公开(公告)号：US5885361A

公开(公告)日：1999-03-23

申请号：US434715

申请日：1995-05-04

申请人： Jun Kikuchi ,  Shuzo Fujimura

发明人： Jun Kikuchi ,  Shuzo Fujimura

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31

CPC分类号： B08B7/0035

摘要： A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

摘要翻译： 一种清洗氢等离子体下游装置的方法，用于通过在等离子体产生空间中产生的氢等离子体的下游通过其内部主要部分的气体流路引导到材料上来处理处理室中的材料 的石英，其中在等离子体产生空间中产生含有氢气，优选含有氢和水蒸汽的气体的等离子体，在等离子体的下游位置加入氟化氮，等离子体的下游被引导 到处理室以清洁气体流动路径。 可以通过金属鞘热电偶监测氢自由基的量。 可以有效地清洁适合于去除硅表面上的自然氧化膜或抗蚀剂膜的氢等离子体下游装置，而无需拆卸它。

公开(公告)号：US5773316A

公开(公告)日：1998-06-30

申请号：US401689

申请日：1995-03-10

申请人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

发明人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

IPC分类号： G01K11/00 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01K11/00 ,  B24B37/013 ,  H01L22/26 ,  H01L22/12

摘要： Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.

摘要翻译： 将脉冲激光束施加到被测量物体上。 使用脉冲激光束的第一激光束，其具有在脉冲激光束的上升之后立即振荡的第一波长，以及其后具有振荡的第二波长的第二激光束。 基于第一激光束的反射光的第一干涉光的强度或其透射光与第二激光的反射光的强度或其透射光之间的差异，被测量物体的温度以及是否 温度上升或下降。 该方法和装置可以通过简单的结构实现，并可以测量物理量变化的方向。

公开(公告)号：US5364519A

公开(公告)日：1994-11-15

申请号：US54609

申请日：1993-04-30

申请人： Shuzo Fujimura ,  Toshimasa Kisa ,  Yasunari Motoki

发明人： Shuzo Fujimura ,  Toshimasa Kisa ,  Yasunari Motoki

IPC分类号： H01J37/32 ,  C23C16/50 ,  H01L21/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.

摘要翻译： 一种用于制造集成电路（IC）或类似半导体器件的微波等离子体处理工艺和装置，其中待处理对象或诸如半导体晶片的材料使用通过微波透射窗口传输的微波产生的等离子体进行处理 垂直于波导中的逐行微波的电场设置。

公开(公告)号：US4980022A

公开(公告)日：1990-12-25

申请号：US488556

申请日：1990-03-05

申请人： Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.

公开(公告)号：US4609428A

公开(公告)日：1986-09-02

申请号：US756233

申请日：1985-07-18

申请人： Shuzo Fujimura

发明人： Shuzo Fujimura

IPC分类号： H01L21/302 ,  H01J37/305 ,  H01J37/32 ,  H01L21/145 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32623 ,  H01J37/3053 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678

摘要： A microwave plasma etching method and apparatus for performing substantially anisotropic etching to form micropatterns on IC substrates. A microwave power source creates a plasma from a gas with a relatively low pressure such as 10.sup.-3 to 10.sup.-4 Torr, so that the mean free path of the gas molecules exceeds the dimensions of the etching apparatus. A magnetic field is generated in a plasma generating chamber, a reaction chamber where in the substrate is mounted and a connecting chamber. The plasma discharge is enhanced by a cyclotron resonance magnetic field intensity corresponding to the frequency of the microwave power applied to the plasma chamber. The magnetic field creates a magnetic mirror which prevents the electrons in the plasma from entering into the reaction chamber so as to eliminate the generation of free radicals in which the reaction chamber which adversely affect the anisotropic etching ability.

