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    Methods for fabricating a cell string and a non-volatile memory device including the cell string
    15.
    发明授权
    Methods for fabricating a cell string and a non-volatile memory device including the cell string 有权
    制造电池串的方法和包括电池串的非易失性存储装置

    公开(公告)号：US08785276B2

    公开(公告)日：2014-07-22

    申请号：US13198143

    申请日：2011-08-04

    申请人： Toshiro Nakanishi ,  Choong-Man Lee

    发明人： Toshiro Nakanishi ,  Choong-Man Lee

    IPC分类号： H01L21/336 ,  H01L21/4763 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11582

    摘要： A method for fabricating a cell string includes forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, filling the opening with a metal, and annealing the semiconductor pattern having the opening filled with the metal.

    摘要翻译： 一种电池串的制造方法，包括在半导体基板上形成层间电介质层，牺牲层和半导体图案，使得层间绝缘层和牺牲层沿与半导体基板平行的第一方向形成，以及 使得半导体图案在垂直于半导体衬底的第二方向上形成，通过图案化层间电介质层和牺牲层形成开口，用金属填充开口，并且将具有填充有金属的开口的半导体图案退火 。

    METHODS FOR FABRICATING A CELL STRING AND A NON-VOLATILE MEMORY DEVICE INCLUDING THE CELL STRING
    16.
    发明申请
    METHODS FOR FABRICATING A CELL STRING AND A NON-VOLATILE MEMORY DEVICE INCLUDING THE CELL STRING 有权
    用于制造小区字符串的方法和包括小区字符串的非易失性存储器设备

    公开(公告)号：US20120052672A1

    公开(公告)日：2012-03-01

    申请号：US13198143

    申请日：2011-08-04

    申请人： Toshiro Nakanishi ,  Choong-Man Lee

    发明人： Toshiro Nakanishi ,  Choong-Man Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11582

    摘要： A method for fabricating a cell string includes forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, filling the opening with a metal, and annealing the semiconductor pattern having the opening filled with the metal.

    摘要翻译： 一种电池串的制造方法，包括在半导体基板上形成层间电介质层，牺牲层和半导体图案，使得层间绝缘层和牺牲层沿与半导体基板平行的第一方向形成，以及 使得半导体图案在垂直于半导体衬底的第二方向上形成，通过图案化层间电介质层和牺牲层形成开口，用金属填充开口，并且将具有填充有金属的开口的半导体图案退火 。

    Electro-Mechanical Transistor
    17.
    发明申请
    Electro-Mechanical Transistor 有权
    机电晶体管

    公开(公告)号：US20110049650A1

    公开(公告)日：2011-03-03

    申请号：US12549906

    申请日：2009-08-28

    申请人： Sandip Tiwari ,  Moon-Kyung Kim ,  Joshua Mark Rubin ,  Soo-Doo Chae ,  Choong-Man Lee ,  Ravishankar Sundararaman

    发明人： Sandip Tiwari ,  Moon-Kyung Kim ,  Joshua Mark Rubin ,  Soo-Doo Chae ,  Choong-Man Lee ,  Ravishankar Sundararaman

    IPC分类号： H01L29/84

    CPC分类号： H01L49/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00

    摘要： An electromechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.

    摘要翻译： 机电晶体管包括彼此间隔开的源电极和漏电极。 源极柱位于衬底和源电极之间。 漏极柱位于衬底和漏电极之间。 可移动通道与源电极和漏电极间隔开。 门纳米柱位于可移动通道和基板之间。 第一电介质层位于可移动沟道和栅极纳米柱之间。 第二电介质层位于源极柱和源极之间。 第三介电层位于漏极柱和漏极之间。