear thermal coefficient of resistance (TCR).
摘要翻译： 描述了具有整体形成的具有硅层的金属硅化物层的感测元件。 在一些情况下，可以在制造期间控制金属硅化物层的厚度，使得感测元件具有期望的电阻率和/或近似线性的热电阻系数（TCR）。
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13.发明授权Flow sensor apparatus and method with media isolated electrical connections 有权具有介质隔离电气连接的流量传感器装置和方法公开(公告)号：US08033180B2
公开(公告)日：2011-10-11
申请号：US12779657
申请日：2010-05-13
IPC分类号： G01L7/00
CPC分类号： G01L19/0023 , G01F1/363 , G01F1/48 , Y10T29/49002 , Y10T29/49826
摘要： A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.
摘要翻译： 一种使用具有介质隔离电气连接的压力传感器的流量传感器装置。 盖可以通过隔膜连接到压力传感器的顶部，以保护接合垫和引线接合与流体介质。 可以在盖上蚀刻流动通道，其开口和出口在盖的侧面上，使得液体可以流过流动通道。 入口和出口可以连接到通道的开口和出口，以允许流体流过隔膜。 流动通道在膜片的部分上产生较大的压力，这增加了膜片的偏转，这增加了压力传感器的输出信号。 可以在压力传感器和盖子的两侧上形成V形槽，以形成流体进出盖体腔体的通道。
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公开(公告)号：US20100018324A1
公开(公告)日：2010-01-28
申请号：US12180070
申请日：2008-07-25
IPC分类号： G01F1/38
摘要： A volumetric fluid flow sensor (100) includes a flow channel (120) for flowing a fluid therein; and a diaphragm (110) having an outer surface within the flow channel (120). The diaphragm (110) includes at least one flow disrupting feature mechanically coupled to or emerging from the outer surface of the diaphragm (110). A sensing structure (126) is coupled to the diaphragm (110) for generating a sensing signal responsive to a pressure signal on the diaphragm (110).
摘要翻译： 体积流体流量传感器（100）包括用于在其中流动流体的流动通道（120） 以及在所述流动通道（120）内具有外表面的隔膜（110）。 隔膜（110）包括至少一个机械耦合到隔膜（110）的外表面或从隔膜的外表面出来的流动干扰特征。 感测结构（126）耦合到隔膜（110），用于响应于隔膜（110）上的压力信号产生感测信号。
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公开(公告)号：US20110252882A1
公开(公告)日：2011-10-20
申请号：US12762797
申请日：2010-04-19
CPC分类号： G01F1/6845 , G01F15/14 , Y10T29/49002
摘要： A robust sensor, such as a robust flow sensor or pressure sensor, is provided. In one illustrative embodiment, a robust flow sensor includes one or more flow sensor components secured relative to a membrane, and a substrate for supporting the membrane. In some cases, the one or more flow sensor components may be substantially thermally isolated from the substrate by the membrane. One or more wire bond pads may be situated adjacent to a first side of the substrate and may be provided for communicating signals relative to the one or more flow sensor components. A top cap may be situated adjacent to the first side of the substrate and secured relative to the substrate. The top cap may define at least part of a fluid inlet and/or an outlet of the flow sensor assembly, and may at least partially define a flow channel that extends from the inlet, past at least one of the one or more flow sensor components, and out the outlet of the flow sensor assembly. The top cap may be structured and attached relative to the first side of the substrate such that the one or more wire bond pads are not exposed to a fluid in the flow channel, but are accessible for electrical connection to an external device. While a flow sensor is used as an example, it is contemplated that any suitable sensor may be used, as desired.
摘要翻译： 提供鲁棒的传感器，例如鲁棒的流量传感器或压力传感器。 在一个说明性实施例中，坚固的流量传感器包括相对于膜固定的一个或多个流量传感器部件和用于支撑膜的基板。 在一些情况下，一个或多个流量传感器组件可以通过膜与衬底基本上热隔离。 一个或多个引线接合焊盘可以位于与衬底的第一侧相邻的位置，并且可被设置用于相对于一个或多个流量传感器部件传送信号。 顶盖可以位于邻近衬底的第一侧并相对于衬底固定。 顶盖可以限定流量传感器组件的流体入口和/或出口的至少一部分，并且可以至少部分地限定从入口延伸通过一个或多个流量传感器部件中的至少一个的流动通道 ，并从流量传感器组件的出口排出。 顶盖可以相对于基板的第一侧被构造和附接，使得一个或多个引线接合焊盘不暴露于流动通道中的流体，而是可访问以用于与外部设备的电连接。 虽然使用流量传感器作为示例，但是可以设想，可以根据需要使用任何合适的传感器。
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16.发明授权Flow sensor apparatus and method with media isolated electrical connections 有权具有介质隔离电气连接的流量传感器装置和方法公开(公告)号：US07765872B2
公开(公告)日：2010-08-03
申请号：US12273912
申请日：2008-11-19
IPC分类号： G01L7/00
CPC分类号： G01L19/0023 , G01F1/363 , G01F1/48 , Y10T29/49002 , Y10T29/49826
摘要： A flow sensor apparatus that utilizes a pressure sensor with media isolated electrical connections. A cap can be attached to topside of the pressure sensor over a diaphragm to protect bond pads and wire bonds from a fluid media. A flow channel can be etched on the cap with an opening and exit on the sides of the cap so that liquid can flow through the flow channel. An inlet port and an outlet port can be attached to the channel's opening and exit to allow for fluid flow over the diaphragm. The flow channel creates a larger pressure over portions of the diaphragm that increases the deflection of the diaphragm, which increases an output signal of the pressure sensor. V-grooves can be created on two sides of the pressure sensor and in the cap to create the channel for the fluid in and out of the cap's cavity.
