公开(公告)号：US20060280215A1

公开(公告)日：2006-12-14

申请号：US11505871

申请日：2006-08-18

申请人： Joong-kon Son ,  Tae-hoon Jang ,  Youn-loon Sung ,  Tan Sakong ,  Ho-sun Paek ,  Sung-nam Lee

发明人： Joong-kon Son ,  Tae-hoon Jang ,  Youn-loon Sung ,  Tan Sakong ,  Ho-sun Paek ,  Sung-nam Lee

IPC分类号： H01S5/00 ,  H01S3/097

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3216 ,  H01S5/34333

摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.

公开(公告)号：US20060237709A1

公开(公告)日：2006-10-26

申请号：US11285169

申请日：2005-11-23

申请人： Sung-nam Lee ,  Ho-sun Paek ,  Joong-kon Son ,  Tan Sakong

发明人： Sung-nam Lee ,  Ho-sun Paek ,  Joong-kon Son ,  Tan Sakong

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L29/2003 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/2231 ,  H01S5/34333

摘要： A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1-x-yN substrate (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.

摘要翻译： 提供了具有提高在基板上生长的薄膜的表面特性的结构的基于氮化镓（GaN）的化合物半导体器件。 GaN基化合物半导体器件包括Al衬底（0≤x≤1,0） 相对于（0001）面，其表面朝向预定方向倾斜大于0°且小于1°的角度<= y <= 1和0 <= x + y <= 1），以及 在基板的表面上生长的GaN基化合物半导体层。

公开(公告)号：US08129260B2

公开(公告)日：2012-03-06

申请号：US11802667

申请日：2007-05-24

申请人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

发明人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

IPC分类号： H01L23/58

CPC分类号： H01L21/02647 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02469 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02645

摘要： A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

摘要翻译： 半导体衬底包括第一半导体层和第二半导体层。 第一半导体层由II-VI族半导体材料，III-V族半导体材料或II-VI族半导体材料和III-V族半导体材料形成。 在第一半导体层中形成至少一个非晶区域和至少一个晶体区域。 第二半导体层形成在第一半导体层上并且从至少一个晶体区域晶体生长。 制造半导体衬底的方法包括制备生长衬底; 在生长衬底上晶体生长第一半导体层; 在所述第一半导体层中形成所述至少一个非晶区和所述至少一个晶体区; 以及使用所述至少一个非晶区域作为掩模和所述至少一个晶体区域作为种子在所述第一半导体层上形成第二半导体层。

公开(公告)号：US20080020552A1

公开(公告)日：2008-01-24

申请号：US11802667

申请日：2007-05-24

申请人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

发明人： Ho-sun Paek ,  Youn-joon Sung ,  Kyoung-ho Ha ,  Joong-kon Son ,  Sung-nam Lee

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L31/0256 ,  H01L33/00

CPC分类号： H01L21/02647 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02469 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02645

摘要： A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

摘要翻译： 半导体衬底包括第一半导体层和第二半导体层。 第一半导体层由II-VI族半导体材料，III-V族半导体材料或II-VI族半导体材料和III-V族半导体材料形成。 在第一半导体层中形成至少一个非晶区域和至少一个晶体区域。 第二半导体层形成在第一半导体层上并且从至少一个晶体区域晶体生长。 制造半导体衬底的方法包括制备生长衬底; 在生长衬底上晶体生长第一半导体层; 在所述第一半导体层中形成所述至少一个非晶区和所述至少一个晶体区; 以及使用所述至少一个非晶区域作为掩模和所述至少一个晶体区域作为种子在所述第一半导体层上形成第二半导体层。

公开(公告)号：US06992318B2

公开(公告)日：2006-01-31

申请号：US10877982

申请日：2004-06-29

申请人： Won-seok Lee ,  Kyoung-ho Ha ,  Joon-seop Kwak ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

发明人： Won-seok Lee ,  Kyoung-ho Ha ,  Joon-seop Kwak ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

IPC分类号： H01L33/00 ,  H01L31/0304

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/06 ,  H01L33/32 ,  H01S2301/173

摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

摘要翻译： 提供了具有超晶格半导体层的半导体器件及其制造方法。 半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。 在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。 所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

公开(公告)号：US20050029506A1

公开(公告)日：2005-02-10

申请号：US10877982

申请日：2004-06-29

申请人： Won-seok Lee ,  Kyoung-ho Ha ,  Joon-seop Kwak ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

发明人： Won-seok Lee ,  Kyoung-ho Ha ,  Joon-seop Kwak ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

IPC分类号： H01S5/343 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/20 ,  H01S3/0941 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01L29/06

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/06 ,  H01L33/32 ,  H01S2301/173

摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

摘要翻译： 提供了具有超晶格半导体层的半导体器件及其制造方法。 半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。 在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。 所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

公开(公告)号：US07736925B2

公开(公告)日：2010-06-15

申请号：US11448800

申请日：2006-06-08

申请人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.

摘要翻译： 提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。 该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域， 包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

公开(公告)号：US20070190755A1

公开(公告)日：2007-08-16

申请号：US11650981

申请日：2007-01-09

申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

IPC分类号： H01L21/20

CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

公开(公告)号：US07632742B2

公开(公告)日：2009-12-15

申请号：US11650981

申请日：2007-01-09

申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

IPC分类号： H01L21/20

CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

公开(公告)号：US20070087460A1

公开(公告)日：2007-04-19

申请号：US11448800

申请日：2006-06-08

申请人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.

摘要翻译： 提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。 该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域， 包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。