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11.发明授权公开(公告)号：US08355099B2
公开(公告)日：2013-01-15
申请号：US12635349
申请日：2009-12-10
IPC分类号： G02F1/1333
CPC分类号： G02F1/23 , G02F2203/10 , G02F2203/34
摘要： A plasmonic display device is provided with liquid crystal dipole molecule control. The device is made from a first set of electrodes including at least one electrically conductive top electrode and at least one electrically conductive bottom electrode capable of generating a first electric field in a first direction. A second set of electrodes, including an electrically conductive right electrode and an electrically conductive left electrode, is capable of generating a second electric field in a second first direction. A dielectric layer overlies the bottom electrode, made from a liquid crystal material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the first and second set of electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer.
摘要翻译： 具有液晶偶极子分子控制的等离子体显示装置。 该装置由第一组电极制成，其包括至少一个导电顶电极和能够沿第一方向产生第一电场的至少一个导电底电极。 包括导电右电极和导电左电极的第二组电极能够在第二第一方向上产生第二电场。 电介质层覆盖在液晶材料制成的底部电极上，分子具有响应于电场的偶极子。 包括多个离散等离子体激元的等离子体激元层介于第一和第二组电极之间并与电介质层接触。 在一个方面，等离子体激元层嵌入电介质层。
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12.发明授权Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device 失效半导体纳米颗粒嵌入绝缘膜发光装置的制造公开(公告)号：US08349745B2
公开(公告)日：2013-01-08
申请号：US12267698
申请日：2008-11-10
IPC分类号： H01L21/31
CPC分类号： C23C16/30 , C23C16/5096 , C23C16/56
摘要： A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.
摘要翻译： 提供一种用于制造用于短波长发光应用的半导体纳米颗粒嵌入式Si绝缘膜的方法。 该方法提供底部电极，并沉积包含覆盖底部电极的N，O或C元素的半导体纳米颗粒嵌入的Si绝缘膜。 在退火之后，半导体纳米颗粒嵌入的Si绝缘膜在475至750纳米的波长范围内具有峰值光致发光（PL）。
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13.发明授权Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device 有权半导体纳米颗粒嵌入式绝缘膜电致发光器件的制造公开(公告)号：US08007332B2
公开(公告)日：2011-08-30
申请号：US12187605
申请日：2008-08-07
IPC分类号： H01J9/24
CPC分类号： C23C16/30 , C23C16/24 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/0214 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608 , H01L33/18
摘要： A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm2) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cm2 at an applied electric field lower than 3 MV/cm.
摘要翻译： 提供了一种用于制造用于电致发光（EL）应用的半导体纳米颗粒嵌入的Si绝缘膜的方法。 该方法提供底部电极，并且沉积半导体纳米颗粒嵌入的Si绝缘膜，其包括选自N和C组成的组的元素，覆盖在底部电极上。 在退火之后，形成半导体纳米颗粒嵌入的Si绝缘膜，其消光系数（k）在0.01〜1.0的范围内，在大约632纳米（nm）测量，电流密度（J）大于1安培 在施加的电场低于3MV / cm下的平方厘米（A / cm 2）。 在另一方面，被退火的半导体纳米颗粒嵌入的Si绝缘膜的折射率（n）在632nm处测量的范围为1.8-3.0，在施加的电场下的电流密度大于1A / cm 2 低于3 MV / cm。
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14.发明申请Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Electroluminescence Device 有权半导体纳米颗粒嵌入式绝缘膜电致发光器件的制造公开(公告)号：US20090115311A1
公开(公告)日：2009-05-07
申请号：US12187605
申请日：2008-08-07
CPC分类号： C23C16/30 , C23C16/24 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/0214 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608 , H01L33/18
摘要： A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm2) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cm2 at an applied electric field lower than 3 MV/cm.
摘要翻译： 提供了一种用于制造用于电致发光（EL）应用的半导体纳米颗粒嵌入的Si绝缘膜的方法。 该方法提供底部电极，并且沉积半导体纳米颗粒嵌入的Si绝缘膜，其包括选自N和C组成的组的元素，覆盖在底部电极上。 在退火之后，形成半导体纳米颗粒嵌入的Si绝缘膜，其消光系数（k）在0.01〜1.0的范围内，在大约632纳米（nm）测量，电流密度（J）大于1安培 在施加的电场低于3MV / cm下的平方厘米（A / cm 2）。 在另一方面，被退火的半导体纳米颗粒嵌入的Si绝缘膜的折射率（n）在632nm处测量的范围为1.8-3.0，在施加的电场下的电流密度大于1A / cm 2 低于3 MV / cm。
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公开(公告)号：US08947333B2
公开(公告)日：2015-02-03
申请号：US13173343
申请日：2011-06-30
IPC分类号： G09G3/36
CPC分类号： G02F1/133615 , G02F1/1323 , G02F1/133526
摘要： A switchable viewing angle display method is provided. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes a top array of selectively enabled extraction pixels, a planar mirror underlying the waveguide pipe, and a bottom array of selectively enabled extraction pixels interposed between the waveguide pipe and the planar mirror. In response to accepting a display viewing angle change command, an extraction pixel is enabled from either the top array or the bottom array, and a waveguide pipe light extraction position is formed, changing the viewing angle.
