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    X-Ray Metrology System With Broadband Laser Produced Plasma Illuminator
    12.
    发明申请
    X-Ray Metrology System With Broadband Laser Produced Plasma Illuminator 审中-公开

    公开(公告)号：US20190215940A1

    公开(公告)日：2019-07-11

    申请号：US15867633

    申请日：2018-01-10

    Applicant: KLA-Tencor Corporation

    Inventor： Oleg Khodykin ,  Alexander Bykanov

    IPC: H05G2/00 ,  G01N23/201

    CPC classification number: H05G2/008 ,  G01N23/201 ,  G01N23/207 ,  G01N2223/054 ,  G01N2223/1016

    Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

    Systems And Methods For Combined X-Ray Reflectometry And Photoelectron Spectroscopy
    13.
    发明申请
    Systems And Methods For Combined X-Ray Reflectometry And Photoelectron Spectroscopy 审中-公开

    公开(公告)号：US20190212281A1

    公开(公告)日：2019-07-11

    申请号：US16230489

    申请日：2018-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Oleg Khodykin

    IPC: G01N23/223 ,  G02B27/09 ,  H05G1/30 ,  G01N23/083 ,  G01N23/207

    CPC classification number: G01N23/223 ,  G01N23/083 ,  G01N23/2076 ,  G02B27/0977 ,  H05G1/30

    Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

    Plasma based light source having a target material coated on a cylindrically-symmetric element
    14.
    发明授权
    Plasma based light source having a target material coated on a cylindrically-symmetric element 有权

    公开(公告)号：US09918375B2

    公开(公告)日：2018-03-13

    申请号：US15268793

    申请日：2016-09-19

    Applicant: KLA-Tencor Corporation

    Inventor： Alexey Kuritsyn ,  Ye Liu ,  Oleg Khodykin

    IPC: H05G2/00 ,  G03F7/20 ,  G02F1/03

    CPC classification number: H05G2/008 ,  G02F1/0327 ,  G02F2203/26

    Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as Xenon, that is coated on the outer surface of a cylindrically-symmetric element (e.g., drum). Embodiments include a pre-pulsing arrangement which can be optimized to reduce irradiation damage to the drum and a pulse trimming unit which can be employed to reduce irradiation damage to the drum. In addition, an embodiment is disclosed wherein the surface of a cylindrically-symmetric element is formed with a plurality of grooves having a groove depth greater than 1 mm and a focusing unit focusing a laser beam and establishing an irradiation site to produce plasma from the target material, with the irradiation site distanced from a groove surface portion to protect the surface portion from irradiation damage.

    EUV LIGHT SOURCE USING CRYOGENIC DROPLET TARGETS IN MASK INSPECTION
    16.
    发明申请
    EUV LIGHT SOURCE USING CRYOGENIC DROPLET TARGETS IN MASK INSPECTION 有权
    EUV光源在面板检测中使用低温滴定靶

    公开(公告)号：US20140246607A1

    公开(公告)日：2014-09-04

    申请号：US14180107

    申请日：2014-02-13

    Applicant: KLA-Tencor Corporation

    Inventor： Alexander Bykanov ,  Oleg Khodykin ,  Daniel Christopher Wack

    IPC: H05G2/00

    CPC classification number: H05G2/006 ,  G03F1/22 ,  G03F1/84 ,  G03F7/20 ,  G03F7/70033 ,  H01L21/027 ,  H05G2/008 ,  Y10T137/206

    Abstract: An apparatus for generating extreme ultra-violet (EUV) light for use in a lithography inspection tool, comprising a drive laser arranged to produce a laser pulse, a vacuum chamber, a set of focusing optics arranged to focus the laser pulse produced by the drive laser onto a target spot within the vacuum chamber with a beam target diameter of less than 100 μm, a target material generator arranged to deliver an amount of a target material to the target spot within the vacuum chamber, and a set of collector optics arranged to focus a quantity of EUV light generated when the amount of the target material is exposed to the laser pulse at the target spot onto an intermediate focus spot.

    Abstract translation: 一种用于产生用于光刻检查工具的极紫外（EUV）光的装置，包括布置成产生激光脉冲的驱动激光器，真空室，一组聚焦光学元件，其被布置成聚焦由驱动器产生的激光脉冲 激光到靶室直径小于100μm的真空室内的目标点上，目标材料发生器布置成将一定量的目标材料输送到真空室内的目标点，以及一组集光器，其被布置成 将当目标材料的量暴露于目标点处的激光脉冲的量的EUV光聚焦到中间焦点上。

    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
    17.
    发明授权
    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction 有权

    公开(公告)号：US11333621B2

    公开(公告)日：2022-05-17

    申请号：US16030849

    申请日：2018-07-09

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

    IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/67 ,  H01L21/66

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

    Systems and methods for combined x-ray reflectometry and photoelectron spectroscopy
    18.
    发明授权
    Systems and methods for combined x-ray reflectometry and photoelectron spectroscopy 有权

    公开(公告)号：US10895541B2

    公开(公告)日：2021-01-19

    申请号：US16230489

    申请日：2018-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Oleg Khodykin

    IPC: G01N23/223 ,  G01N23/2273 ,  G01N23/083 ,  G01N23/207 ,  G02B27/09 ,  H05G1/30

    Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

    Laser Produced Plasma Light Source Having a Target Material Coated on a Cylindrically-Symmetric Element
    20.
    发明申请
    Laser Produced Plasma Light Source Having a Target Material Coated on a Cylindrically-Symmetric Element 审中-公开

    公开(公告)号：US20190075641A1

    公开(公告)日：2019-03-07

    申请号：US16030693

    申请日：2018-07-09

    Applicant: KLA-Tencor Corporation

    Inventor： Alexey Kuritsyn ,  Brian Ahr ,  Rudy F. Garcia ,  Frank Chilese ,  Oleg Khodykin

    IPC: H05G2/00

    Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as Xenon, that is coated on the outer surface of a drum. Embodiments include bearing systems for rotating the drum that have structures for reducing leakage of contaminant material and/or bearing gas into the LPP chamber. Injection systems are disclosed for coating and replenishing target material on the drum. Wiper systems are disclosed for preparing the target material surface on the drum, e.g. smoothing the target material surface. Systems for cooling and maintaining the temperature of the drum and a housing overlying the drum are also disclosed.

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