摘要翻译： 一种使用具有介质隔离电气连接的压力传感器的流量传感器装置。 盖可以通过隔膜连接到压力传感器的顶部，以保护接合垫和引线接合与流体介质。 可以在盖上蚀刻流动通道，其开口和出口在盖的侧面上，使得液体可以流过流动通道。 入口和出口可以连接到通道的开口和出口，以允许流体流过隔膜。 流动通道在膜片的部分上产生较大的压力，这增加了膜片的偏转，这增加了压力传感器的输出信号。 可以在压力传感器和盖子的两侧上形成V形槽，以形成流体进出盖体腔体的通道。
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公开(公告)号：US07278309B2
公开(公告)日：2007-10-09
申请号：US11366653
申请日：2006-03-01
申请人： Anthony M. Dmytriw , Wayne T. Kilian , Jamie W. Speldrich , Scott Edward Beck , Gilberto Morales , Richard William Gehman
发明人： Anthony M. Dmytriw , Wayne T. Kilian , Jamie W. Speldrich , Scott Edward Beck , Gilberto Morales , Richard William Gehman
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/688
摘要： A sensor apparatus includes a heating element comprising an upstream side and a downstream side. A first heat sensing set is generally configured adjacent to the upstream side of the heating element and comprises a first sensing element and a second sensing element, the first and second sensing elements configured in a serpentine, interdigitated pattern. A second heat sensing set can be configured adjacent to the downstream side of the heating element and comprises a third sensing element and a fourth sensing element, the third and fourth sensing elements configured in a serpentine, interdigitated pattern.
摘要翻译： 传感器装置包括加热元件，该加热元件包括上游侧和下游侧。 第一感测组件通常配置成与加热元件的上游侧相邻，并且包括第一感测元件和第二感测元件，第一和第二感测元件被构造成蛇形，交错图案。 第二感测组可以被配置成与加热元件的下游侧相邻，并且包括第三感测元件和第四感测元件，第三和第四感测元件被构造成蛇形，叉指形式。
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18.发明授权Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch 失效在气相牺牲氧化物蚀刻期间去除金属和氧化硅的方法公开(公告)号：US06534413B1
公开(公告)日：2003-03-18
申请号：US09698467
申请日：2000-10-27
IPC分类号： H01L21302
CPC分类号： H01L21/02049 , B81C1/00936 , H01L21/31116
摘要： A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.
摘要翻译： 提供了在单个芯片上集成微机械装置和微电子器件的制造期间从硅表面去除牺牲材料和金属污染的方法，其包括以下步骤：使用反应室将芯片的温度调节到适于 选择β-二酮和微机电和微电子器件的设计，使用惰性气体循环清洗室以除去大气气体和痕量的水，将HF和β-二酮作为反应混合物引入反应室，其中 包含至少一个要蚀刻的基底，使反应混合物流过基底，直到牺牲材料和金属污染被基本上除去，停止反应混合物的流动; 并循环清洗室以除去残留的反应性混合物和任何剩余的反应副产物。 任选地，氧化剂气体可以加入到反应混合物中以促进金属物质的氧化。
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公开(公告)号：US06509266B1
公开(公告)日：2003-01-21
申请号：US09824455
申请日：2001-04-02
IPC分类号： H01L2144
CPC分类号： H01L21/76864 , H01L21/28556 , H01L21/76838 , H01L21/76858 , H01L21/76871 , H01L21/76877 , Y10T428/1266 , Y10T428/12903 , Y10T428/3154 , Y10T428/31663
摘要： A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and Hl. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.
摘要翻译： 描述了通过铜前体的化学气相沉积在基板表面上沉积铜膜的工艺。 该方法包括用粘合促进剂处理扩散阻挡层表面和/或沉积膜并将铜膜退火至基底。 合适的粘合促进剂包括例如有机卤化物，例如二氯甲烷，双原子氯，双原子溴，双原子碘，HCl，HBr和H1。 本发明的方法提供铜基膜，其中铜基膜的织构主要为（111）。 这样的膜提供了在（111）膜下面的扩散阻挡层和覆盖（111）膜的铜之间具有增强的粘附性的衬底。
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公开(公告)号：US6159859A
公开(公告)日：2000-12-12
申请号：US93975
申请日：1998-06-09
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02049
摘要： The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a .beta.-diketone and a .beta.-diketoimine of the formula: ##STR1##
摘要翻译： 本发明是用于从用于制造半导体器件的类型的衬底的表面热，气相去除氧化硅和含金属的污染物的方法，包括在升高的温度下使衬底接触，所述高温适于产生和 保持有效量的清洗试剂以形成氧化硅和含金属污染物的挥发性副产物，并从表面除去挥发性副产物，其中清洗试剂是氟化氢和含氧气体的络合物 选自三氟乙酸，三氟乙酸酐，1,2-丙二酮，β-二酮和下式的β-二酮亚胺中的一种或多种的化合物：
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