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    METHOD OF FABRICATING ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF REPAIRING THE SAME
    12.
    发明申请
    METHOD OF FABRICATING ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF REPAIRING THE SAME 有权
    制造有机电致发光器件的阵列基板的方法及其修复方法

    公开(公告)号：US20120064641A1

    公开(公告)日：2012-03-15

    申请号：US13153789

    申请日：2011-06-06

    Applicant: Mi-Youn Yang ,  Jun-Ho Lee ,  Seung-Hyun Cho

    Inventor： Mi-Youn Yang ,  Jun-Ho Lee ,  Seung-Hyun Cho

    IPC: H01L33/00

    CPC classification number: H01L27/1259 ,  H01L27/3244 ,  H01L2251/568

    Abstract: A method of fabricating an organic electroluminescent device (OELD) according to the present invention has steps of repairing a pixel region by irradiating a laser on a drain contact hole of a passivation layer in a pixel region in need of the repair; and disabling the connection between an organic electroluminescent diode and a drain electrode of a driving thin film transistor (TFT), where the pixel region of the OELD has i) the driving TFT comprising the drain electrode, ii) the passivation layer covering the driving TFT, while comprising the drain contact hole exposing the drain electrode of the driving TFT, and iii) the organic electroluminescent diode connected to the drain electrode of the driving TFT via the drain contact hole.

    Abstract translation: 根据本发明的制造有机电致发光器件（OELD）的方法具有通过在需要修复的像素区域中的钝化层的漏极接触孔上照射激光来修复像素区域的步骤; 以及禁止驱动薄膜晶体管（TFT）的有机电致发光二极管和漏电极之间的连接，其中OELD的像素区域具有i）包括漏电极的驱动TFT，ii）覆盖驱动TFT的钝化层 同时包括暴露驱动TFT的漏电极的漏极接触孔，以及iii）经由漏极接触孔连接到驱动TFT的漏电极的有机电致发光二极管。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS
    14.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
    用金属半导体复合源/漏极接触区制造半导体器件的方法

    公开(公告)号：US20100197089A1

    公开(公告)日：2010-08-05

    申请号：US12699491

    申请日：2010-02-03

    Applicant: Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    Inventor： Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    IPC: H01L21/8238

    CPC classification number: H01L21/823814 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/2855 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/665 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.

    Abstract translation: 制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。 在晶体管上形成绝缘层并图案化以暴露源/漏区域。 在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。 在半导体源层上形成金属源层。 进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。 第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。 金属源层可以包括金属层和金属氮化物阻挡层。

    Light absorbent and organic antireflection coating composition containing the same
    16.
    发明申请
    Light absorbent and organic antireflection coating composition containing the same 有权
    含有该吸收剂和有机抗反射涂料的组合物

    公开(公告)号：US20090258321A1

    公开(公告)日：2009-10-15

    申请号：US12157819

    申请日：2008-06-13

    Applicant: Joo-Hyeon Park ,  Ji-Young Kim ,  Jun-Ho Lee

    Inventor： Joo-Hyeon Park ,  Ji-Young Kim ,  Jun-Ho Lee

    IPC: G03F7/004 ,  C07C69/74 ,  C09D5/32 ,  C07D307/77 ,  C07D307/89

    CPC classification number: G03F7/091

    Abstract: The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b), or a compound of formula (2): wherein in the formulas (1a) and (1b), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms; wherein in the formulas (2), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.Furthermore, the organic anti-reflection film composition according to the present invention includes a light absorbent represented by the formula (1a), a polymer, a thermal acid generating agent, a crosslinking agent and a solvent.An anti-reflection film using the compound of the present invention exhibits excellent adhesiveness and storage stability, and excellent resolution in both C/H patterns and L/S patterns. Also, the patterning method of the invention has an excellent process window, and thus excellent pattern profiles can be obtained irrespective of the type of substrate.

    Abstract translation: 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式（1a）的化合物，下式（1b）的化合物，式（1a）和（1b）的化合物的混合物， 或式（2）的化合物：其中在式（1a）和（1b）中，X是选自取代或未取代的具有1至20个碳原子的环状化合物，芳基，二芳基醚， 二芳基硫醚，二芳基亚砜和二芳基酮; R1为氢原子，取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 式（2）中，X为选自具有1至20个碳原子的取代或未取代的环状化合物，芳基，二芳基醚，二芳基硫醚，二芳基亚砜和二芳基酮的化合物; R1为氢原子，取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 此外，本发明的有机抗反射膜组合物包括由式（1a）表示的吸光剂，聚合物，热酸产生剂，交联剂和溶剂。 使用本发明化合物的防反射膜表现出优异的粘合性和储存稳定性，以及C / H图案和L / S图案中的优异的分辨率。 此外，本发明的图案化方法具有优异的工艺窗口，因此可以获得优异的图案图案，而与基板的类型无关。

    DRIVING METHOD OF PLASMA DISPLAY PANEL
    17.
    发明申请
    DRIVING METHOD OF PLASMA DISPLAY PANEL 审中-公开
    等离子显示面板的驱动方法

    公开(公告)号：US20090213105A1

    公开(公告)日：2009-08-27

    申请号：US12391978

    申请日：2009-02-24

    Applicant: Jun-Ho Lee ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Seong-Joon Jeong

    Inventor： Jun-Ho Lee ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Seong-Joon Jeong

    IPC: G09G5/00 ,  G09G3/28

    CPC classification number: G09G3/294 ,  G09G3/2942 ,  G09G2310/066 ,  G09G2320/0233

    Abstract: A driving method for a plasma display panel capable of stabilizing a sustain discharge. The driving method for a plasma display panel according to exemplary embodiments of the present invention includes applying a signal gradually rising to a first voltage to scan electrodes during a first period of a sustain period, and applying a second voltage to sustain electrodes during the first period.