摘要翻译： 微波等离子体蚀刻方法和装置，用于进行基本上各向异性的蚀刻以在IC基板上形成微图案。 微波功率源由具有相对较低压力（例如10-3至10-4乇）的气体产生等离子体，使得气体分子的平均自由程超过蚀刻设备的尺寸。 在等离子体发生室，安装基板的反应室和连接室中产生磁场。 通过与施加到等离子体室的微波功率的频率对应的回旋共振磁场强度来增强等离子体放电。 磁场产生磁反射镜，防止等离子体中的电子进入反应室，以消除反应室产生不利影响各向异性蚀刻能力的自由基。

公开(公告)号：US4393807A

公开(公告)日：1983-07-19

申请号：US187515

申请日：1980-09-15

申请人： Shuzo Fujimura ,  Atsuyuki Yasuda

发明人： Shuzo Fujimura ,  Atsuyuki Yasuda

IPC分类号： B05C11/08 ,  G03F7/16 ,  H01L21/027 ,  B05C5/00

CPC分类号： G03F7/162

摘要： A spinner comprises a rotating spindle for causing a workpiece to spin at a high speed, and a cup disposed around the spindle and provided at a bottom wall thereof with a port for air evacuation. The cup comprises a deflector ring disposed in the interior of the cup and extending inwardly, the deflector ring having an annular barrier at the inner peripheral edge for defining steps projecting from the upper and lower surfaces of the ring, respectively, and the barrier having an inner peripheral surface formed to diverge at least upwardly with respect to the axis of the spindle.

摘要翻译： 旋转器包括用于使工件高速旋转的旋转主轴和设置在心轴周围的杯，并在其底壁处设置有用于排气的端口。 杯子包括设置在杯子内部并向内延伸的偏转器环，偏转器环在内周边缘处具有环形阻挡件，用于限定从环的上表面和下表面突出的台阶，并且屏障具有 内周面形成为相对于心轴的轴线至少向上发散。

公开(公告)号：US06551939B2

公开(公告)日：2003-04-22

申请号：US09268203

申请日：1999-03-15

申请人： Toshi Takamatsu ,  Shuzo Fujimura

发明人： Toshi Takamatsu ,  Shuzo Fujimura

IPC分类号： H01L21302

CPC分类号： H01L21/02046 ,  G03F7/427 ,  H01L21/31116

摘要： The present invention provides a method for treating a surface of an object using, for example, a downstream region of a plasma source. The method includes a step of generating a plasma from a gas-C in a plasma source, where the gas-C includes a gas-A and a gas-B. Gas-A is selected from a compound comprising at least a nitrogen bearing compound or an other gas. The other gas is selected from a mixture of an element in group 18 classified in the atomic periodic table. Gas-B includes at least a NH3 bearing compound. The method also includes a step of injecting a gas-D downstream of the plasma source of the gas-C. The method also includes a step of setting an object (having a surface) downstream of the gas-D injection and downstream of the plasma source. A step of processing the surface of the object by a mixture species generated from the gas-C in the plasma and the gas-D is included. The NH3 bearing compound in the gas-C includes a NH3 bearing concentration that is lower than an explosion limit of NH3, which is safer than conventional techniques.

摘要翻译： 本发明提供使用例如等离子体源的下游区域处理物体的表面的方法。 该方法包括从等离子体源中的气体C产生等离子体的步骤，其中气体-C包括气体-A和气体B。 气体-A选自包含至少含氮化合物或其它气体的化合物。 其他气体选自分类在原子周期表中的组18中的元素的混合物。 气体-B至少包含含NH 3的化合物。 该方法还包括在气体C的等离子体源的下游注入气体-D的步骤。 该方法还包括将气体-D注入下游的物体（具有表面）设置在等离子体源的下游的步骤。 包括通过由等离子体中的气体-C产生的混合物和气体-D来处理物体的表面的步骤。 气体C中的含NH 3的化合物包括NH3的浓度低于NH3的爆炸极限，比常规技术更安全。

