Light absorbent and organic antireflection coating composition containing the same
    1.
    发明申请
    Light absorbent and organic antireflection coating composition containing the same 有权
    含有该吸收剂和有机抗反射涂料的组合物

    公开(公告)号:US20090258321A1

    公开(公告)日:2009-10-15

    申请号:US12157819

    申请日:2008-06-13

    CPC分类号: G03F7/091

    摘要: The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b), or a compound of formula (2): wherein in the formulas (1a) and (1b), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms; wherein in the formulas (2), X is a compound selected from the group consisting of a substituted or unsubstituted cyclic compound having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.Furthermore, the organic anti-reflection film composition according to the present invention includes a light absorbent represented by the formula (1a), a polymer, a thermal acid generating agent, a crosslinking agent and a solvent.An anti-reflection film using the compound of the present invention exhibits excellent adhesiveness and storage stability, and excellent resolution in both C/H patterns and L/S patterns. Also, the patterning method of the invention has an excellent process window, and thus excellent pattern profiles can be obtained irrespective of the type of substrate.

    摘要翻译: 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式(1a)的化合物,下式(1b)的化合物,式(1a)和(1b)的化合物的混合物, 或式(2)的化合物:其中在式(1a)和(1b)中,X是选自取代或未取代的具有1至20个碳原子的环状化合物,芳基,二芳基醚, 二芳基硫醚,二芳基亚砜和二芳基酮; R1为氢原子,取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 式(2)中,X为选自具有1至20个碳原子的取代或未取代的环状化合物,芳基,二芳基醚,二芳基硫醚,二芳基亚砜和二芳基酮的化合物; R1为氢原子,取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。 此外,本发明的有机抗反射膜组合物包括由式(1a)表示的吸光剂,聚合物,热酸产生剂,交联剂和溶剂。 使用本发明化合物的防反射膜表现出优异的粘合性和储存稳定性,以及C / H图案和L / S图案中的优异的分辨率。 此外,本发明的图案化方法具有优异的工艺窗口,因此可以获得优异的图案图案,而与基板的类型无关。

    Light absorbent and organic antireflection coating composition containing the same
    2.
    发明授权
    Light absorbent and organic antireflection coating composition containing the same 有权
    含有该吸收剂和有机抗反射涂料的组合物

    公开(公告)号:US07939245B2

    公开(公告)日:2011-05-10

    申请号:US12157819

    申请日:2008-06-13

    CPC分类号: G03F7/091

    摘要: The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b): wherein X is selected from the group consisting of a substituted or unsubstituted cyclic group having 1 to 20 carbon atoms, aryl, diaryl ether, diaryl sulfide, diaryl sulfoxide and diaryl ketone; and R1 is a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or an aryl group having 1 to 14 carbon atoms.

    摘要翻译: 本发明涉及一种用于有机抗反射涂层形成的光吸收剂和含有它的有机抗反射膜组合物。 根据本发明的有机抗反射膜形成用吸光剂是下式(1a)的化合物,下式(1b)的化合物,式(1a)和(1b)的化合物的混合物, 其中X选自具有1至20个碳原子的取代或未取代的环状基团,芳基,二芳基醚,二芳基硫醚,二芳基亚砜和二芳基酮; R1为氢原子,取代或未取代的碳原子数1〜10的烷基或碳原子数1〜14的芳基。

    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
    6.
    发明申请
    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
    鎓盐化合物,包含盐化合物的高分子化合物,包含高分子化合物的化学增幅抗蚀剂组合物,以及使用该组合物进行图案化的方法

    公开(公告)号:US20100075256A1

    公开(公告)日:2010-03-25

    申请号:US12321111

    申请日:2009-01-15

    摘要: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring.The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

    摘要翻译: 提供由下式(1)表示的化合物:其中R1表示氢原子,三氟甲基,烷基或烷氧基; A表示由下式(2)或式(3)表示的基团:其中R 2,R 3,R 4,R 5和R 6各自独立地表示取代或未取代的烷基,取代或未取代的烯丙基,取代或未取代的 取代或未取代的苄基或取代或未取代的芳基; R2,R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。 包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。

    Chemically amplified positive photoresist composition
    7.
    发明授权
    Chemically amplified positive photoresist composition 失效
    化学扩增的正性光致抗蚀剂组合物

    公开(公告)号:US06268106B1

    公开(公告)日:2001-07-31

    申请号:US09337434

    申请日:1999-06-21

    IPC分类号: G03F7004

    CPC分类号: G03F7/039 G03F7/0045

    摘要: A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:

    摘要翻译: 化学放大阳性扩增可以形成抗蚀剂图案,其透明度,光敏度和分辨率大大提高,适用于KrF和ArF准分子激光器,使得亚微光刻工艺的精细度可达0.2μm或更小。 该组合物是基于式I的共聚物,以聚苯乙烯换算的重均分子量为3,000至50,000,分子量分布(Mw / Mn)为1.0至2.0,以及低分子量化合物 公式VI:

    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
    9.
    发明授权
    Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition 有权
    鎓盐化合物,包含盐化合物的高分子化合物,包含高分子化合物的化学增幅抗蚀剂组合物,以及使用该组合物进行图案化的方法

    公开(公告)号:US08158327B2

    公开(公告)日:2012-04-17

    申请号:US12321111

    申请日:2009-01-15

    IPC分类号: G03F7/004 G03F7/30 C08F228/02

    摘要: A compound represented by the following formula (1) is provided: wherein R1 represents a hydrogen atom, a trifluoromethyl group, an alkyl group, or an alkoxy group; and A represents a group represented by the following formula (2) or formula (3): wherein R2, R3, R4, R5 and R6 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted allyl group, a substituted or unsubstituted perfluoroalkyl group, a substituted or unsubstituted benzyl group, or a substituted or unsubstituted aryl group; and two or more of R2, R3 and R4 may be linked to each other to form a saturated or unsaturated carbon ring or a saturated or unsaturated heterocyclic ring. The chemically amplified resist composition comprising a polymer compound which is produced from the compound of formula 1 according to the present invention provides a chemically amplified resist sensitive to far-ultraviolet radiation, which is represented by KrF excimer laser or ArF excimer laser.

    摘要翻译: 提供由下式(1)表示的化合物:其中R1表示氢原子,三氟甲基,烷基或烷氧基; A表示由下式(2)或式(3)表示的基团:其中R 2,R 3,R 4,R 5和R 6各自独立地表示取代或未取代的烷基,取代或未取代的烯丙基,取代或未取代的 取代或未取代的苄基或取代或未取代的芳基; R2,R3和R4中的两个或多个可以彼此连接形成饱和或不饱和的碳环或饱和或不饱和的杂环。 包含由根据本发明的式1化合物制备的高分子化合物的化学放大抗蚀剂组合物提供对由KrF准分子激光器或ArF准分子激光器表示的远紫外辐射敏感的化学放大抗蚀剂。