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    Forming surface features using self-assembling masks
    12.
    发明授权
    Forming surface features using self-assembling masks 有权
    使用自组装掩模形成表面特征

    公开(公告)号：US07828986B2

    公开(公告)日：2010-11-09

    申请号：US11926722

    申请日：2007-10-29

    申请人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    发明人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    IPC分类号： B44C1/22 ,  H01L21/302

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

    摘要： A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.

    摘要翻译： 一个方法。 提供了一种嵌段共聚物和另外的材料的组合。 共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 第一聚合物包括聚苯乙烯，第二聚合物包括聚（环氧乙烷）。 包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。 该组合物直接由第一层的表面形成。 附加材料的纳米结构在第一聚合物嵌段内自组装。 同时蚀刻膜和第一层。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 部分电影被删除。 特征保留在第一层的表面上。

    Orienting, positioning, and forming nanoscale structures
    14.
    发明授权
    Orienting, positioning, and forming nanoscale structures 有权
    定位，定位和形成纳米结构

    公开(公告)号：US07651735B2

    公开(公告)日：2010-01-26

    申请号：US12061777

    申请日：2008-04-03

    申请人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    发明人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    IPC分类号： B05D5/00

    CPC分类号： B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

    摘要： Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided.

    摘要翻译： 方法和结构。 第一嵌段共聚物的第一膜形成在整体设置在基材的能量中性表面层上的槽内。 线形成微区域由第一嵌段共聚物组装，并且在垂直于侧壁并平行于表面层的第一膜内形成第一自组装结构。 至少一个微区域从第一膜移除，使得定向结构保持在垂直于侧壁并平行于表面层的槽中。 在槽内形成第二嵌段共聚物的第二膜。 线形成微区域由第二嵌段共聚物组装，并且在第二膜中形成第二自组装结构，其定向垂直于取向结构并平行于侧壁。 还提供了第二种方法和结构。

    FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS
    15.
    发明申请
    FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS 有权
    使用自组装面膜形成表面特征

    公开(公告)号：US20090107950A1

    公开(公告)日：2009-04-30

    申请号：US11926722

    申请日：2007-10-29

    申请人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    发明人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    IPC分类号： H01B13/00

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

    摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

    摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

    ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES
    16.
    发明申请
    ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES 有权
    定向，定位和形成纳米结构

    公开(公告)号：US20080233343A1

    公开(公告)日：2008-09-25

    申请号：US12061777

    申请日：2008-04-03

    申请人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    发明人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    IPC分类号： B32B5/12 ,  B05D3/00

    CPC分类号： B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

    摘要： Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided.

    摘要翻译： 方法和结构。 第一嵌段共聚物的第一膜形成在整体设置在基材的能量中性表面层上的槽内。 线形成微区域由第一嵌段共聚物组装，并且在垂直于侧壁并平行于表面层的第一膜内形成第一自组装结构。 至少一个微区域从第一膜移除，使得定向结构保持在垂直于侧壁并平行于表面层的槽中。 在槽内形成第二嵌段共聚物的第二膜。 线形成微区域由第二嵌段共聚物组装，并且在第二膜中形成第二自组装结构，其定向垂直于取向结构并平行于侧壁。 还提供了第二种方法和结构。

    Methods of directed self-assembly, and layered structures formed therefrom
    18.
    发明授权
    Methods of directed self-assembly, and layered structures formed therefrom 有权
    定向自组装的方法和由其形成的分层结构

    公开(公告)号：US08623458B2

    公开(公告)日：2014-01-07

    申请号：US12642018

    申请日：2009-12-18

    申请人： Joy Cheng ,  Matthew E. Colburn ,  Stefan Harrer ,  William D. Hinsberg ,  Steven J. Holmes ,  Ho-Cheol Kim ,  Daniel Paul Sanders

    发明人： Joy Cheng ,  Matthew E. Colburn ,  Stefan Harrer ,  William D. Hinsberg ,  Steven J. Holmes ,  Ho-Cheol Kim ,  Daniel Paul Sanders

    IPC分类号： B81C1/00 ,  C08J5/18 ,  C08J5/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.

    摘要翻译： 包括自组装材料的层状结构通过包括形成设置在衬底的第一表面上的光化学，热和/或化学处理的图案化光致抗蚀剂层的方法形成。 经处理的图案化光刻胶层包括非交联处理的光致抗蚀剂。 将取向控制材料浇铸在经处理的图案化的光致抗蚀剂层上，形成包含与基材的第二表面结合的取向控制材料的层。 经处理的光致抗蚀剂和任选的任何未结合的取向控制材料通过显影过程被去除，从而形成用于自组装的预图案。 能够自组装的材料在预制图案上铸造。 允许铸造材料通过任选的加热和/或退火自组装以产生分层结构。

    Methods for forming surface features using self-assembling masks
    19.
    发明授权
    Methods for forming surface features using self-assembling masks 有权
    使用自组装掩模形成表面特征的方法

    公开(公告)号：US08529779B2

    公开(公告)日：2013-09-10

    申请号：US12057565

    申请日：2008-03-28

    申请人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    发明人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    IPC分类号： B31D3/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

    摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

    摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

    Orienting, positioning, and forming nanoscale structures
    20.
    发明授权
    Orienting, positioning, and forming nanoscale structures 有权
    定位，定位和形成纳米结构

    公开(公告)号：US07999160B2

    公开(公告)日：2011-08-16

    申请号：US11690295

    申请日：2007-03-23

    申请人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    发明人： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

    IPC分类号： B05D3/06 ,  B32B3/30 ,  B82B3/00

    CPC分类号： B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

    摘要： A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.

    摘要翻译： 一个方法。 提供第一共聚物。 提供具有能量中性的表面层的基底，其中至少一个槽与其一体地设置有侧壁。 第一共聚物的第一膜涂覆在槽内。 线形成微区由第一共聚物组装，该第一共聚物在垂直于侧壁的第一膜内平行于表面层形成第一自组装结构。 第一和第二聚合物嵌段从第一膜去除，并且取向结构保持在垂直于侧壁并平行于表面层的槽中。 第二共聚物的第二膜涂覆在槽内。 线形成微区由第二共聚物组装，并且在第二膜中形成第二自组装结构，该结构定向成垂直于取向结构并平行于侧壁。 去除第三和第四聚合物嵌段，并保留至少一个第二取向结构。