公开(公告)号：US4512868A

公开(公告)日：1985-04-23

申请号：US628863

申请日：1984-07-09

申请人： Shuzo Fujimura ,  Hiroshi Yano

发明人： Shuzo Fujimura ,  Hiroshi Yano

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C15/00

CPC分类号： H01L21/3065 ,  H01J37/32357

摘要： A microwave plasma processing apparatus for dry etching or ashing in a fabricating process for an integrated circuit semiconductor device is improved to provide a higher processing rate. The apparatus comprises a plasma generating region formed in a part of a waveguide through which microwave power is transmitted. A reactive gas is introduced into the plasma generating region and a plasma is generated by the microwave power applied thereto. A reacting region is coupled to the plasma generating region through a shielding member, wherein radicals of the reactive gas generated in the plasma enter the reacting region through the shielding member. The plasma generating region, the reacting region and an evacuating device comprise a vacuum system and establish a fixed gas pressure for the reactive gas. The radicals (active species) react with an object placed in the reacting region, forming volatile compounds which are removed by the evacuating device. The plasma is confined in the plasma generating region by the shielding means, thereby preventing damage of the object due to the plasma.

摘要翻译： 在集成电路半导体器件的制造工艺中用于干蚀刻或灰化的微波等离子体处理设备被改进以提供更高的处理速率。 该装置包括形成在波导的一部分中的等离子体产生区域，微波功率通过该波导发射。 反应气体被引入到等离子体产生区域中，并且通过施加到其上的微波功率产生等离子体。 反应区域通过屏蔽构件耦合到等离子体产生区域，其中在等离子体中产生的反应气体的自由基通过屏蔽构件进入反应区域。 等离子体产生区域，反应区域和排气装置包括真空系统并建立用于反应气体的固定气体压力。 基团（活性物质）与放置在反应区域中的物体反应，形成由抽空装置除去的挥发性化合物。 通过屏蔽装置将等离子体限制在等离子体产生区域中，从而防止由于等离子体而造成的物体损坏。

公开(公告)号：US06579465B1

公开(公告)日：2003-06-17

申请号：US09668126

申请日：2000-09-21

申请人： Toshiyuki Takamatsu ,  Shuzo Fujimura

发明人： Toshiyuki Takamatsu ,  Shuzo Fujimura

IPC分类号： B44C122

CPC分类号： H01J37/32357 ,  H01L21/31116

摘要： A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H2O bearing compound or is preferably H2O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H2O bearing compound in Gas-C includes a H2O bearing compound that is lower in concentration than a Gas-A concentration.

摘要翻译： 使用含氢化合物处理物体的表面的方法。 该方法包括从等离子体源中的气体-C产生等离子体的步骤，其中气体-C至少包括气体A和气体-B。 气体-A选自包括至少含氮化合物（例如N 2）或其它气体的化合物，例如分类为原子周期表的第18组元素中的气体。 气体-B至少具有含H 2 O的化合物或者优选H 2 O. 该方法还包括将气体C的等离子体源下游的气体-D注入气体D注入和下游等离子体源的步骤。 物体有待处理的表面。 该方法还包括通过等离子体中的气体-C和Gas-D产生的混合物来处理所述物体的表面的步骤。 Gas-C中含H 2 O的化合物包括浓度低于Gas-A浓度的含H2O的化合物。

公开(公告)号：US06168310A

公开(公告)日：2001-01-02

申请号：US09039994

申请日：1998-03-17

申请人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

发明人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

IPC分类号： G01K1100

CPC分类号： G01K11/00 ,  B24B37/013 ,  H01L22/12 ,  H01L22/26

摘要： Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.

摘要翻译： 将脉冲激光束施加到被测量物体上。 使用脉冲激光束的第一激光束，其具有在脉冲激光束的上升之后立即振荡的第一波长，以及其后具有振荡的第二波长的第二激光束。 基于第一激光束的反射光的第一干涉光的强度或其透射光与第二激光束的反射光强度或其透射光之间的差异，被测量物体的温度以及是否 温度上升或下降。 该方法和装置可以通过简单的结构实现，并可以测量物理量变化的方向。