摘要翻译： 提供了可切换的视角显示方法。 该方法提供了显示像素的前面板阵列。 还提供了显示像素阵列下方的微透镜阵列。 每个微透镜具有焦点，并且每个微透镜与相应的显示像素块相关联。 背光面板具有边缘耦合波导管，其具有连接到发光二极管（LED）列的光学输入。 背光面板包括有选择地启用的提取像素的顶部阵列，位于波导管下面的平面镜，以及置于波导管和平面镜之间的有选择地启用的提取像素的底部阵列。 响应于接受显示视角改变命令，可以从顶部阵列或底部阵列启用提取像素，并且形成波导管光提取位置，改变视角。
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公开(公告)号：US08928567B2
公开(公告)日：2015-01-06
申请号：US13104896
申请日：2011-05-10
CPC分类号： G09G3/342 , G02F1/1323 , G09G3/36 , G09G2320/0626 , G09G2320/068
摘要： A switchable viewing angle display method is provided, using arrayed microlenses and a waveguide pipe with selectable light extraction positions. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes an array extraction pixels, each extraction pixel underlying a corresponding microlens, and the backlight panel also includes a planar mirror underlying the waveguide pipe. In response to a display viewing angle change command, a waveguide pipe's light extraction position is selected, which is the distance between the extraction pixels and their corresponding microlenses, and the display viewing angle is changed.
摘要翻译： 提供可切换的视角显示方法，使用阵列微透镜和具有可选光提取位置的波导管。 该方法提供了显示像素的前面板阵列。 还提供了显示像素阵列下方的微透镜阵列。 每个微透镜具有焦点，并且每个微透镜与相应的显示像素块相关联。 背光面板具有边缘耦合波导管，其具有连接到发光二极管（LED）列的光学输入。 背光面板包括阵列提取像素，每个提取像素位于对应的微透镜下方，并且背光面板还包括位于波导管下方的平面镜。 响应于显示视角改变命令，选择波导管的光提取位置，其是提取像素与其相应的微透镜之间的距离，并且改变显示视角。
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17.发明申请Scattering Tunable Display Using Reflective and Transmissive Modes of Illumination 审中-公开使用反射和透射照明模式散射可调谐显示公开(公告)号：US20120050646A1
公开(公告)日：2012-03-01
申请号：US12877017
申请日：2010-09-07
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/1334 , G02F1/133615 , G02F2001/133626 , G02F2201/58 , G09G3/3473 , G09G3/36 , G09G2300/0456 , G09G2300/046 , G09G2360/144
摘要： A scattering tunable display is provided that uses reflection and edge-lit waveguide transmission modes of illumination. A front panel is provided with an array of selectable display pixels arranged in a plurality of sequences. A backlight panel includes a plurality of edge-coupled waveguide pipes formed in a plurality of rows. Each waveguide pipe has an optical input connected to a corresponding light emitting diode (LED), and an optical output index-matched to a corresponding sequence of display pixels. A display pixel is enabled and ambient visible spectrum illumination is measured. In response to the measured ambient illumination being above a first minimum threshold, the display pixel is operated in a reflective illumination mode. In response to the measured ambient illumination being below the first minimum threshold, the display pixel is operated in a transmissive illumination mode.
摘要翻译： 提供了一种使用反射和边缘照明的波导传输模式的散射可调显示器。 前面板设置有以多个序列排列的可选显示像素阵列。 背光面板包括形成为多行的多个边缘耦合波导管。 每个波导管具有连接到相应的发光二极管（LED）的光学输入和与相应的显示像素序列相匹配的光学输出。 启用显示像素并测量环境可见光谱照明。 响应于所测量的环境照度高于第一最小阈值，显示像素以反射照明模式操作。 响应于所测量的环境照度低于第一最小阈值，显示像素以透射照明模式操作。
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18.发明授权High quantum efficiency silicon nanoparticle embedded SiOXNY luminescence device 失效高量子效率硅纳米颗粒嵌入式SiOXNY发光器件公开(公告)号：US07902088B2
公开(公告)日：2011-03-08
申请号：US12249911
申请日：2008-10-11
IPC分类号： H01L21/31 , H01L21/469 , H01J1/62 , H01J63/04
CPC分类号： C23C16/308 , B82Y20/00 , C23C16/28 , C23C16/505 , H01L31/0352 , H01L31/035236
摘要： A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.
摘要翻译： 提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。 该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。 退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。
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19.发明申请High Quantum Efficiency Silicon Nanoparticle Embedded SiOxNy Luminescence Device 失效高量子硅纳米颗粒嵌入式SiOxNy发光器件公开(公告)号：US20090033207A1
公开(公告)日：2009-02-05
申请号：US12249911
申请日：2008-10-11
CPC分类号： C23C16/308 , B82Y20/00 , C23C16/28 , C23C16/505 , H01L31/0352 , H01L31/035236
摘要： A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.
摘要翻译： 提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。 该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。 退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。
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20.发明申请Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer 有权具有中带隙过渡层的硅纳米晶体嵌入式硅氧化物电致发光器件公开(公告)号：US20080305566A1
公开(公告)日：2008-12-11
申请号：US12197045
申请日：2008-08-22
IPC分类号： H01L21/00
CPC分类号： C23C16/30 , C23C16/24 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608
摘要： A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.
摘要翻译： 提供了一种用于形成具有中间带隙过渡层的硅（Si）纳米晶体嵌入式Si氧化物电致发光（EL）器件的方法。 该方法提供高度掺杂的Si底部电极，并且形成覆盖电极的中带隙电绝缘膜。 在其中X小于2的中间带隙绝缘电介质膜上形成Si纳米晶体嵌入的SiOx膜层，并且透明顶部电极覆盖在Si纳米晶体嵌入的SiOx膜层上。 中间带隙电介质膜的带隙约为Si纳米晶体嵌入的SiOx膜的带隙的一半。 在一个方面，Si纳米晶体嵌入的SiO x膜具有约10电子伏特（eV）的带隙（Eg），并且中带隙绝缘电介质膜具有约5eV的带隙。 通过将高能隧道工艺分成两个较低能量的隧穿步骤，由于大功率热电子引起的潜在损害降低。
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