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    Apparatus and methods for determining defect depths in vertical stack memory
    2.
    发明授权
    Apparatus and methods for determining defect depths in vertical stack memory 有权

    公开(公告)号：US09696264B2

    公开(公告)日：2017-07-04

    申请号：US14226745

    申请日：2014-03-26

    Applicant: KLA-Tencor Corporation

    Inventor： Steven R. Lange ,  Robert M. Danen ,  Stefano Palomba

    IPC: G01N21/88 ,  G01N21/95 ,  G01N21/17

    CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N2021/1785

    Abstract: Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

    INSPECTION SYSTEMS AND TECHNIQUES WITH ENHANCED DETECTION
    4.
    发明申请
    INSPECTION SYSTEMS AND TECHNIQUES WITH ENHANCED DETECTION 审中-公开

    公开(公告)号：US20170176346A1

    公开(公告)日：2017-06-22

    申请号：US15451990

    申请日：2017-03-07

    Applicant: KLA-Tencor Corporation

    Inventor： Steven R. Lange

    IPC: G01N21/95 ,  G03F7/20 ,  G01N21/88

    CPC classification number: G01N21/9505 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8845 ,  G01N2021/8848 ,  G03F7/70633 ,  G03F7/7065

    Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

    APPARATUS AND METHODS FOR DETERMINING DEFECT DEPTHS IN VERTICAL STACK MEMORY
    5.
    发明申请
    APPARATUS AND METHODS FOR DETERMINING DEFECT DEPTHS IN VERTICAL STACK MEMORY 有权
    用于确定垂直存储器中缺陷深度的装置和方法

    公开(公告)号：US20140300890A1

    公开(公告)日：2014-10-09

    申请号：US14226745

    申请日：2014-03-26

    Applicant: KLA-Tencor Corporation

    Inventor： Steven R. Lange ,  Robert M. Danen ,  Stefano Palomba

    IPC: G01N21/95

    CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N2021/1785

    Abstract: Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

    Abstract translation: 公开了用于检查多层的垂直半导体堆叠的方法和装置。 该方法包括（a）在共焦工具上，在第一垂直堆叠的多个不同深度的多个聚焦平面处重复聚焦照明光束，其中，缺陷位于不同深度的未知光和照明 光束具有约700nm至约950nm的波长范围，（b）基于在不同深度处从第一垂直堆叠检测到的聚焦输出光产生用于不同深度的多个对焦图像，其中， 聚焦输出光被抑制到达共焦系统的检测器并被抑制以有助于生成对焦图像，以及（c）确定缺陷位于第一垂直堆叠中的不同深度中的哪一个 基于对焦图像。

    Inspection systems and techniques with enhanced detection
    6.
    发明授权
    Inspection systems and techniques with enhanced detection 有权

    公开(公告)号：US10126251B2

    公开(公告)日：2018-11-13

    申请号：US15451990

    申请日：2017-03-07

    Applicant: KLA—Tencor Corporation

    Inventor： Steven R. Lange

    IPC: G01N21/95 ,  G01N21/88 ,  G01N21/956 ,  G03F7/20

    Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

    APPARATUS AND METHODS FOR DETECTING DEFECTS IN VERTICAL MEMORY
    8.
    发明申请
    APPARATUS AND METHODS FOR DETECTING DEFECTS IN VERTICAL MEMORY 有权
    用于检测垂直存储器中缺陷的装置和方法

    公开(公告)号：US20150260660A1

    公开(公告)日：2015-09-17

    申请号：US14728938

    申请日：2015-06-02

    Applicant: KLA-Tencor Corporation

    Inventor： Steven R. Lange

    IPC: G01N21/95 ,  G01N21/88

    CPC classification number: G01N21/9505 ,  G01N21/21 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8845 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/08

    Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface, as well as to detect defects only on the surface.

    Abstract translation: 公开了用于检查垂直存储器堆叠的方法和装置。 在检查工具上，使用具有第一波长范围的入射光来检测垂直存储堆的表面上的缺陷。 在检查工具上，具有第二波长范围的入射光用于检测垂直存储器堆叠的表面和深度上的缺陷。 将使用第一和第二波长范围检测到的缺陷进行比较，仅在垂直存储器堆叠的整个深度处检测缺陷，排除表面上的缺陷，以及仅在表面上检测缺陷。

    Multi-Spectral Defect Inspection for 3D Wafers
    9.
    发明申请
    Multi-Spectral Defect Inspection for 3D Wafers 有权
    3D晶片的多光谱缺陷检测

    公开(公告)号：US20140139822A1

    公开(公告)日：2014-05-22

    申请号：US13742315

    申请日：2013-01-15

    Applicant: KLA-Tencor Corporation

    Inventor： Steven R. Lange

    IPC: G01N21/25 ,  G01N21/21

    CPC classification number: G01N21/9501 ,  G01N21/3563 ,  G01N21/359 ,  G01N21/55 ,  G01N21/9503 ,  G01N2201/0612 ,  G01N2201/105

    Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

    Abstract translation: 提供了三维晶圆的多光谱缺陷检测。 被配置为检测在晶片上形成的一个或多个结构中的缺陷的一个系统包括被配置为将离散光谱带中的光引导到在晶片上形成的一个或多个结构的照明子系统。 至少一些离散的光谱带处于近红外（NIR）波长范围。 每个离散的光谱带具有小于100nm的带通。 该系统还包括检测子系统，该检测子系统被配置为响应于从一个或多个结构反映的离散频谱带中的光产生输出。 另外，该系统包括被配置为使用输出来检测晶片上的一个或多个结构中的缺陷的计算机子系统。

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