    Abstract translation: 一种能够稳定维持放电的等离子体显示面板的驱动方法。 根据本发明的示例性实施例的等离子体显示面板的驱动方法包括在维持周期的第一周期期间对扫描电极施加逐渐上升的扫描电极的信号，以及在第一周期期间向维持电极施加第二电压 。

    Plasma display device and driving method thereof
    18.
    发明申请
    Plasma display device and driving method thereof 审中-公开
    等离子体显示装置及其驱动方法

    公开(公告)号：US20090135100A1

    公开(公告)日：2009-05-28

    申请号：US12292740

    申请日：2008-11-25

    Applicant: Seung-Min Kim ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Jun-Ho Lee

    Inventor： Seung-Min Kim ,  Woo-Joon Chung ,  Tae-Seong Kim ,  Jun-Ho Lee

    IPC: G09G3/28

    CPC classification number: G09G3/2927 ,  G09G2310/066 ,  G09G2320/0238

    Abstract: A method of driving a frame of plasma display device having a first electrode, a second electrode, and an address electrode, the method including gradually decreasing a voltage of the second electrode from a second voltage to a third voltage and, while decreasing the voltage of the second electrode, supplying a vertical synchronization pulse and applying a first voltage to the first electrode, after the voltage of the second electrode reaches the third voltage, gradually increasing the voltage of the second electrode from a fifth voltage to a sixth voltage while a fourth voltage is applied to the first electrode, and, after the voltage of the second electrode reaches the sixth voltage, gradually decreasing the voltage of the second electrode from an eighth voltage to a ninth voltage while a seventh voltage is applied to the first electrode.

    Abstract translation: 一种驱动具有第一电极，第二电极和寻址电极的等离子体显示装置的框架的方法，所述方法包括将第二电极的电压从第二电压逐渐降低到第三电压，并且同时降低 所述第二电极在所述第二电极的电压达到所述第三电压之后，向所述第一电极提供垂直同步脉冲并施加第一电压，将所述第二电极的电压从第五电压逐渐增加至第六电压， 电压施加到第一电极，并且在第二电极的电压达到第六电压之后，当第七电压被施加到第一电极时，将第二电极的电压从第八电压逐渐降低到第九电压。

    ADHESIVE FILM FOR STACKING SEMICONDUCTOR CHIPS
    20.
    发明申请
    ADHESIVE FILM FOR STACKING SEMICONDUCTOR CHIPS 有权
    用于堆叠半导体芯片的粘合膜

    公开(公告)号：US20080226884A1

    公开(公告)日：2008-09-18

    申请号：US11950470

    申请日：2007-12-05

    Applicant: Chang-Hoon SIM ,  Ki-Jeong Moon ,  Hae-Sang Jun ,  Jun-Ho Lee ,  Yun-Min Park

    Inventor： Chang-Hoon SIM ,  Ki-Jeong Moon ,  Hae-Sang Jun ,  Jun-Ho Lee ,  Yun-Min Park

    IPC: B32B7/02 ,  B32B27/38

    CPC classification number: H01L24/83 ,  C09J7/10 ,  C09J2201/36 ,  C09J2461/00 ,  C09J2463/00 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/29083 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T428/24975 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

    Abstract: The invention concerns an adhesive film for stacking chips which enables chips to be stacked in layers without using a separate spacer usually provided to keep a given distance between wires of an upper chip and a lower chip to have the same area. The adhesive film of the invention has an intermediate adhesive layer of thermoplastic phenoxy resin on both side of which a thermosetting adhesive layer of epoxy resin is placed, respectively, to make a three-layer structure, the thermoplastic phenoxy resin comprising UV curable small molecule compounds. The adhesive film of the invention is a multi-layered adhesive film produced by a method of comprising the steps of achieving compatibility on an interface between the thermosetting epoxy resin and thermoplastic phenoxy resin and then directly forming a phenoxy film of a high elastic modulus through UV curing in an adhesive film. With such a configuration, the adhesive film for stacking semiconductor chips according to the invention enables the semiconductor silicone chips to be stacked in 3 or more layers without using a separate spacer between chips in order to keep a wire distance between upper and lower chips in stacking the chips. With the configuration, it is advantageous that reliability of semiconductors is not lowered because adhesiveness is kept despite of a repeated process of stacking chips subject to high temperature.

    Abstract translation: 本发明涉及一种用于堆叠芯片的粘合膜，其使得芯片能够层叠而不使用通常设置用于保持上芯片和下芯片的导线之间的给定距离的单独间隔件具有相同的面积。 本发明的粘合膜具有热塑性苯氧基树脂的中间粘合剂层，其两侧分别放置环氧树脂的热固性粘合剂层以制成三层结构，所述热塑性苯氧基树脂包含可UV固化的小分子化合物 。 本发明的粘合膜是通过以下方法制造的多层粘合膜，该粘合膜包括以下步骤：在热固性环氧树脂和热塑性苯氧基树脂之间的界面上实现相容性，然后通过UV直接形成具有高弹性模量的苯氧基膜 在粘合膜中固化。 通过这样的结构，根据本发明的用于堆叠半导体芯片的粘合膜能够使半导体硅芯片层叠成3层以上，而不需要在芯片之间使用单独的间隔物，以便在堆叠中保持上下芯片之间的线间距 芯片。 通过该结构，由于尽管重叠堆叠处于高温的芯片的过程，因此保持了粘附性，因此有利的是半导体的可靠性不降低。

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